IAUCN08S7L013ATMA1 - 80V N-Channel OptiMOS 7 MOSFET | Infineon
Артикул: IAUCN08S7L013ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.12 | $3,12 |
| 10 | $2.81 | $28,10 |
| 100 | $2.49 | $249,00 |
| 500 | $2.21 | $1.105,00 |
| 1.000 | $1.96 | $1.960,00 |
IAUCN08S7L013ATMA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the dominant switching element in modern DC-DC conversion, motor control, and load management circuits. MOSFETs sit within the broader power semiconductor taxonomy (power MOSFET -> discrete semiconductor -> power management), and N-channel enhancement-mode devices like this one are preferred over P-channel equivalents because their lower on-resistance per unit silicon area translates directly into lower conduction loss. The OptiMOS 7 generation from Infineon represents the latest refinement of trench-gate technology, with optimized figure-of-merit (FOM = RDS(on) × Qg) targeting high-frequency switching applications.
Key electrical characteristics include a 1.26 mΩ maximum on-resistance at VGS = 10 V, 175 A continuous drain current at 100 °C case, and threshold voltage compatible with 12 V automotive gate-drive architectures. The PG-TDSON-8-53 package's exposed die pad minimizes junction-to-case thermal resistance, enabling sustained high-current operation without external heatsinking in well-designed PCB layouts. The OptiMOS 7 cell structure also reduces body-diode reverse-recovery charge, beneficial for synchronous rectification and bridge topologies.
Typical automotive applications include 48 V mild-hybrid (MHEV) systems, electric power steering (EPS), brake-by-wire, DC-DC converters between 12 V and 48 V buses, and high-current solenoid or motor drivers. The combination of ultra-low RDS(on) and compact packaging makes the IAUCN08S7L013ATMA1 particularly well suited to high-current synchronous rectification stages where conduction loss dominates the thermal budget.
When designing with this part, observe strict PCB layout practices to minimize parasitic source inductance that can otherwise induce drain-voltage transients exceeding the 80 V rating. Use a gate-drive voltage of 10 V to achieve the specified RDS(on); under-driving at 4.5 V can increase on-resistance by 50 % or more. AEC-Q101 qualification supports deployment under the PPAP framework typical of OEM automotive supply chains.
Аналоги без доработки для IAUCN08S7L013ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUCN08S7L013ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Operating Temperature Range, Technology, MSL Level, Drain-Source Voltage (VDS).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUCN08S7L033ATMA1
✅ Прямая замена✓ В наличии
$0.86 / шт.
Открыть даташит →IAUCN10S5L280DATMA1
✅ Прямая замена✓ В наличии
$1.62 / шт.
Открыть даташит →ISC045N03L5SATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.51 / шт.
Открыть даташит →IAUCN04S7L050HATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.83 / шт.
Открыть даташит →ISC011N04NM7VATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.41 / шт.
Открыть даташит →IAUCN08S7L013ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 7 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Maximum On-Resistance (RDS(on) max) | 1.26 mΩ |
| Continuous Drain Current (TJ) | 293 A |
| Power Dissipation (TC) | 219 W |
| Gate Drive Voltage (typical) | 10 V |
| Диапазон рабочих температур | -55 °C to +175 °C |
| Корпус | PG-TDSON-8-53 (TDSON-8 FL) |
| Тип монтажа | Surface Mount |
| Qualification | AEC-Q101 (automotive) |
| Статус RoHS | Compliant |
| Packaging | Tape & Reel (suffix ATMA1) |
Конфигурация выводов IAUCN08S7L013ATMA1
| Контакт 1 | Gate — Gate drive input |
| Контакт 2 | Drain — Drain connection (also routed through thermal pad) |
| Контакт 3 | Drain — Drain connection (also routed through thermal pad) |
| Контакт 4 | Drain — Drain connection (also routed through thermal pad) |
| Контакт 5 | Source — Source connection |
| Контакт 6 | Source — Source connection |
| Контакт 7 | Source — Source connection |
| Контакт 8 | Source — Source connection |
Область безопасной работы
Типичное применение
IAUCN08S7L013ATMA1 подходит для 6 применениеs: 48 V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS), Brake-by-Wire Solenoid Driver, Server 48 V Hot-Swap Controller, Industrial 24 V Brushless DC Motor Drive, Automotive LED Headlight Driver.
48 V Mild-Hybrid DC-DC Converter
The IAUCN08S7L013ATMA1 fits 48 V MHEV DC-DC converter primary-side switching with its 80 V VDS providing margin above the 52 V ISO 21780 transient envelope and its 1.26 mΩ RDS(on) minimizing conduction loss at 175 A continuous. Placed in a synchronous-rectifier or half-bridge leg, the device handles 20 kHz to 100 kHz switching with reduced Qg figures from the OptiMOS 7 platform. Engineers must use Kelvin-source connection to keep gate-drive loop inductance below 5 nH and prevent dv/dt-induced false turn-on.
Рекомендуется
Electric Power Steering (EPS)
Automotive EPS systems use the IAUCN08S7L013ATMA1 in the BLDC motor inverter bridge where its 293 A peak current rating and 175 °C maximum junction temperature cover transient steering assist loads. The 1.26 mΩ on-resistance reduces I²R losses and enables higher continuous motor torque. The exposed thermal pad of PG-TDSON-8-53 simplifies PCB-side cooling through direct copper-pour attachment, eliminating the need for external heatsinks in the EPS housing.
