AT45DB041E-SSHN2B-T - 4Mbit SPI DataFlash, 85MHz, 8-SOIC | Renesas
Артикул: AT45DB041E-SSHN2B-T ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.39 | $2,39 |
| 10 | $2.18 | $21,80 |
| 100 | $1.85 | $185,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.4 | $1.400,00 |
AT45DB041E-SSHN2B-T Обзор
A DataFlash is a serial NOR Flash memory optimized for sequential, page-oriented access rather than random byte access. Compared with standard SPI NOR, it adds on-chip dual SRAM buffers that enable simultaneous read-while-write and erase-while-write operation, dramatically reducing processor overhead for data logging. DataFlash sits in the broader hierarchy as a sub-class of NOR Flash -> non-volatile memory -> semiconductor memory, complementary to denser but slower NAND Flash.
Key features include 4 Mbit density in a 256/264-byte page architecture, dual on-chip SRAM buffers (256/264 bytes each), hardware and software write protection, an absolute write protection pin, power-on reset, and JEDEC manufacturer/device ID read-back. The 85 MHz RapidS interface enables fast boot and continuous data capture, while the wide 1.65 V to 3.6 V supply range allows direct connection to 1.8 V, 2.5 V, and 3.3 V rails without level shifters.
The AT45DB041E-SSHN2B-T uses a 3-wire SPI interface (SI, SO, SCK) plus chip select, accessed through standard op-codes for page read, page program, block erase, sector erase, chip erase, and buffer read/write. Its page-erase granularity is as small as 256 bytes, much finer than the 4 KB to 64 KB sectors of competing SPI NOR parts, simplifying software wear-leveling for data-logging use cases.
Typical applications include digital voice recording, image storage, firmware shadowing, IoT sensor data capture, and industrial data logging. Its wide Vcc range and small footprint also suit battery-powered wearables, smart meters, and point-of-sale terminals where the SPI host is a low-power MCU.
When designing with this part, observe the Vcc decoupling requirement of 0.1 µF placed within 5 mm of the VCC pin, hold CS high during power-up until Vcc stabilizes, and avoid simultaneous buffer-1 read and buffer-2 write operations to the same page address without arbitration in firmware.
This page synthesizes distributor pricing, drop-in alternatives from the same AT45DB041E family and competing SPI Flash parts, and practical design notes not collected in the manufacturer datasheet alone.
Аналоги без доработки для AT45DB041E-SSHN2B-T — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с AT45DB041E-SSHN2B-T (тот же форм-фактор и посадочное место) — отличается по Memory Type, Organization, Package, Maximum Clock Frequency, Interface Type.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
AT45DB041E-SSHN-T
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AT45DB041E-SHN-B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AT45DB041D-SU
✅ Прямая замена✓ В наличии
$0.92 / шт.
Открыть даташит →AT45DB011D-SH-SL955
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MX25L4006E
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AT45DB041E-SSHN2B-T Максимальные параметры и электрические характеристики
| Тип памяти | Non-volatile Flash (DataFlash / NOR) |
| Размер памяти | 4 Mbit (4,194,304 bits) |
| Организация памяти | 2,048 pages x 256 bytes (or 264 bytes binary page mode) |
| Тип интерфейса | SPI (Modes 0 and 3) / RapidS |
| Максимальная тактовая частота | 85 MHz |
| Supply Voltage (Vcc) | 1.65 V to 3.6 V |
| Рабочая температура | -40 °C to +85 °C |
| Корпус | 8-SOIC (SOIC-N 150 mil) |
| Тип монтажа | Surface Mount |
| Page Size | 256 bytes / 264 bytes |
| SRAM Buffers | 2 x 256/264 bytes (dual buffer) |
| Sector / Block Erase | Page erase as small as 256 bytes |
| Write Protection | Hardware, Software, and Absolute write protection |
| Power-on Reset | Yes (integrated) |
| Статус RoHS | Compliant |
Конфигурация выводов AT45DB041E-SSHN2B-T
| Контакт 1 | CS — Chip Select, active low |
| Контакт 2 | SO — Serial Output (MISO) |
| Контакт 3 | WP — Write Protect, active low |
| Контакт 4 | GND — Ground |
| Контакт 5 | SI — Serial Input (MOSI) |
| Контакт 6 | SCK — Serial Clock |
| Контакт 7 | HOLD — Hold, active low (pauses serial I/O) |
| Контакт 8 | VCC — Power supply, 1.65 V to 3.6 V |
Типичное применение
AT45DB041E-SSHN2B-T подходит для 7 применениеs: Digital Voice Recording, Industrial Data Logging, IoT Sensor Data Capture, Firmware Shadowing, Image Storage for Low-Cost Cameras, Smart Meter Data Retention, Point-of-Sale Terminal Storage.
