IPT008N06NM5LFATMA1 - 60V 454A 0.8mΩ N-Ch MOSFET HSOF-8 | Infineon
Артикул: IPT008N06NM5LFATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $9.18 | $9,18 |
| 10 | $8.55 | $85,50 |
| 100 | $7.62 | $762,00 |
| 500 | $6.84 | $3.420,00 |
| 1.000 | $6.1 | $6.100,00 |
| 3.000 | $5.4 | $16.200,00 |
IPT008N06NM5LFATMA1 Обзор
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion stages. The N-channel enhancement-mode MOSFET, the most common topology, turns on when a positive gate-source voltage exceeds the threshold (here VGS(th) is in the 3.6 V region) and conducts current from drain to source through a low-resistance channel. Within the broader taxonomy, the IPT008N06NM5LF sits in the discrete semiconductor family: MOSFET -> power MOSFET -> low-voltage (<100 V) trench MOSFET -> OptiMOS 5 -> Infineon linear FET subfamily.
Key electrical strengths include 0.8 mΩ RDS(on) at 10 V VGS, 454 A continuous drain current at 25 °C case, 60 V VDS max rating, and a linear-FET-style SOA that tolerates high current at elevated drain voltages - critical for hot-swap, eFuse, and battery protection. The PG-HSOF-8 package uses a large exposed metal pad for top-side cooling and replaces the traditional wire bonds with a copper clip, dramatically reducing package resistance and inductance.
Typical applications include 48 V hot-swap controllers, server/OR-ing power paths, battery management system (BMS) protection FETs, motor drive H-bridges, and high-current DC-DC converters. The combination of 60 V rating and 0.8 mΩ RDS(on) is especially useful in 12 V/24 V/48 V rails where the linear SOA region must survive large inrush transients without tripping upstream protection.
Design considerations include keeping the gate drive above 10 V for full enhancement, minimizing source-inductance loop area to limit voltage overshoot, and providing adequate PCB copper and thermal vias to extract heat from the top-side cooling pad. This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes beyond the manufacturer datasheet.
Аналоги без доработки для IPT008N06NM5LFATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IPT008N06NM5LFATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID) at Ta.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IPT015N10NF2SATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$3.1 / шт.
Открыть даташит →IPB021N10NM5LF2ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$2.75 / шт.
Открыть даташит →IPT017N12NM6ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.85 / шт.
Открыть даташит →BSC016N06NSTATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.92 / шт.
Открыть даташит →BSC028N06NSTATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.4 / шт.
Открыть даташит →IPT008N06NM5LFATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 5 / Linear FET |
| Тип транзистора | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID, Tc) | 454 A |
| On-Resistance RDS(on) at VGS=10 V | 0.8 mΩ |
| Gate-Source Threshold Voltage VGS(th) | 3.6 V (typ, 250 µA test) |
| Power Dissipation (Tc) | 278 W |
| Диапазон рабочих температур | -55 °C to +175 °C (TJ) |
| Корпус | PG-HSOF-8 (single, flat-lead) |
| Тип монтажа | Surface Mount |
| Gate Drive (recommended) | 10 V (logic-level compatible above 4.5 V VGS) |
| Technology | Trench MOSFET (OptiMOS 5) |
| Уровень MSL | 1 (per JEDEC J-STD-020) |
| Статус RoHS | Compliant |
| REACH Status | Compliant |
| AEC-Q100 | not_qualified (industrial-grade by default) |
Конфигурация выводов IPT008N06NM5LFATMA1
| Контакт 1 | G — Gate |
| Контакт 2 | S — Source (lead-side Kelvin connection) |
| Контакт 3 | S — Source (lead-side) |
| Контакт 4 | S — Source (lead-side) |
| Контакт 5 | S — Source (lead-side) |
| Контакт 6 | S — Source (lead-side) |
| Контакт 7 | S — Source (lead-side) |
| Контакт 8 | D — Drain (top exposed pad, also connected to large bottom pad) |
Область безопасной работы (DC, Tc=25°C)
Типичное применение
IPT008N06NM5LFATMA1 подходит для 6 применениеs: 48 V Hot-Swap and Inrush Control, Battery Management System (BMS) Protection FET, Server and Datacenter OR-ing Power Paths, High-Current DC-DC Buck Converter, Motor Drive H-Bridge (BLDC / Brushed), eFuse and Circuit Protection Modules.
