AS4C256M16D3LC-12BIN - 4Gb DDR3L SDRAM 96-FBGA | Alliance Memory
Артикул: AS4C256M16D3LC-12BIN ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $54.4 | $54,40 |
| 10 | $52 | $520,00 |
| 100 | $48.5 | $4.850,00 |
| 500 | $45 | $22.500,00 |
| 1.000 | $42 | $42.000,00 |
AS4C256M16D3LC-12BIN Обзор
DDR3L SDRAM is a type of dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by about 20% while maintaining similar performance. It is part of the DDR3 family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in embedded systems, networking equipment, and industrial applications where power efficiency and reliability are critical.
Key features include an 8-bank architecture, programmable CAS latency, burst lengths of 8 and 4, on-die termination (ODT), and a 20ns row cycle time. The device supports auto-refresh and self-refresh modes, and includes a temperature sensor for thermal management. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
Technically, the AS4C256M16D3LC-12BIN uses a high-speed CMOS process and features a 16-bit data bus, achieving data rates up to 1600 Mbps per pin. It operates from a single 1.35V supply, with an I/O voltage of 1.35V, and is compatible with JEDEC DDR3L standards. The device includes programmable read and write latencies, and supports DLL (Delay-Locked Loop) for precise timing.
Typical applications include embedded computing, industrial PCs, networking routers, and automotive infotainment systems. Its low voltage and industrial temperature range make it ideal for harsh environments. The device is also suitable for high-reliability systems requiring long-term availability.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and careful termination of the data and address lines.
Аналоги без доработки для AS4C256M16D3LC-12BIN — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с AS4C256M16D3LC-12BIN (тот же форм-фактор и посадочное место) — отличается по Access Time, CAS Latency, Memory Size, Package, Memory Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
AS4C256M16D3LC-12BAN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AS4C256M16D3L-12BINTR
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AS4C256M16D3C-12BIN
⚡ Тот же корпус📋 Справочный аналог (нет в каталоге)
AS4C256M16D3B-12BCN
⚡ Тот же корпус📋 Справочный аналог (нет в каталоге)
MT41K256M16HA-125
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.3636 / шт.
Открыть даташит →IS43TR16512B-125KBLI
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
AS4C256M16D3LC-12BIN Максимальные параметры и электрические характеристики
| Тип памяти | SDRAM - DDR3L |
| Размер памяти | 4 Gbit |
| Организация памяти | 256M x 16 |
| Разрядность шины данных | 16 bit |
| Напряжение питания | 1.35 V |
| Максимальная тактовая частота | 800 MHz |
| Access Time | 20 ns |
| Корпус / Типоразмер | 96-FBGA (7.5x13.5) |
| Способ монтажа | SMD/SMT |
| Диапазон рабочих температур | -40°C to +95°C |
| Number of Banks | 8 |
| Задержка CAS | 11, 12, 13 |
| Burst Length | 8, 4 |
| RoHS | Compliant |
| Product Category | DRAM |
Конфигурация выводов AS4C256M16D3LC-12BIN
| Контакт A1 | VDD — Power supply (1.35V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт A5 | DQ2 — Data input/output 2 |
| Контакт A6 | DQ3 — Data input/output 3 |
| Контакт A7 | VDD — Power supply (1.35V) |
| Контакт A8 | DQ4 — Data input/output 4 |
| Контакт A9 | DQ5 — Data input/output 5 |
| Контакт A10 | VSS — Ground |
| Контакт A11 | DQ6 — Data input/output 6 |
| Контакт A12 | DQ7 — Data input/output 7 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ8 — Data input/output 8 |
| Контакт B3 | DQ9 — Data input/output 9 |
| Контакт B4 | VDD — Power supply (1.35V) |
| Контакт B5 | DQ10 — Data input/output 10 |
| Контакт B6 | DQ11 — Data input/output 11 |
| Контакт B7 | VSS — Ground |
| Контакт B8 | DQ12 — Data input/output 12 |
| Контакт B9 | DQ13 — Data input/output 13 |
| Контакт B10 | VDD — Power supply (1.35V) |
| Контакт B11 | DQ14 — Data input/output 14 |
| Контакт B12 | DQ15 — Data input/output 15 |
Типичное применение
AS4C256M16D3LC-12BIN подходит для 6 применениеs: Embedded Computing, Networking Equipment, Industrial Automation, Automotive Infotainment, Medical Devices, Test and Measurement.
