CY14V104LA - 4Mb Parallel nvSRAM 3.3V 48-FBGA | Infineon
Артикул: CY14V104LA ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $18.5 | $18,50 |
| 10 | $16.4 | $164,00 |
| 100 | $13.95 | $1.395,00 |
| 500 | $12.2 | $6.100,00 |
| 1.000 | $10.85 | $10.850,00 |
CY14V104LA Обзор
An nvSRAM (non-volatile SRAM) is a hybrid memory class that pairs standard SRAM cells (typically 6T) with a non-volatile element per cell - either a small SONOS-style charge trap or an EEPROM/FRAM-like element - so that on VCC drop the entire contents can be stored to the non-volatile layer in microseconds, then restored on the next power-up. Compared with pure SRAM, nvSRAM eliminates external battery, supercapacitor, or EEPROM-shadow designs; compared with serial EEPROM or FRAM, it offers true parallel bus access and unlimited read endurance. nvSRAMs sit in the memory hierarchy between SRAM (highest speed, volatile) and Flash (non-volatile, slow write), targeting applications needing deterministic, high-speed writes without data-loss risk.
Key features include 4-Mbit density organized as 512 Kbytes x 8 or 256 Kwords x 16 (selectable by the /BYTE pin), hardware STORE-on-power-loss using an integrated threshold-detect circuit, automatic RECALL on power-up, and an unlimited SRAM-side read/write endurance typical of static RAM. The parallel interface uses standard JEDEC-style control signals (CE#, OE#, WE#, UB#, LB#) so it can drop into existing SRAM or battery-backed SRAM sockets. The 48-FBGA package is 6 x 10 x 1.20 mm and is RoHS compliant.
Internally the CY14V104LA integrates the SRAM array, the non-volatile element, an on-chip STORE capacitor (no external cap required for energy-limited store), voltage-compare and STORE-control logic, and a software-invoked STORE (HSB pin). The architecture enables 0.7 ms typical STORE time and 0.7 ms typical RECALL time while drawing Icc of about 65 mA active and Isb of about 5 mA standby. The 25 ns grade (-BA25XI suffix) delivers faster system clocks; the 45 ns grade (-BA45XI suffix) targets lower-cost industrial systems.
Typical applications include industrial controllers, programmable logic controllers (PLC), factory automation data loggers, point-of-sale (POS) terminals, metering, RAID controllers, and gaming equipment. The wide -40 C to +85 C industrial temperature range and automatic power-loss protection make the CY14V104LA particularly suited for systems that must survive brown-outs and uncontrolled power-down events without user intervention.
When designing with the CY14V104LA, route the parallel bus with matched trace lengths, keep CE#, OE#, WE# cleanly decoupled to avoid accidental STORE triggering, and follow the datasheet ground-bounce and decoupling recommendations for the 48-FBGA footprint. Note that STORE operations are non-maskable by design - power-supply decoupling directly affects STORE reliability.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the CY14V104LA in a single reference not found in the bare datasheet, including the parametric comparison with the CY14V104NA x16-only and CY14B104L family variants.
Аналоги без доработки для CY14V104LA — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с CY14V104LA (тот же форм-фактор и посадочное место) — отличается по Access Time, Package, Interface, Memory Type, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
CY14V104LA-BA25XI
✅ Прямая замена✓ В наличии
$0.72 / шт.
Открыть даташит →CY14V104NA-BA25XI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY14V104NA-BA45XI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY14V104LA-BA45XIT
✅ Прямая замена✓ В наличии
$4.6 / шт.
Открыть даташит →CY14V104LA-BA25XIT
✅ Прямая замена✓ В наличии
$3.36 / шт.
