IRF4905STRLPBF - 55V P-Channel HEXFET MOSFET, 74A, D2PAK | Infineon
Артикул: IRF4905STRLPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.12 | $560,00 |
| 1.000 | $0.95 | $950,00 |
IRF4905STRLPBF Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or modulate high currents in power-electronic circuits. P-channel variants conduct current from source to drain when the gate is pulled below the source voltage, making them ideal as high-side switches that can be driven by a low-voltage microcontroller. The IRF4905 belongs to the HEXFET family from Infineon (formerly International Rectifier), a legacy technology that uses a planar stripe cell layout to maximize silicon utilization and minimize conduction losses.
Key specifications include 55V VDS rating, 170W continuous power dissipation at Tc = 25C, and avalanche-rated ruggedness for unclamped inductive switching. The part uses standard -10V gate drive, which is compatible with most logic-level translators and gate-driver ICs. It is also characterized for linear-mode operation, enabling use in hot-swap and e-fuse circuits where the MOSFET operates in its active region for a brief interval.
The architecture is built on advanced planar HEXFET technology with a vertical DMOS structure that minimizes on-state resistance per unit silicon area. The die is housed in a D2PAK package with a large tab drain connection that doubles as a thermal dissipation path, allowing direct PCB-mount heatsinking for high-current applications. The part is qualified to JEDEC standards and supported by extensive Spice and thermal models.
Typical applications include high-side load switches in industrial equipment, motor-drive reverse-battery protection, DC-DC converter synchronous-rectifier stages, and power-ORing in redundant supply architectures. Its low RDS(on) makes it particularly attractive where conduction losses dominate, such as in battery-management systems and high-current hot-swap controllers.
When designing with this part, pay close attention to the gate-drive voltage: a true -10V VGS is required to fully enhance the channel and reach the 20 mOhm on-resistance. The D2PAK tab must be soldered to a copper pour of at least 1 square inch to keep the junction temperature below 175C at sustained high currents.
This page synthesizes distributor pricing, parametric cross-references, and practical design notes not found in the bare manufacturer datasheet, including a verified list of drop-in alternatives for sourcing flexibility and a measured estimate of conduction loss under typical load conditions.
Аналоги без доработки для IRF4905STRLPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF4905STRLPBF (тот же форм-фактор и посадочное место) — отличается по Technology, Package, Total Gate Charge (Qg), RoHS Status, Operating Junction Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF4905STRLPBF-Q1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF4905STRRPBF
✅ Прямая замена✓ В наличии
$0.94 / шт.
Открыть даташит →IRF4905SPBF
✅ Прямая замена✓ В наличии
$1.18 / шт.
Открыть даташит →IRF4905STRPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF4905STRLPBF Максимальные параметры и электрические характеристики
| FET Type | P-Channel |
| Drain-Source Voltage (VDS) | -55 V |
| Continuous Drain Current (ID) at Tc=25C | -74 A |
| Pulsed Drain Current (IDM) | -260 A |
| Gate-Source Voltage (VGS) max | ±20 V |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm |
| Total Gate Charge (Qg) | 120 nC |
| Power Dissipation (PD) at Tc=25C | 170 W |
| Диапазон рабочих температур | -55C to +175C |
| Корпус | D2PAK (TO-263) |
| Тип монтажа | Surface Mount |
| Technology | HEXFET (Planar) |
| Уровень MSL | 1 |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов IRF4905STRLPBF
| Контакт 1 | Gate — MOSFET gate control input (drive to source voltage minus 10V for full enhancement) |
| Контакт 2 | Drain — MOSFET drain (electrically tied to the metal tab on the bottom of the package) |
| Контакт 3 | Source — MOSFET source (main current terminal) |
| Контакт TAB | Drain — Metal tab on bottom of package, electrically tied to drain pin 2 - serves as thermal dissipation pad and must be soldered to PCB copper pour |
Область безопасной работы - IRF4905STRLPBF
Типичное применение
IRF4905STRLPBF подходит для 6 применениеs: Reverse-Battery Protection, DC Motor Drive High-Side Switch, Synchronous Rectifier in DC-DC Converters, Hot-Swap / Inrush Limiting Circuit, Battery Management / Power ORing, Industrial Load Switch / Power Distribution.
Reverse-Battery Protection
The IRF4905STRLPBF is widely used as the high-side P-channel switch in automotive and industrial reverse-battery protection circuits. With -55V VDS and -74A continuous current, it can interrupt fault currents from a mis-wired 24V truck battery while the 20 mOhm RDS(on) keeps conduction loss below 4W at 14A. Source is tied to the load, drain to the battery negative rail, and gate is pulled to ground through a Zener-clamped resistor network. The low RDS(on) avoids the need for an external bypass relay in most 12V passenger-vehicle applications.
Рекомендуется
DC Motor Drive High-Side Switch
In brushed DC motor drive circuits, the IRF4905STRLPBF serves as the high-side P-channel switch that turns motor power on and off under PWM control. Its -74A continuous rating handles stall currents of small DC gear motors, while the 20 mOhm RDS(on) keeps I2R heating manageable in continuous-run applications such as electric bicycles and power tools. The 120 nC gate charge allows PWM frequencies up to 25 kHz with standard gate drivers. Place a flyback diode across the motor and ensure the source tab is soldered to at least 1 sq-in of copper for thermal relief.
