IPT017N12NM6ATMA1 - 120V 331A OptiMOS 6 N-MOSFET | Infineon
MPN: IPT017N12NM6ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.41 | $1,205.00 |
| 1,000 | $2.07 | $2,070.00 |
| 5,000 | $1.85 | $9,250.00 |
Drop-in alternatives for IPT017N12NM6ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IPT017N12NM6
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IPTG025N15NM6ATMA1
✅ Drop-In✓ In Stock
$1.52 / Unit
View Datasheet →ISK057N04LM6ATSA1
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$0.3 / Unit
View Datasheet →ISZ019N03L5SATMA1
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →NTMFS5C604NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
IPT017N12NM6ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IPT017N12NM6ATMA1 |
| Technology | OptiMOS 6 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) at Ta | 29 A |
| Continuous Drain Current (ID) at Tc | 331 A |
| On-Resistance RDS(on) max | 1.7 mOhm |
| Power Dissipation at Ta | 3 W |
| Power Dissipation at Tc | 395 W |
| Package | PG-HSOF-8 (TOLL) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55C to +175C |
| Pin Count | 8 + tab |
| Packaging | Tape & Reel |
| RoHS Status | Compliant |
IPT017N12NM6ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (low-side) |
| Pin 2 | Source — Source connection (low-side) |
| Pin 3 | Source — Source connection (low-side) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection (low-side) |
| Pin 6 | Source — Source connection (low-side) |
| Pin 7 | Source — Source connection (low-side) |
| Pin 8 | Source — Source connection (low-side) |
| Pin Tab | Drain — Drain connection (exposed tab, heatsink) |
Safe Operating Area (DC)
Typical Applications
IPT017N12NM6ATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectification, Hot-Swap and OR-ing Controllers, Battery Protection and BMS, Industrial Motor Drive Stages, Solar Inverter DC-DC Stage, Server and Datacenter Power Distribution, USB-PD and High-Power Charging.
48V Telecom Synchronous Rectification
The IPT017N12NM6ATMA1 serves as the synchronous rectifier FET in 48V-input isolated DC-DC converters for telecom and datacom equipment. Its 1.7 mOhm RDS(on) and 120V VDS rating provide ample margin above the 80V transient envelope of nominal 48V buses, while the TOLL package's source-down thermal path dissipates conduction losses directly into PCB copper. Compared to a Schottky diode replacement, the IPT017N12NM6 reduces rectifier losses by 50-70% at full load, improving system efficiency above 96% in 48V-to-12V LLC topologies. The 331A TC-rated current supports 1000W+ converter stages in a single FET per phase.
Recommended
Hot-Swap and OR-ing Controllers
The IPT017N12NM6ATMA1 functions as the main pass-FET in 48V hot-swap and OR-ing modules where its 1.7 mOhm RDS(on) minimizes insertion loss during steady-state operation. The 120V rating provides 50% voltage headroom above the nominal 48V, withstanding inductive transients during hot-plug events. Its 331A continuous current handles 1.5kW+ OR-ing applications per device. Designers should program the gate ramp rate via external RC to control inrush current and SOA stress; the low Qg of OptiMOS 6 technology enables sub-millisecond turn-on without external gate drivers in low-frequency applications.
Recommended
Battery Protection and BMS
In battery management systems for e-mobility and industrial battery packs, the IPT017N12NM6ATMA1 provides the high-side disconnect switch that isolates the pack from the load during fault conditions. Its 1.7 mOhm RDS(on) minimizes continuous conduction loss during normal operation, preserving battery runtime. The 120V rating accommodates 96V lithium-iron-phosphate packs with margin for transient overvoltages during regenerative braking. The 175C junction rating supports underhood automotive environments, while the small TOLL footprint enables compact battery pack designs. Designers should include a TVS clamp across drain-source to clamp avalanche energy during disconnect events.
Recommended
Industrial Motor Drive Stages
The IPT017N12NM6ATMA1 operates in the H-bridge switching stage of three-phase industrial motor drives for robotics and factory automation. Its low Qg and Qrr reduce switching losses at 20-50 kHz PWM frequencies, allowing smaller heatsinks in space-constrained drives. The 120V VDS rating handles 80V DC bus motors with significant transient margin. The TOLL package's low thermal resistance supports continuous high-current operation in servo amplifiers. Designers should pair the FET with isolated gate drivers like the 2ED2108S06FXUMA1 to provide 4A peak gate drive for fast switching transitions.
Recommended
Solar Inverter DC-DC Stage
In solar microinverters and DC-DC optimizers, the IPT017N12NM6ATMA1 handles the high-side switching function in boost or buck-boost power stages converting 40-80V panel voltages. Its 120V VDS rating provides 50% margin above open-circuit panel voltages in cold conditions. The 1.7 mOhm RDS(on) keeps conduction losses low, critical for maximizing energy harvest efficiency in MPPT converters. The TOLL package withstands the thermal cycling of outdoor solar installations while maintaining solder joint reliability. Designers should validate the SOA at peak power point and ensure the gate driver provides adequate UVLO protection during cold-start conditions.