48 V Hot-Swap and Inrush Control
The IPT008N06NM5LFATMA1's 60 V VDS, 454 A ID, and linear-FET SOA are tailored for 48 V hot-swap circuits in telecom and server backplanes. The 0.8 mΩ RDS(on) at 10 V VGS limits steady-state conduction loss to roughly 8 W at 100 A, while the wide linear-FET SOA region lets the device absorb the simultaneous high-VDS / high-ID inrush transient during board insertion without tripping the upstream fuse. Place the FET between the backplane connector and the bulk capacitor; pair with a hot-swap controller such as the LTC4282 or LM5060 that monitors VDS and ramps gate via constant-dI/dt. Compared with a switching-optimized trench MOSFET, the IPT008N06NM5LF gives 3-5x larger safe operating area at 30 V VDS - exactly where the inrush envelope lives.
Рекомендуется
Battery Management System (BMS) Protection FET
In lithium-ion battery packs from 12 V to 48 V nominal, the IPT008N06NM5LFATMA1 serves as either the charge or discharge protection MOSFET. Its 60 V VDS handles 16S LiFePO4 stacks (57 V max) with comfortable margin, and the 0.8 mΩ on-resistance keeps continuous conduction loss to roughly 8 W at 100 A - critical for e-mobility applications where every 100 mΩ of FET resistance reduces range. The linear-FET SOA lets the device ride through short-circuit transients before the BMS controller trips, giving downstream fuses time to clear. Mount on 2 oz copper with a copper clip to the top exposed pad and thermal vias to inner copper layers for sustained 150 A operation.
Рекомендуется
Server and Datacenter OR-ing Power Paths
Redundant 48 V server power shelves commonly use OR-ing MOSFETs to combine feeds from dual power supplies. The IPT008N06NM5LFATMA1's 0.8 mΩ RDS(on) means only 8 W of conduction loss at 100 A per rail, compared with ~25 W for an equivalently-rated D²PAK device. The 60 V VDS rating accommodates 54 V nominal telecom buses, and the HSOF-8 footprint enables dense SMD layouts next to the OR-ing controller. Place the FET in the high-side return path with the source tied to ground; the controller regulates the gate to hold VDS at the threshold for fastest reverse-current blocking.
Рекомендуется
High-Current DC-DC Buck Converter
For 48 V to 12 V point-of-load converters delivering 80-150 A, the IPT008N06NM5LFATMA1 serves as the high-side or low-side switch when paired with a dedicated gate driver. Its 0.8 mΩ RDS(on) keeps high-side conduction loss around 4 W at 50 A (50% duty cycle), and the 60 V VDS withstands ringing transients from 48 V inputs with margin. The HSOF-8 top-side cooling pad allows direct attachment to a heatsink or cold plate, supporting sustained high-current operation. For higher switching frequencies above 200 kHz, evaluate the SOA losses from switching events carefully; the linear-FET SOA tolerates soft-switching transitions well.
Рекомендуется
Motor Drive H-Bridge (BLDC / Brushed)
Battery-powered e-mobility tools and small EVs running on 24 V or 48 V nominal packs benefit from the IPT008N06NM5LFATMA1 in the H-bridge low-side or high-side position. The 0.8 mΩ RDS(on) and 454 A pulsed capability handle peak motor-start currents without paralleling devices, and the 60 V VDS covers 16S Li-ion packs to 57 V fully charged. The HSOF-8 footprint with top exposed pad simplifies mechanical integration into motor housing heat paths. Gate drive at 10 V from a dedicated half-bridge driver (e.g., IRS2004STRPBF or 2ED2106S06FXUMA1) ensures fast switching and avoids shoot-through.