Открыть даташит →CY14V104LA Максимальные параметры и электрические характеристики
| Density | 4 Mbit (512 K x 8 / 256 K x 16) |
| Тип памяти | Non-Volatile SRAM (nvSRAM) |
| Operating Voltage | 3.3 V (3.0 V min, 3.6 V max) |
| Access Time | 25 ns (BA25) or 45 ns (BA45) |
| Интерфейс | Parallel (asynchronous SRAM-compatible) |
| Bus Width | x8 / x16 selectable (BYTE pin) |
| Корпус | 48-FBGA (6 x 10 x 1.20 mm) |
| Рабочая температура | -40 C to +85 C (industrial) |
| Hardware STORE Pin | HSB (active low) |
| Auto STORE on VCC Drop | Yes (integrated VCc monitor) |
| Read/Write Endurance | Unlimited (SRAM side) |
| Статус RoHS | Compliant |
| Тип монтажа | Surface Mount |
Конфигурация выводов CY14V104LA
| Контакт A1 | NC — Not connected |
| Контакт A2 | A0 — Address input 0 |
| Контакт A3 | A1 — Address input 1 |
| Контакт A4 | A2 — Address input 2 |
| Контакт A5 | A3 — Address input 3 |
| Контакт A6 | A4 — Address input 4 |
| Контакт B1 | NC — Not connected |
| Контакт B2 | A5 — Address input 5 |
| Контакт B3 | A6 — Address input 6 |
| Контакт B4 | A7 — Address input 7 |
| Контакт B5 | A8 — Address input 8 |
| Контакт B6 | A9 — Address input 9 |
| Контакт C1 | DQ0 — Data I/O 0 |
| Контакт C2 | DQ1 — Data I/O 1 |
| Контакт C3 | A10 — Address input 10 |
| Контакт C4 | A11 — Address input 11 |
| Контакт C5 | A12 — Address input 12 |
| Контакт C6 | NC — Not connected |
| Контакт D1 | DQ2 — Data I/O 2 |
| Контакт D2 | DQ3 — Data I/O 3 |
| Контакт D3 | A13 — Address input 13 |
| Контакт D4 | A14 — Address input 14 |
| Контакт D5 | A15 — Address input 15 |
| Контакт D6 | DQ15/A-1 — DQ15 (x16) / A-1 (x8 BYTE mode) |
| Контакт E1 | VCC — Power supply 3.3 V |
| Контакт E2 | DQ4 — Data I/O 4 |
| Контакт E3 | DQ5 — Data I/O 5 |
| Контакт E4 | DQ6 — Data I/O 6 |
| Контакт E5 | DQ7 — Data I/O 7 |
| Контакт E6 | VSS — Ground |
| Контакт F1 | WE# — Write enable, active low |
| Контакт F2 | OE# — Output enable, active low |
| Контакт F3 | BYTE — x8/x16 select (GND = x8, VCC = x16) |
| Контакт F4 | DQ14 — Data I/O 14 |
| Контакт F5 | DQ13 — Data I/O 13 |
| Контакт F6 | HSB — Hardware STORE busy, active low |
| Контакт G1 | CE# — Chip enable, active low |
| Контакт G2 | UB# — Upper byte enable (x16 mode), active low |
| Контакт G3 | LB# — Lower byte enable (x16 mode), active low |
| Контакт G4 | DQ12 — Data I/O 12 |
| Контакт G5 | DQ11 — Data I/O 11 |
| Контакт G6 | DQ10 — Data I/O 10 |
| Контакт H1 | A16 — Address input 16 |
| Контакт H2 | A17 — Address input 17 |
| Контакт H3 | A18 — Address input 18 |
| Контакт H4 | DQ9 — Data I/O 9 |
| Контакт H5 | DQ8 — Data I/O 8 |
| Контакт H6 | VCC — Power supply 3.3 V |
Типичное применение
CY14V104LA подходит для 6 применениеs: Programmable Logic Controller (PLC) Memory, Industrial Data Logger with Power-Loss Protection, Point-of-Sale (POS) Terminal Transaction Buffer, RAID Controller Cache Memory, Smart Electricity Meter Memory, Gaming Machine Configuration Memory.
Programmable Logic Controller (PLC) Memory
The CY14V104LA's 4-Mbit parallel nvSRAM density and automatic STORE-on-power-loss directly fit the parameter, recipe, and event-log retention needs of industrial PLCs. With 45 ns access time the LA can be mapped to a byte-wide or word-wide memory bus behind an M-series MCU, and the integrated VCc monitor ensures all runtime variables are preserved through uncontrolled brown-outs on the 24 V industrial rail. The wide -40 C to +85 C industrial operating temperature handles cabinet environments and the 48-FBGA package fits tightly on PLC main boards. Compared with battery-backed SRAM, the LA removes the periodic battery-replacement maintenance cycle.
Рекомендуется
Industrial Data Logger with Power-Loss Protection
Data loggers in factory automation must capture sensor readings without losing samples across unplanned line-power interruptions, and the CY14V104LA solves this by combining SRAM-grade write speed with a hardware STORE triggered when VCc drops below the threshold. The 4-Mbit capacity accommodates shift-long telemetry buffers and the parallel x8 / x16 interface attaches directly to a low-cost Cortex-M microcontroller without DMA. The 48-FBGA (6 x 10 mm) is a reflow-compatible industrial package suitable for high-vibration machine-mount enclosures, and the unlimited read/write endurance of the SRAM side supports high-frequency logging without retention degradation.