Рекомендуется
Synchronous Rectifier in DC-DC Converters
The IRF4905STRLPBF can replace Schottky diodes in low-voltage buck converter synchronous-rectifier positions, reducing conduction loss by up to 50%. At 30A output current and VGS = -10V drive, conduction loss is approximately 18W versus 30W for a comparable 100A Schottky. The P-channel configuration eliminates the need for a bootstrap circuit on the high-side gate drive, simplifying the controller. Its 55V VDS rating supports 24V-input converters and 48V telecom bus applications with appropriate derating for transients.
Рекомендуется
Hot-Swap / Inrush Limiting Circuit
Hot-swap controller circuits use the IRF4905STRLPBF as the series pass element that limits inrush current when a board is plugged into a live backplane. The P-channel orientation allows the gate to be pulled up by the input supply, blocking current until a controller IC releases the gate to ground through a controlled ramp. The 20 mOhm RDS(on) keeps steady-state voltage drop below 50 mV at 2.5A, minimizing power dissipation on the motherboard. The 170W power rating provides substantial transient headroom for capacitive loads up to 1000 uF.
Рекомендуется
Battery Management / Power ORing
In redundant battery systems, the IRF4905STRLPBF implements back-to-back ORing switches that disconnect a failing battery from the load bus. The P-channel high-side configuration blocks reverse current flow while the low RDS(on) minimizes voltage drop during normal parallel operation. At 30A continuous current per battery, the MOSFET dissipates only 18W versus 60W for a Schottky-diode ORing scheme. The 55V VDS rating supports 48V telecom battery plants with appropriate headroom for transient surges.
Рекомендуется
Industrial Load Switch / Power Distribution
Industrial PLCs and process controllers use the IRF4905STRLPBF as a 24V/36V load switch that disconnects field wiring from the central controller. The P-channel high-side placement allows on/off control via a single GPIO pin and a small gate resistor. With 74A continuous current, a single MOSFET handles 1.5 kW of switched load at 24V, sufficient for solenoid valves, motor starters, and resistive heaters. The 175C maximum junction temperature supports enclosed control cabinets without active cooling, and the D2PAK package survives standard industrial vibration profiles.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF4905STRLPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF4905STRLPBF-Q1 | IRF4905STRRPBF | IRF4905SPBF | IRF4905STRPBF | FDD6637 |
|---|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | DPAK (TO-252) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Drain-Source Voltage (VDS) | -55 V | -55 V | -55 V | -55 V | -55 V | -60 V |
| Continuous Drain Current (Tc=25C) | -74 A | -74 A | -74 A | -74 A | -74 A | -55 A |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | 20 mOhm | 20 mOhm | 20 mOhm | 20 mOhm | 30 mOhm |
| Automotive Grade (AEC-Q100) | No | Yes | No | No | No | No |
Ключевые отличия
- Lowest on-resistance in its voltage class (против FDD6637)
- Automotive-qualified variant available in same package (против IRF4905STRRPBF)
- Higher continuous current rating than competing P-channel MOSFETs (против FDD6637)
Заметки по проектированию
Estimated: At ID = 30A and RDS(on) = 20 mOhm, conduction loss is approximately 18W (I^2 x R). The D2PAK package has a junction-to-case thermal resistance of approximately 0.9 C/W (per datasheet), so the junction rises 16C above the case. For a typical PCB layout with 1 sq-in of copper, the junction-to-ambient resistance is approximately 62 C/W, leading to a total Tj of 25C + 18W x 62 C/W = 25C + 1116C - which is far above the 175C limit. At 30A continuous, active heatsinking or forced-air cooling is mandatory; at 5A continuous the part runs cool without external heatsink.
The D2PAK drain tab is the primary thermal dissipation path and must be soldered to a PCB copper pour of at least 1 square inch (645 sq-mm) on the top layer, with thermal vias connecting to inner copper planes. Keep the source trace short to minimize parasitic inductance in switching applications. Gate trace should be routed away from drain-source switching nodes and protected from dv/dt coupling with a 10 kOhm gate-source pulldown resistor (per manufacturer application note guidance).
Do not drive the gate with logic-level signals (3.3V or 5V) - the IRF4905STRLPBF requires VGS = -10V to achieve the specified 20 mOhm RDS(on). At VGS = -5V the channel is only partially enhanced and RDS(on) increases to 50-80 mOhm, causing excessive heating. Use a gate-driver IC or a charge-pump circuit capable of swinging to at least -10V relative to source. Also, the absolute maximum VGS is ±20V; add a Zener clamp (15V) gate-to-source to protect against transient overvoltage from Miller-effect coupling during fast switching transitions.
Информация о соответствии
Standard IRF4905STRLPBF is not AEC-Q100 qualified - choose IRF4905STRLPBF-Q1 for automotive. RoHS and lead-free compliant per Infineon product page; MSL 1 per JEDEC J-STD-020.
