AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas
Артикул: AT45DB041D-SU ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.38 | $138,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
| 3.000 | $0.92 | $2.760,00 |
AT45DB041D-SU Обзор
DataFlash is a category of nonvolatile memory that organizes storage as uniform pages rather than the sectors used by conventional serial NOR flash. Within the memory hierarchy it sits AT Series in the storage IC stack as a low-pin-count alternative to parallel NOR and small NAND, ideally placed between an MCU and any removable storage. The AT45DB041D-SU has 4,325,376 bits organized as 2,048 pages of either 264 bytes (binary mode) or 256 bytes (standard mode), giving 528 KB or 512 KB depending on the configuration selected at design time.
Key specifications include a RapidS serial interface compatible with SPI modes 0 and 3 at 66 MHz maximum clock frequency, single-cycle page programming, an industry-leading endurance of 100,000 program/erase cycles per page, a minimum 20-year data retention, and two independent 264-byte SRAM data buffers that allow simultaneous read/write of the host side while a page is being programmed in the background. The device also offers a 128-byte security register, page erase, block erase, and chip erase.
Technically the device uses a dual-buffer architecture in which the two SRAM buffers decouple the SPI bus from internal program/erase timing, so the host can stream the next data block at full 66 MHz while the previous page programs in the background. The single 2.7 V to 3.6 V supply allows direct connection to 3.3 V MCU rails without a level shifter.
Typical applications include digital voice recorders, image storage buffers in digital cameras, program code and data storage in 8/16/32-bit embedded controllers, DSP coefficient storage, and battery-powered data loggers. The dual-buffer architecture makes it especially attractive where continuous streaming is required without flow control.
When designing with this device, choose either the 256-byte or 264-byte page mode at design time, since the two modes use different opcodes and configuration register settings and are not interchangeable after firmware is locked in. Use a 1 kΩ to 10 kΩ pull-up on the CS pin to avoid spurious selection during power-up.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet. Pricing referenced is as of 2026-10-06.
Аналоги без доработки для AT45DB041D-SU — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с AT45DB041D-SU (тот же форм-фактор и посадочное место) — отличается по Memory Type, Organization, Package, Interface, Write Protection.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
AT45DB041E-SHN-T
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AT45DB041D-SU-SL954
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AT45DB041D-SU-SL383
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
W25M512JVEIQ
✅ Прямая замена✓ В наличии
$3.64 / шт.
Открыть даташит →M25P32-VMW3TGB
✅ Прямая замена✓ В наличии
$1.55 / шт.
Открыть даташит →M25P16-VMN3TPB
✅ Прямая замена✓ В наличии
$0.63 / шт.
Открыть даташит →AT45DB041D-SU Максимальные параметры и электрические характеристики
| Тип памяти | DataFLASH NOR |
| Memory Format | FLASH |
| Density | 4 Mbit (4,325,376 bits) |
| Организация памяти | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| Интерфейс | SPI, RapidS (SPI modes 0 and 3) |
| Максимальная тактовая частота | 66 MHz |
| Напряжение питания | 2.7 V to 3.6 V |
| SRAM Data Buffers | 2 x 264 bytes |
| Endurance | 100,000 program/erase cycles per page |
| Data Retention | 20 years minimum |
| Security Register | 128 bytes |
| Корпус | 8-pin SOIC (150 mil, EIAJ) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов AT45DB041D-SU
| Контакт 1 | CS — Chip Select (active low, internal pull-up) |
| Контакт 2 | SCK — Serial Clock |
| Контакт 3 | SI — Serial Input (MOSI) |
| Контакт 4 | SO — Serial Output (MISO) |
| Контакт 5 | WP — Write Protect (active low, internal pull-up) |
| Контакт 6 | GND — Ground |
| Контакт 7 | RESET — Reset (active low, internal pull-up) |
| Контакт 8 | VCC — Power supply (2.7 V to 3.6 V) |
Типичное применение
AT45DB041D-SU подходит для 6 применениеs: Digital Voice Recorder, Digital Camera Image Buffer, Embedded Controller Code and Data Storage, DSP Coefficient Storage, Battery-Powered Data Logger, Industrial Control Configuration Storage.
