IGC019S06S1XTMA1 - 60V GaN FET 1.3mΩ CoolGaN G3 | Infineon
Артикул: IGC019S06S1XTMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
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| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IGC019S06S1XTMA1 Обзор
A GaN power transistor is a wide-bandgap semiconductor switch belonging to the power transistor hierarchy: GaN HEMT -> FET -> power semiconductor -> power management. Unlike silicon MOSFETs, gallium nitride devices exhibit far lower gate charge and zero reverse-recovery loss, enabling faster switching frequencies, higher power density, and improved efficiency in medium-voltage converters. The normally-off (enhancement-mode) behavior means the device is OFF at zero gate voltage, simplifying gate-drive design and improving fail-safe behavior compared with cascode or depletion-mode GaN approaches.
Key features of the IGC019S06S1XTMA1 include 1.3 mohm on-state resistance for minimal conduction loss, a 60 V drain-source rating for medium-voltage rails, current capability of 27 A at ambient and up to 99 A with adequate board cooling, and power dissipation of 3.3 W (Ta) or 45 W (Tc) depending on thermal management.
Technically, the CoolGaN G3 generation from Infineon Technologies uses a lateral e-mode GaN HEMT structure optimized for high-frequency hard- and soft-switching. The PQFN 3x5 footprint keeps parasitic inductance low, which is critical because fast dv/dt and di/dt edges typical of GaN converters otherwise cause ringing and EMI.
Typical applications include high-density LLC and buck converters, 48 V server and telecom power stages, USB-PD and adapter designs, and Class-D audio output stages where switching speed and low Rds(on) directly improve efficiency.
Design consideration: because GaN parts have tight gate-drive requirements, keep the gate loop short and follow Infineon layout guidance; the exposed drain pad must be soldered to a generous copper pour for the 45 W (Tc) capability to be realized.
This page synthesizes distributor listings, datasheet data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для IGC019S06S1XTMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IGB019S06S1XTMA1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IGC019S06S1XTSA1
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IGC019S06S1XTMA1 Максимальные параметры и электрические характеристики
| Technology | CoolGaN G3 GaN HEMT (enhancement-mode, normally-off) |
| Polarity | N-Channel |
| Drain-Source Voltage (Vds) | 60 V |
| On-State Resistance (Rds(on)) | 1.3 mohm |
| Continuous Drain Current (Ta) | 27 A |
| Continuous Drain Current (Tc) | 99 A |
| Power Dissipation (Ta) | 3.3 W |
| Power Dissipation (Tc) | 45 W |
| Корпус | PG-TSON-6-2 (PQFN 3x5 mm) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
Руководство по цоколевке IGC019S06S1XTMA1 в корпусе pg-tson-6-2 (pqfn 3x5 mm)
Цоколевка для IGC019S06S1XTMA1 (корпус pg-tson-6-2 (pqfn 3x5 mm)). Этот силовой прибор имеет выводы затвора, стока и истока. Для неполяризованных корпусов обратитесь к техническому описанию производителя для точной ориентации вывода 1 и деталей посадочного места. Типичные применения включают проектирование источников питания, управление двигателями и коммутацию нагрузки.
Нет подробных данных о распиновке для IGC019S06S1XTMA1.
Обратитесь к даташиту для полной конфигурации выводов.
Область безопасной работы
Типичное применение
IGC019S06S1XTMA1 подходит для 6 применениеs: 48V Server and Telecom Power Supplies, USB-PD Fast Chargers and Adapters, LLC Resonant Converters, High-Frequency DC-DC Buck Converters, Class-D Audio Amplifier Output Stages, Industrial Motor Drives and Power Factor Correction.
48V Server and Telecom Power Supplies
Data-center and telecom racks distribute power at 48 V, making the 60 V rating of the IGC019S06S1XTMA1 a natural fit for the primary-side switches of LLC and buck converters. The 1.3 mohm on-state resistance keeps conduction loss low even at tens of amperes, while the GaN technology permits switching frequencies several times higher than silicon MOSFETs, shrinking magnetics and capacitors. Placed in the power stage with a dedicated GaN driver and short gate loops, the device reduces both conversion loss and board area. The 99 A (Tc) capability provides substantial headroom when the exposed pad is soldered to a solid copper pour.
Рекомендуется
USB-PD Fast Chargers and Adapters
High-wattage USB-PD adapters (65 W to 240 W) benefit directly from the IGC019S06S1XTMA1's combination of 60 V rating and 1.3 mohm on-resistance in a 3x5 mm PQFN footprint. GaN switching at hundreds of kHz allows miniature transformers, and the low Rds(on) keeps the adapter cool inside enclosed plastic housings where thermal budget is scarce. Used as the active-clamp flyback or ACF main switch with a suitable controller, the e-mode, normally-off characteristic improves fail-safe behavior if the gate drive is lost. Layout should minimize the power loop to control ringing from the fast dv/dt edges.