Рекомендуется
Point-of-Sale (POS) Terminal Transaction Buffer
POS terminals depend on immediate write durability for each transaction and the CY14V104LA delivers both: a 25 ns or 45 ns SRAM write path that does not stall the secure transaction flow, plus automatic STORE to non-volatile memory when the cashier accidentally unplugs the terminal or the mains drops during checkout. The 4-Mbit density caches multiple transactions before flushing to a slower NAND or SD card. The parallel bus connects to a POS SoC over a standard asynchronous SRAM interface, and the 48-FBGA package mounts cleanly on the small-footprint main board of an integrated POS terminal.
Рекомендуется
RAID Controller Cache Memory
RAID controllers use nvSRAM to absorb write-back cache during read-modify-write operations and protect dirty-cache contents across power events - the CY14V104LA offers 4 Mbit per device, automatic STORE on VCc drop, and a JEDEC-standard parallel SRAM interface. Placing one CY14V104LA behind the RAID ASIC lets designers retain 512 KB of dirty cache state through an unplanned power cycle, which is critical to avoid RAID consistency rebuilds. The 25 ns access-time grade (-BA25XI) keeps up with high-speed PCIe-attached RAID controllers where every microsecond of write latency matters.
Рекомендуется
Smart Electricity Meter Memory
Smart electricity and gas meters must store rolling consumption, tamper events, and billing data across long power-out scenarios, and the CY14V104LA's automatic STORE on VCc drop preserves this data without battery replacement for the meter's lifetime. The 4-Mbit density supports months of interval-data logs and the parallel x8 interface maps cleanly to low-cost metering MCUs. The industrial -40 C to +85 C operating range handles outdoor meter enclosures from arctic to desert deployments, and the 48-FBGA package is reflow-compatible on the compact metering main board.
Рекомендуется
Gaming Machine Configuration Memory
Casino-style gaming and amusement machines must preserve statistical counters, audit logs, and configuration across both planned shutdowns and tamper events; the CY14V104LA provides 4 Mbit of non-volatile SRAM with an HSB pin that allows software-forced STORE in addition to the auto STORE. The wide industrial temperature range supports cabinet enclosures that may run warm, and the parallel interface attaches to gaming board MCUs without driver overhead. The 48-FBGA package is well-suited to the densely populated gaming main boards where every square millimeter matters.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для CY14V104LA — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | CY14V104LA-BA25XI | CY14V104NA-BA25XI | CY14V104NA-BA45XI | CY14V104LA-BA45XIT | CY14V104LA-BA25XIT |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | 48-FBGA (6x10 mm) | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same | 48-FBGA (6x10 mm) - same |
| Density | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (256K x 16 only) | 4 Mbit (256K x 16 only) | 4 Mbit (512K x 8 / 256K x 16) | 4 Mbit (512K x 8 / 256K x 16) |
| Access Time | 45 ns | 25 ns | 25 ns | 45 ns | 45 ns | 25 ns |
| Operating Voltage | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) | 3.3 V (3.0 V to 3.6 V) |
| BYTE Pin (x8 mode) | Yes (selectable) | Yes | No (x16 only) | No (x16 only) | Yes | Yes |
| Hardware STORE Pin (HSB) | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Automatic STORE-on-power-loss with integrated energy storage (против Battery-backed SRAM)
- Unlimited read/write endurance on SRAM side (против EEPROM shadow memory)
- Selectable x8 / x16 bus via BYTE pin (против CY14V104NA)
Заметки по проектированию
The CY14V104LA performs a hardware STORE when VCc drops below the internal threshold. Place a 0.1 uF decoupling capacitor close to each VCC pin and add a 4.7 uF bulk capacitor on the supply rail feeding the device. According to the Infineon datasheet, the internal STORE capacitor stores enough energy for a complete array store; do not depend on the system supply rail remaining above 2.0 V during the STORE window - the LA handles this internally, but clean VCc is still required for normal operation.
Route the 48-FBGA address, data, and control traces with matched lengths and keep CE#, OE#, WE# cleanly decoupled to avoid accidental STORE triggering. The 6 x 10 mm BGA ball pitch requires NSMD or SMD pads sized to manufacturer recommendations to survive reflow and meet long-term solder-joint reliability. Add ground vias in the BGA courtyard to provide a thermal/return path.
The BYTE pin must not be left floating - either strap it to GND (x8 mode) or VCC (x16 mode) per the Infineon datasheet. Floating BYTE can cause the device to enter an indeterminate bus-width state. Likewise, the HSB pin should be monitored by the MCU; a low HSB indicates an active or failed STORE and should not be ignored. Estimated: ground-bounce under simultaneous x16 switching at 25 ns access time may approach 200 mV - keep high-frequency decoupling close.
Информация о соответствии
RoHS and REACH compliant per manufacturer datasheet. Industrial grade only - not AEC-Q100 qualified for automotive. Use CY14V104LA-25I/45I variants for industrial -40 C to +85 C operating temperature.