Digital Voice Recorder
The AT45DB041D-SU is widely used as the storage medium in digital voice recorders and audio-logging products, where the two on-chip 264-byte SRAM buffers are ideal for streaming ADPCM or PCM audio from a microphone ADC. Operating from 2.7 V to 3.6 V on a single rail, the device pairs directly with battery-powered MCU systems without a level shifter. The 4 Mbit capacity stores roughly 4 minutes of 8 kHz 8-bit audio, sufficient for handheld recorders and intercom systems. The RapidS SPI interface at 66 MHz keeps up with full-duplex audio streaming while the page program operation runs in the background. A 100,000-cycle endurance rating supports typical voice memo duty cycles (a few writes per minute for many years).
Рекомендуется
Digital Camera Image Buffer
In digital still cameras and imaging modules, the AT45DB041D-SU serves as an image data buffer between the image sensor and removable storage card. The two SRAM data buffers let the MCU continue capturing the next frame while the first buffer's contents are being programmed into flash, doubling throughput versus single-buffer serial NOR. The 4 Mbit capacity holds one to two compressed JPEG frames, sufficient as a FIFO for consumer digital cameras and webcam modules. The 8-SOIC 150-mil package is small enough to fit next to the image sensor on a compact PCB. SPI clock up to 66 MHz keeps up with image sensor pixel clocks at typical VGA resolutions.
Рекомендуется
Embedded Controller Code and Data Storage
The AT45DB041D-SU is widely used for program code storage and parameter data in 8-bit, 16-bit and 32-bit embedded controllers where the SPI bus is already in use. With 4 Mbit (512 KB) it accommodates mid-sized firmware images for ARM Cortex-M0/M3 and similar MCUs that XIP from a parallel flash. The 66 MHz RapidS interface supports fast boot loading and runtime data logging with the dual-buffer architecture allowing concurrent host read and internal program/erase. The 2.7 V to 3.6 V single supply matches common 3.3 V MCU rails directly without a level shifter. 100,000-cycle endurance suits parameter storage that is updated occasionally over a product lifetime.
Рекомендуется
DSP Coefficient Storage
Audio and signal-processing DSPs often require on-board storage for filter coefficients, lookup tables, and small kernel functions, and the AT45DB041D-SU is well suited to this role. The 264-byte page size matches typical 32-tap FIR coefficient blocks padded to a 264-byte page boundary, allowing the DSP to load full coefficient sets in single SPI transactions. The 66 MHz RapidS interface can feed coefficient data fast enough for real-time DSP block updates during audio processing. The dual-buffer architecture lets the DSP read the next coefficient set while a previous set is being updated in flash background. The 8-SOIC 150-mil package fits easily alongside DSPs on compact audio boards.
Рекомендуется
Battery-Powered Data Logger
In battery-powered wireless sensor nodes and portable data loggers, the AT45DB041D-SU is used for non-volatile storage of sensor samples because of its low-power 3.3 V operation and dual-buffer streaming. Operating from 2.7 V to 3.6 V, it pairs directly with coin-cell or Li-ion powered MCUs and sensors without a boost converter. The 4 Mbit density stores thousands of sensor samples in 264-byte pages, sufficient for typical hourly sensor-logging deployments lasting months between battery changes. The 100,000-cycle endurance per page supports long deployments where the same page is rewritten many times. The 8-SOIC 150-mil package fits compact sensor-node PCBs.