Digital Voice Recording
The AT45DB041E-SSHN2B-T's 4 Mbit density and dual on-chip SRAM buffers make it a strong match for digital voice recording. 4 Mbit stores approximately 4 minutes of uncompressed 8 kHz / 8-bit PCM audio, or longer with ADPCM compression. According to the Adesto datasheet, the dual-buffer architecture lets the host DSP push one buffer while the other streams to the codec, eliminating page-write stalls. The 85 MHz RapidS clock sustains continuous read at ~10 MB/s, sufficient for real-time audio playback without MCU intervention.
Рекомендуется
Industrial Data Logging
Industrial data loggers use the AT45DB041E-SSHN2B-T to time-series store sensor measurements (temperature, vibration, current) over weeks of unattended operation. The wide 1.65 V to 3.6 V supply range accommodates 3.3 V industrial rails, while the 256-byte page granularity minimizes write energy per sample. According to Adesto, the dual-buffer architecture enables the host to write buffer-1 while the device erases and programs the previous page, doubling effective throughput versus standard SPI NOR. Hardware WP enables tamper-evident logging.
Рекомендуется
IoT Sensor Data Capture
The AT45DB041E-SSHN2B-T suits IoT sensor nodes because of its 1.65 V minimum Vcc, which allows direct connection to single-cell lithium or energy-harvested supplies without boost regulators. The dual 256-byte SRAM buffers let low-power MCUs like the PIC32MX or MSP430 batch sensor samples into one buffer while the other flushes to Flash, optimizing sleep duty cycle. According to the Adesto datasheet, deep power-down current is in the microamp range, preserving battery life in sleep-dominant applications.
Рекомендуется
Firmware Shadowing
Embedded systems use the AT45DB041E-SSHN2B-T as a firmware shadow bank, where new images are downloaded into one buffer/page set while the host continues running from the existing image in main Flash. The dual-buffer architecture simplifies A/B firmware roll-back schemes because the host can swap images via SPI opcode without complex pointer management. According to Adesto, the 85 MHz RapidS clock allows 4 Mbit firmware images to load in <50 ms, minimizing boot latency for consumer appliances.
Рекомендуется
Image Storage for Low-Cost Cameras
Low-cost barcode scanners, dashcams, and entry-level machine-vision modules use the AT45DB041E-SSHN2B-T to store JPEG-compressed images. 4 Mbit accommodates several compressed frames (typical 320x240 JPEG ~10 KB each = ~50 images). The 85 MHz SPI clock supports fast burst writes from the camera ISP into one buffer while the MCU reads the previous frame from the other. According to the Adesto datasheet, simultaneous read-while-write eliminates the need for double-storage or external SDRAM in many camera SoCs.
Рекомендуется
Smart Meter Data Retention
Smart electricity, gas, and water meters use the AT45DB041E-SSHN2B-T to retain time-of-use consumption logs, tamper events, and configuration over power-cycles. The wide 1.65 V to 3.6 V supply range lets the part ride out battery backup during line-power outages. Hardware WP and absolute write protection provide tamper-evidence required by utility regulators. According to Adesto, 100k endurance per page supports >10 years of monthly logging in typical metering deployments.