Embedded Computing
The AS4C256M16D3LC-12BIN provides high-density, low-power memory for embedded processors and FPGAs. Its 4Gb capacity and 16-bit bus support complex applications like real-time data processing and multitasking. The 1.35V operation reduces power consumption, extending battery life in portable systems. The industrial temperature range ensures reliable operation in harsh environments. With a 800 MHz clock, it delivers high bandwidth for demanding workloads. This memory is ideal for single-board computers, industrial PCs, and IoT gateways.
Рекомендуется
Networking Equipment
In networking routers and switches, the AS4C256M16D3LC-12BIN offers high-speed data buffering and packet processing. Its 800 MHz clock and 16-bit bus enable fast data throughput, while the 1.35V supply minimizes heat generation in dense equipment. The 96-FBGA package saves PCB space, allowing compact designs. The industrial temperature range supports outdoor and telecom installations. This memory is suitable for network processors, switches, and firewalls requiring reliable, high-performance memory.
Рекомендуется
Industrial Automation
The AS4C256M16D3LC-12BIN is designed for industrial control systems, PLCs, and robotics. Its wide temperature range (-40°C to +95°C) ensures operation in factory floors and outdoor environments. The low 1.35V voltage reduces power dissipation, improving system reliability. The 4Gb density provides ample storage for control algorithms and data logging. The 96-FBGA package is robust for vibration-prone environments. This memory supports real-time processing and high-speed data acquisition in automation systems.
Рекомендуется
Automotive Infotainment
In automotive infotainment systems, the AS4C256M16D3LC-12BIN provides high-bandwidth memory for navigation, multimedia, and connectivity features. Its 1.35V operation reduces power consumption, important for vehicle battery life. The industrial temperature range covers automotive cabin environments. The 4Gb capacity supports complex user interfaces and real-time data processing. The 96-FBGA package is compact for space-limited head units. This memory is suitable for car radios, telematics, and advanced driver assistance systems (ADAS) requiring reliable memory.
Рекомендуется
Medical Devices
The AS4C256M16D3LC-12BIN is suitable for medical imaging, patient monitoring, and diagnostic equipment. Its low power consumption is critical for battery-operated devices. The industrial temperature range ensures reliable operation in clinical environments. The high density supports large data buffers for image processing. The 800 MHz clock provides fast data transfer for real-time monitoring. The 96-FBGA package is ideal for compact medical devices. This memory meets the reliability requirements of medical electronics.
Рекомендуется
Test and Measurement
In test and measurement equipment, the AS4C256M16D3LC-12BIN provides high-speed data acquisition and storage. Its 800 MHz clock enables fast sampling rates, while the 4Gb capacity stores large waveforms. The 1.35V supply reduces heat in benchtop instruments. The industrial temperature range supports lab and field use. The 96-FBGA package is suitable for compact oscilloscopes and analyzers. This memory is ideal for oscilloscopes, logic analyzers, and data loggers requiring high-bandwidth memory.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для AS4C256M16D3LC-12BIN — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | AS4C256M16D3LC-12BAN | AS4C256M16D3L-12BINTR | AS4C256M16D3C-12BIN | MT41K256M16HA-125 |
|---|---|---|---|---|---|
| Package | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) | 96-FBGA (7.5x13.5) |
| Brand | Alliance Memory | Alliance Memory | Alliance Memory | Alliance Memory | Micron Technology |
| Memory Type | DDR3L | DDR3L | DDR3L | DDR3 | DDR3L |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.5V | 1.35V |
| Clock Frequency | 800 MHz | 800 MHz | 800 MHz | 800 MHz | 800 MHz |
| Operating Temperature | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Industrial temperature range (против MT41K256M16HA-125)
- Low voltage operation (против AS4C256M16D3C-12BIN)
- Drop-in replacement availability (против AS4C256M16D3LC-12BAN)
Заметки по проектированию
Place 0.1uF decoupling capacitors close to each VDD and VDDQ pin, and a 10uF bulk capacitor near the power entry. Follow the layout guidelines in the Alliance Memory datasheet to minimize trace lengths and ensure signal integrity for high-speed DDR3L signals.
The AS4C256M16D3LC-12BIN operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 1.35V supply reduces power dissipation, but thermal vias under the FBGA package can help conduct heat away from the device.
For DDR3L-1600 operation, maintain controlled impedance of 40-50 ohms for data and address lines. Use series termination resistors (22-33 ohms) near the driver to reduce reflections. Keep the clock and strobe pairs tightly coupled and length-matched to minimize skew.
Информация о соответствии
RoHS compliant per distributor listings. No AEC-Q100 qualification for memory ICs.