Рекомендуется
eFuse and Circuit Protection Modules
Industrial eFuse modules for 24 V and 48 V factory rails replace mechanical fuses and circuit breakers with the IPT008N06NM5LFATMA1 as the switching element. The linear-FET SOA is exactly what an eFuse needs: ability to hold a controlled current while the controller monitors VDS for fault detection, then either latch off or retry. Compared with mechanical fuses, the eFuse resets in milliseconds and provides telemetry (V, I, T) over I2C or SPI. The 60 V VDS, 0.8 mΩ RDS(on), and PG-HSOF-8 footprint make this part a natural fit for PCB-mount eFuse designs requiring sustained 100-200 A handling.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IPT008N06NM5LFATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IPT015N10NF2SATMA1 | IPB021N10NM5LF2ATMA1 | IPT017N12NM6ATMA1 | BSC016N06NSTATMA1 | BSC028N06NSTATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HSOF-8 (single) | PG-HSOF-8 (single) - same | PG-HSOF-8 (single) - same | PG-HSOF-8 (single) - same | PG-HSOF-8 (single) - same | PG-HSOF-8 (single) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage VDS (V) | 60 | 100 | 100 | 120 | 60 | 60 |
| RDS(on) at VGS=10V (mΩ) | 0.8 | 1.5 | 2.1 | 1.7 | 1.6 | 2.8 |
| Technology | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 5 Linear FET | OptiMOS 5 Trench (switching) | OptiMOS 5 Trench (switching) |
| Optimized For | Linear / hot-swap SOA | Linear / hot-swap SOA | Linear / hot-swap SOA | Linear / hot-swap SOA | Hard-switching | Hard-switching |
Ключевые отличия
- Linear-FET SOA optimized for hot-swap and inrush (против BSC016N06NSTATMA1)
- Lowest RDS(on) in the 60 V linear-FET family (против IPT015N10NF2SATMA1)
- Same HSOF-8 single footprint as 100 V/120 V alternatives (против IPT017N12NM6ATMA1)
Заметки по проектированию
The PG-HSOF-8 single-die package uses a top-side exposed metal pad for cooling, and the datasheet specifies 278 W power dissipation at Tc = 25 °C. To approach this rating, designers must (a) solder the top pad to a copper heatsink or PCB copper pour via thermal interface material, and (b) place thermal vias under the bottom exposed pad to inner copper layers. Without the top-side connection, sustained current must be derated to roughly 30-40% of the 454 A spec. Estimate: at 100 A continuous with 0.8 mΩ RDS(on), conduction loss is I² × RDS = 100² × 0.0008 = 8 W, requiring roughly 6-8 cm² of 2 oz copper to keep junction rise under 50 °C.
PG-HSOF-8 land pattern: follow Infineon's recommended footprint (typically 5.0 × 6.0 mm with 0.8 mm pitch leads) and use NSMD pads for solder-joint reliability. The bottom exposed pad must have thermal vias - recommend 9-16 vias of 0.3 mm drill, 0.6 mm pad, plugged or tented to prevent solder wicking. Source inductance is dominated by the lead-side source pads (pins 2-7 are all source); connect the gate driver return directly to pin 2 (closest to gate) for a true Kelvin connection that prevents source-inductance-induced turn-off transients.
Do not assume 454 A is achievable in real designs - that number is at Tc=25 °C, meaning the case is held at 25 °C. In an SMD design, board temperature typically reaches 80-100 °C, derating ID to roughly 30% (≈150 A). The 0.8 mΩ RDS(on) is at VGS=10 V; driving at 4.5 V (logic level) typically yields 1.5-2x higher RDS(on). For linear-FET applications, always verify the inrush point lies within the SOA curve at your worst-case VDS, not just within the rated VDS - linear-FET SOA shrinks rapidly above 30 V VDS.
Информация о соответствии
RoHS and REACH compliance per Infineon product page. Industrial-grade by default; AEC-Q100 grade not offered. Halogen-free per JEDEC JS709.