Рекомендуется
Point-of-Sale Terminal Storage
POS terminals use the AT45DB041E-SSHN2B-T to store transaction logs, fonts, and bitmap UI assets. The wide Vcc range supports both battery-backed and 3.3 V-powered terminal designs without a separate Flash SKU. The dual-buffer architecture lets the terminal flush logs in the background while continuing to display UI from the other buffer. According to Adesto, hardware WP prevents accidental erasure of transaction history, simplifying PCI compliance for payment terminals.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для AT45DB041E-SSHN2B-T — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | AT45DB041E-SSHN-T | AT45DB041E-SHN-B | AT45DB041D-SU | MX25L4006E |
|---|---|---|---|---|---|
| Brand | Renesas Electronics (Adesto legacy) | Renesas Electronics | Renesas Electronics | Renesas Electronics | Macronix |
| Package | 8-SOIC (150 mil) | 8-SOIC (150 mil) - same | 8-SOIC (150 mil) - same | 8-SOIC - same | 8-SOIC (150 mil) - same |
| Density | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit |
| Interface | SPI / RapidS, up to 85 MHz | SPI / RapidS, 85 MHz | SPI / RapidS, 85 MHz | SPI, 66 MHz | SPI standard, 75 MHz |
| Vcc Range | 1.65 V to 3.6 V | 1.65 V to 3.6 V | 1.65 V to 3.6 V | 2.5 V to 3.6 V | 2.3 V to 3.6 V |
| Architecture | DataFlash with dual SRAM buffers | DataFlash dual buffer | DataFlash dual buffer | DataFlash dual buffer | Standard SPI NOR (no dual buffer) |
| Page / Sector Size | 256/264 bytes page erase | 256/264 bytes page | 256/264 bytes page | 256/264 bytes page | 4 KB sector (NOR) |
| Operating Temperature | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C | -40 °C to +85 °C |
Ключевые отличия
- Dual on-chip SRAM buffers for background erase-while-write (против MX25L4006E)
- Widest Vcc range in the AT45DB041E family (против AT45DB041D-SU)
- Higher SPI clock rate than legacy generation (против AT45DB041D-SU)
Заметки по проектированию
Place a 0.1 µF decoupling capacitor within 5 mm of the VCC pin (pin 8) and a 1 µF bulk capacitor near the SOIC package to suppress transient currents during page-program operations. The Adata datasheet recommends a 10 µF bulk cap if VCC source impedance is high. Hold CS high during VCC ramp-up until VCC stabilizes above 1.65 V; otherwise the device may enter an undefined state. Estimated: at 85 MHz RapidS read with 15 mA active current, expect ~25 µV ripple on a 1 oz copper pour without local decoupling.
Route SPI traces (SCK, SI, SO, CS) as a bus with matched lengths within 25 mm to avoid timing skew at 85 MHz. Keep the SPI bus away from switching regulator inductors or noisy clock traces; cross over noisy traces at 90 degrees only. The WP and HOLD pins should be tied to VCC through 10 kΩ pull-ups if not actively driven by the host, to prevent accidental protection assertion. The exposed pad is not present on the 8-SOIC, so no thermal pad stitching is required.
Avoid simultaneous buffer-1 read and buffer-2 write to the same main-memory page address without firmware arbitration; the device does not block this internally and result data may be incoherent. Per Adesto datasheet, ensure /CS toggle between unrelated opcodes - do not concatenate page-program and page-read opcodes without deselecting. WP low only protects STATUS register writes and programming; it does NOT block reads. For full read-during-program, both buffers must be used in ping-pong mode.
Информация о соответствии
RoHS compliant per Renesas/Adesto product page. Not AEC-Q100 qualified - this part targets commercial and industrial, not automotive. Conflict-minerals compliant per Renesas declaration. MSL rating and detailed halogen-free test report were not present in the verified web data - see _validation_note.