Рекомендуется
LLC Resonant Converters
In LLC half-bridge and full-bridge stages, the IGC019S06S1XTMA1 switches under zero-voltage switching, where GaN's zero reverse-recovery charge eliminates the body-diode loss that burdens silicon MOSFETs. The 1.3 mohm on-resistance minimizes the RMS conduction loss of the resonant tank current, and the 60 V rating covers 48 V input buses with margin. Operating at 500 kHz to 1 MHz or above, designers can drastically reduce transformer size. Gate-drive rise times must be matched to the driver strength, and the PG-TSON-6-2 exposed pad must be thermally coupled to the PCB for the 45 W (Tc) capability.
Рекомендуется
High-Frequency DC-DC Buck Converters
Point-of-load and intermediate-bus converters stepping 48 V down to 12 V or lower use the IGC019S06S1XTMA1 as a high-side or synchronous switch. GaN's low gate charge reduces switching loss, allowing multi-hundred-kHz to MHz operation that shrinks the inductor, while 1.3 mohm keeps conduction losses low at 20 A-class loads. Estimated conduction loss at 20 A is about 0.52 W (20 A squared times 1.3 mohm), comfortably within the 3.3 W ambient rating. Dead-time optimization is critical because GaN devices have no intrinsic body diode but conduct in reverse with low voltage drop.
Рекомендуется
Class-D Audio Amplifier Output Stages
High-power Class-D amplifiers gain from the IGC019S06S1XTMA1's fast, clean switching and 1.3 mohm on-resistance, which reduce both switching distortion and IR drop across the output devices. Operating the half-bridge at several hundred kHz pushes residual switching noise far above the audio band, simplifying output filter design, while low on-resistance improves efficiency and reduces heatsinking needs. The normally-off e-mode behavior adds safety if the modulator fails. Careful gate-loop and power-loop layout in the PG-TSON-6-2 footprint suppresses EMI from the very high dv/dt edges characteristic of GaN.
Рекомендуется
Industrial Motor Drives and Power Factor Correction
Compact industrial drives, servo axes, and totem-pole PFC stages operating from rectified 48 V to 60 V rails can deploy the IGC019S06S1XTMA1 as the main switching device. In totem-pole PFC the GaN HEMT's absence of reverse recovery is decisive, enabling continuous-mode operation with far lower loss than silicon superjunction MOSFETs. The 27 A ambient rating and 1.3 mohm on-resistance support kilowatt-class stages with modest cooling. Designers should apply Infineon's GaN layout guidelines, use differential probing for gate verification, and ensure the exposed pad copper area matches the intended 45 W (Tc) thermal path.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IGC019S06S1XTMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IGB019S06S1XTMA1 | IGC019S06S1XTSA1 |
|---|---|---|---|
| Package | PG-TSON-6-2 (PQFN 3x5) | PG-TSON-6-2 (PQFN 3x5) - same | PG-TSON-6-2 (PQFN 3x5) - same |
| Brand | Infineon | Infineon | Infineon |
| Drain-Source Voltage | 60 V | 60 V | 60 V |
| Technology | CoolGaN G3 e-mode GaN HEMT | CoolGaN e-mode GaN HEMT | CoolGaN G3 e-mode GaN HEMT |
| Packaging | Tape & Reel (XTMA1) | Tape & Reel | Tape & Reel, alternate reel qty |
Ключевые отличия
- Very low on-state resistance of 1.3 mohm in a 3x5 mm footprint (против IGB019S06S1XTMA1)
- Normally-off e-mode operation simplifies drive and improves safety (против Depletion-mode GaN alternatives)
- Trade-off: tighter gate-drive tolerances than silicon MOSFETs (против Comparable 60 V silicon MOSFETs)
Заметки по проектированию
GaN devices such as the IGC019S06S1XTMA1 switch in nanoseconds, so power-loop and gate-loop inductance dominate performance. Keep the input decoupling capacitor, the transistor, and (in half-bridge use) the companion switch within the smallest possible area on the top layer, with a tight return on layer 2. Follow Infineon's CoolGaN evaluation-board layout guidance: place the gate driver adjacent to the device, route the gate trace directly, and avoid routing high-dv/dt nodes over other signals. Estimated: even 5 nH of parasitic inductance at a 20 A/ns slew produces ~100 V of ringing, enough to threaten the 60 V rating.
The IGC019S06S1XTMA1 is rated 3.3 W at ambient but 45 W at case temperature, so board copper determines real capability. Solder the exposed pad to at least 1 square inch of 2 oz copper, or use thermal vias (array of 0.3 mm vias at ~1 mm pitch) to inner layers, to approach the 99 A (Tc) rating. Estimated: at 20 A load, conduction loss is 0.52 W (20^2 x 1.3 mohm), before switching loss; include switching loss at your operating frequency for the true dissipation budget.
Do not treat this GaN HEMT like a silicon MOSFET. The e-mode gate has narrow voltage limits specified in the Infineon datasheet - exceeding them destroys the device - so use a dedicated GaN gate driver, not a generic MOSFET driver. There is no avalanche rating and no intrinsic body diode: reverse conduction occurs through the channel at low voltage drop, but designers must manage dead time and voltage clamping differently. Always verify gate-drive levels, source impedance, and dv/dt immunity of level shifters before first power-up.
Информация о соответствии
RoHS compliance per JLCPCB listing. Other environmental statuses require Infineon official product compliance documentation.