Recommended
Server and Datacenter Power Distribution
In 48V-to-POL converter intermediate bus architectures powering AI accelerator cards and CPUs, the IPT017N12NM6ATMA1 functions as the primary-side switch in 1-2kW isolated DC-DC bricks. Its 1.7 mOhm RDS(on) and OptiMOS 6 figure-of-merit minimize both conduction and switching losses at 100-200 kHz switching frequencies. The 120V rating accommodates 48V nominal buses with 100V transient envelope. The compact TOLL footprint enables high power density designs exceeding 100W per cubic inch. Designers should use LLC or phase-shift topologies to leverage the low Qrr characteristic for zero-voltage-switching operation at light load.
Recommended
USB-PD and High-Power Charging
The IPT017N12NM6ATMA1 implements the high-current path in USB-PD 3.1 EPR chargers delivering 240W at 28V/36V/48V output voltages. Its 1.7 mOhm RDS(on) minimizes voltage drop across the FET, preserving tight output voltage regulation under dynamic load steps. The 120V rating supports 48V EPR outputs with substantial transient margin. The TOLL package's small footprint enables compact charger designs. Designers should implement synchronous rectification on the secondary side with paired low-voltage FETs like the ISZ019N03L5SATMA1, and use a PFC + LLC topology for highest efficiency at universal mains input.
Recommended
Recommended Products Summary
Engineering reference data for IPT017N12NM6ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPT017N12NM6 | IPTG025N15NM6ATMA1 | ISK057N04LM6ATSA1 | ISZ019N03L5SATMA1 | NTMFS5C604NLT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) | PG-HSOF-8 (TOLL) |
| Drain-Source Voltage (VDS) | 120 V | 120 V | 150 V | 40 V | 30 V | 120 V |
| RDS(on) max at VGS=10V | 1.7 mOhm | 1.7 mOhm | 2.5 mOhm | 0.57 mOhm | 1.9 mOhm | 5.2 mOhm |
| Continuous Drain Current (Tc) | 331 A | 331 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | onsemi PowerTrench |
| Power Dissipation (Tc) | 395 W | 395 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Temperature Range | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Key Differentiators
- Lowest RDS(on) in 120V TOLL class (vs NTMFS5C604NLT1G)
- OptiMOS 6 latest-generation process (vs ISZ019N03L5SATMA1)
- 120V rating with TOLL thermal performance (vs IPTG025N15NM6ATMA1)
Design Notes
The PG-HSOF-8 (TOLL) package achieves low thermal resistance by exposing the source pad to PCB copper. For the IPT017N12NM6ATMA1 to deliver its rated 331A at TC=25C, the PCB must provide substantial copper thermal spreading - typically 100 mm squared of 2 oz copper minimum, with thermal vias to inner layers. Estimated: at 331A continuous with 1.7 mOhm RDS(on), conduction losses reach approximately 186W, requiring significant forced-air cooling or liquid cooling in practical applications. Without adequate cooling, derate to 100A or less.
The TOLL package requires careful PCB layout to maximize thermal and electrical performance. Place the device directly over a continuous copper pour on the top layer, with thermal vias (0.3mm drill, 1mm pitch) connecting to inner copper planes. Keep the gate trace short and use a gate-source resistor (typically 10-100 kOhm) to prevent accidental turn-on from dv/dt. The source pads (pins 1-3, 5-8) should be connected to a wide copper region to handle high current. Avoid routing sensitive analog signals beneath the device.
Common pitfalls when designing with the IPT017N12NM6ATMA1 include: (1) exceeding VGS maximum of +/-20V by using inadequately clamped gate drivers; (2) ignoring avalanche energy during turn-off in hard-switched topologies, which can destroy the FET without external TVS clamping; (3) underestimating gate driver peak current requirement - the Qg figure must be divided by the desired rise time to compute required drive current. For example, a 50ns rise time with 100nC Qg requires 2A peak gate current. Use a dedicated gate driver IC rather than logic-level GPIO.
Power loop inductance is critical in high-frequency switching applications using the IPT017N12NM6ATMA1. Minimize the loop area between drain, FET, and decoupling capacitor by placing the input capacitor within 5mm of the drain tab. Use parallel ceramic capacitors (10uF X7R + 1uF X7R + 100nF NP0) for broadband decoupling. For switching frequencies above 100 kHz, consider using an external snubber or optimizing the gate drive strength to control ringing. Estimated: each nH of loop inductance adds approximately 20V of overshoot at 100A turn-off in 10ns.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q100, consult Infineon for automotive-grade OptiMOS 6 part numbers. Halogen-free per JEDEC JS709B standard.