Рекомендуется
Brake-by-Wire Solenoid Driver
Brake-by-wire actuators require a high-current low-side switch to energize hydraulic solenoids; the IAUCN08S7L013ATMA1 fits with its 80 V VDS derated below 48 V bus transients, 175 A continuous current, and AEC-Q101 qualification. Its 1.26 mΩ RDS(on) keeps steady-state conduction loss below 4 W at 50 A peak solenoid current, which is essential when the driver sits inside the engine bay at elevated ambient temperatures.
Рекомендуется
Server 48 V Hot-Swap Controller
In data-center 48 V intermediate bus converters and hot-swap circuits, the IAUCN08S7L013ATMA1 serves as the high-side OR-ing or hot-swap FET. The 80 V rating tolerates 48 V nominal with surge margin, while the 1.26 mΩ RDS(on) keeps voltage drop below 220 mV at 175 A, well within the OR-ing FET budget. The exposed thermal pad supports PCB cooling through the inner copper planes used in server PCBs.
Рекомендуется
Industrial 24 V Brushless DC Motor Drive
Industrial BLDC motor drives running from a 24 V or 36 V bus use the IAUCN08S7L013ATMA1 in three-phase inverter legs. Its 80 V rating provides robust margin above rectified 24 V AC or 36 V DC bus levels, while the 1.26 mΩ RDS(on) reduces per-switch loss and enables higher PWM frequency for smoother torque. The compact PG-TDSON-8-53 package fits within tight motor-control PCB form factors.
Рекомендуется
Automotive LED Headlight Driver
High-current LED headlamp drivers use the IAUCN08S7L013ATMA1 as the high-side PWM switch or buck-converter pass element. Its 1.26 mΩ RDS(on) at VGS = 10 V keeps conduction loss below 3 W at typical headlamp currents of 50 A, while its 80 V VDS handles automotive load-dump transients up to 35 V without avalanche. The AEC-Q101 qualification supports deployment in safety-critical front-lighting modules.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUCN08S7L013ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUCN08S7L033ATMA1 | IAUCN10S5L280DATMA1 | ISC045N03L5SATMA1 | IAUCN04S7L050HATMA1 | ISC011N04NM7VATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-53 | PG-TDSON-8-53 | PG-TDSON-8-53 | PG-TDSON-8-53 | PG-TDSON-8-53 | PG-TDSON-8-53 |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 100 V | 30 V | 40 V | 40 V |
| RDS(on) max at VGS=10V | 1.26 mΩ | 1.7 mΩ | 2.8 mΩ | 4.5 mΩ | 5.0 mΩ | 1.1 mΩ |
| Channel Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes | Yes |
| Unit Price (1pc) | USD 3.12 | USD 2.65 | USD 1.95 | USD 1.45 | USD 1.85 | USD 3.45 |
Ключевые отличия
- Lowest RDS(on) in the 80 V OptiMOS 7 TDSON-8 family (против IAUCN08S7L033ATMA1)
- Higher VDS rating than 40 V OptiMOS 7 alternatives (против IAUCN04S7L050HATMA1)
- AEC-Q101 qualification with OptiMOS 7 performance (против IPC100N04S51R7ATMA1)
Заметки по проектированию
Place the IAUCN08S7L013ATMA1 with its exposed thermal pad over a copper pour of at least 1 square inch (645 mm²) on top layer, stitched to internal layers with 0.3 mm thermal vias in a 1.0 mm pitch grid. Gate-drive traces must be kept short (<10 mm) and routed over a continuous ground-return path. Avoid routing switching node copper above sensitive analog traces to minimize capacitive coupling.
Estimated: At continuous drain current of 175 A and RDS(on) of 1.26 mΩ, conduction loss equals I² × RDS(on) = 175² × 0.00126 ≈ 38.6 W. With PCB-mounted thermal resistance of approximately 30 °C/W (assuming 1 in² copper pour, no airflow), junction temperature rises by ~1158 °C above 25 °C ambient. Use reduced duty cycle or active airflow to keep junction below 175 °C. Source: thermal estimate based on Infineon datasheet SOA curves.
Drive the IAUCN08S7L013ATMA1 with at least 10 V gate-source voltage to achieve the datasheet 1.26 mΩ RDS(on); a 4.5 V gate drive (typical for logic-level MOSFETs) can increase on-resistance by 50 % or more, dramatically raising conduction loss. Ensure the gate-drive IC can source/sink at least 1 A peak to charge the MOSFET's input capacitance within the target switching period. Use a Kelvin-source connection when source inductance exceeds 5 nH.
Minimize source-inductance loop area between the MOSFET source pad and the gate-driver ground reference. A high dV/dt × Lsource product can induce a negative gate-source transient that partially turns on the device (Miller-effect self-turn-on). Place a 10 Ω to 47 Ω gate resistor and a gate-source pull-down of 10 kΩ to hold the MOSFET off during controller reset.
Информация о соответствии
AEC-Q101 qualified per Infineon datasheet. RoHS and REACH compliant per Infineon product page. Halogen-free per Infineon OptiMOS 7 family standard.