Рекомендуется
Industrial Control Configuration Storage
In industrial controllers, PLCs and HMIs, the AT45DB041D-SU stores configuration parameters, fault logs, and small calibration tables that are written occasionally but must survive 20 years of unpowered storage. The 100,000-cycle endurance and 20-year data retention rating are ideal for industrial settings where field service is expensive and field-replaceable flash must be reliable. The 2.7 V to 3.6 V supply tolerance accommodates typical industrial 24 V->3.3 V DC-DC rails without a level shifter. The dual-buffer architecture allows background page writes while the host CPU services real-time industrial control loops without flow control. The 8-SOIC 150-mil EIAJ package has long-term RoHS-compliant availability for industrial life-cycle programs.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для AT45DB041D-SU — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | AT45DB041E-SHN-T | AT45DB041D-SU-SL954 | AT45DB041D-SU-SL383 | W25M512JVEIQ | M25P32-VMW3TGB | M25P16-VMN3TPB |
|---|---|---|---|---|---|---|---|
| Brand | Renesas Electronics (formerly Atmel) | Renesas Electronics | Renesas Electronics | Renesas Electronics | Winbond | STMicroelectronics (Micron die) | STMicroelectronics (Micron die) |
| Package | 8-SOIC (150 mil, EIAJ) | 8-SOIC (150 mil) | 8-SOIC (150 mil) | 8-SOIC (150 mil) | 8-SOIC (150 mil) | 8-SOIC (150 mil) | 8-SOIC (150 mil) |
| Density | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit | 512 Mbit | 32 Mbit | 16 Mbit |
| Maximum SPI Clock | 66 MHz | 85 MHz | 66 MHz | 66 MHz | 104 MHz | 75 MHz | 75 MHz |
| Minimum Supply Voltage | 2.7 V | 1.65 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
| Maximum Supply Voltage | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Architecture | DataFlash dual-SRAM-buffer | DataFlash dual-SRAM-buffer | DataFlash dual-SRAM-buffer | DataFlash dual-SRAM-buffer | Standard serial NOR (no dual-buffer) | Standard serial NOR (no dual-buffer) | Standard serial NOR (no dual-buffer) |
| Page Size | 264 bytes (binary) / 256 bytes (standard) | 264 bytes / 256 bytes | 264 bytes / 256 bytes | 264 bytes / 256 bytes | 256 bytes page, 4 KB sector | 256 bytes page, 64 KB sector | 256 bytes page, 64 KB sector |
| Endurance | 100,000 cycles per page | 100,000 cycles | 100,000 cycles | 100,000 cycles | 100,000 cycles | 100,000 cycles | 100,000 cycles |
Ключевые отличия
- Dual 264-byte SRAM buffer architecture not found in standard serial NOR (против M25P32-VMW3TGB (ST/Micron serial NOR))
- Extended low-voltage operation from 1.65 V (против AT45DB041D-SU-SL954 (same die, 2.7 V min))
- Higher maximum SPI clock frequency (против AT45DB041D-SU-SL383 (same 66 MHz))
Заметки по проектированию
Choose either the 256-byte or 264-byte page mode at design time and lock the configuration register in firmware. The two modes use different opcodes for page read, page program and status read, so changing the mode after firmware is finalized will break all flash transactions. According to the AT45DB041D datasheet, the configuration register setting is non-volatile but can be temporarily overridden for migration testing only.
Place a 100 nF decoupling capacitor as close as possible to the VCC pin (pin 8) and a 4.7 uF to 10 uF bulk capacitor on the same 3.3 V rail. The CS pin (pin 1) should have a 10 kΩ pull-up to VCC to prevent spurious selection during MCU reset. The SCK trace should be kept short (under 50 mm) and routed away from high-current switching traces to avoid SPI timing glitches at 66 MHz.
During page program and erase operations the AT45DB041D-SU draws up to 25 mA from VCC, which can cause a measurable voltage droop on lightly-designed 3.3 V rails. Ensure the regulator can supply at least 50 mA peak, and add a 10 uF bulk capacitor near the device to absorb the inrush. The active read current is much lower (around 4 mA at 66 MHz), so decoupling matters mainly during background programming.
Информация о соответствии
RoHS and lead-free status per Renesas product page. AEC-Q100 not applicable for non-automotive memory IC.
