IRF9530NPBF - -100V P-Channel HEXFET MOSFET, 14A, TO-220AB | Infineon
Артикул: IRF9530NPBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.45 | $1,45 |
| 10 | $1.18 | $11,80 |
| 100 | $0.92 | $92,00 |
| 500 | $0.78 | $390,00 |
| 1.000 | $0.65 | $650,00 |
IRF9530NPBF Обзор
A P-Channel MOSFET is a voltage-controlled majority-carrier device in which the conductive channel is formed by holes (positive carriers) when a negative gate-source voltage is applied. P-Channel devices simplify high-side switching topologies because the source can sit at the load's positive rail and the MOSFET can be turned on by pulling the gate toward ground. In the broader taxonomy, the IRF9530NPBF sits within: HEXFET -> power MOSFET -> MOSFET -> discrete semiconductor -> transistor -> semiconductor device.
Key features of the IRF9530NPBF include a dynamic dV/dt rating, repetitive avalanche rating, 175°C maximum operating junction temperature, easy paralleling thanks to a positive temperature coefficient on resistance, simple drive requirements, and fast switching speed. The TO-220AB package provides a universally preferred mechanical form factor for commercial-industrial power dissipation up to approximately 50W, and the through-hole mounting style supports robust mechanical attachment to heatsinks via the central tab.
The Fifth Generation HEXFET cell architecture reduces both on-resistance and gate charge simultaneously, yielding lower conduction and switching losses than legacy generations. Combined with the ruggedized body diode and avalanche-rated construction, the IRF9530NPBF is engineered for reliable operation in harsh switching environments where dv/dt transients, unclamped inductive switching, and thermal cycling are routine.
Typical applications include high-side load switching, DC motor direction control (H-bridge complement to N-Channel devices such as IRF540N/IRFZ48N), power inverters, solenoid and relay drivers, battery protection and polarity reversal protection, switching power supply start-up circuits, and audio amplifier output stages.
When designing with the IRF9530NPBF, ensure the gate drive can pull the source at least -10V below the gate for full enhancement; logic-level microcontrollers typically require a charge pump or gate-driver stage. The repetitive avalanche rating requires an external snubber or clamping strategy when switching inductive loads such as motors or solenoids.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, structured for engineer-to-engineer reference.
Аналоги без доработки для IRF9530NPBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRF9530NPBF (тот же форм-фактор и посадочное место) — отличается по Package, Total Gate Charge (Qg), Mounting Type, Drain-Source Voltage (VDS), On-Resistance RDS(on) max @ VGS=-10V.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRF9530NSTRLPBF
✅ Прямая замена✓ В наличии
$0.65 / шт.
Открыть даташит →IRF9530PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF9530N
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF9530
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRF4905SPBF
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.18 / шт.
Открыть даташит →IRFR5305PBF
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IRF9530NPBF Максимальные параметры и электрические характеристики
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25°C | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ |
| Total Gate Charge (Qg) typ | 38.7 nC |
| Maximum Power Dissition at TC=25°C | 79 W |
| Рабочая температура перехода | -55°C to +175°C |
| Корпус | TO-220AB (through-hole) |
| Тип монтажа | Through Hole |
| Avalanche Rating | Repetitive avalanche rated |
| dv/dt Rating | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant |
Конфигурация выводов IRF9530NPBF
| Контакт 1 | Gate — Gate control input (drive to ~10V below source to fully enhance) |
| Контакт 2 | Drain — Drain terminal (connects to load/lower-voltage side) |
| Контакт 3 | Source — Source terminal (connects to positive supply rail for high-side P-Channel use) |
Область безопасной работы (DC, TC=25°C)
Типичное применение
IRF9530NPBF подходит для 6 применениеs: High-Side Load Switching, DC Motor H-Bridge Direction Control, Battery Polarity Reversal Protection, Switching Power Supply Start-Up Circuit, Solenoid and Relay Driver, Audio Amplifier Output Stage.
High-Side Load Switching
The IRF9530NPBF is well suited for high-side load switching because its P-Channel polarity places the source at the positive load rail and allows the gate to be pulled to ground for turn-on, eliminating the need for a charge pump or bootstrap driver. With -100V VDS and -14A ID, it can switch 12V, 24V, and 48V loads such as solenoids, lamps, heaters, and motor windings. The 200 mΩ on-resistance at VGS = -10V keeps conduction losses manageable: at 5A continuous load, dissipation is roughly 5W, which the TO-220AB package can handle with a modest clip-on heatsink. The repetitive avalanche rating protects against the inductive kickback generated when switching off a solenoid or relay coil. For logic-level microcontrollers that output 0-3.3V or 0-5V, add a simple gate-driver BJT pair or pull-up network to achieve the full -10V VGS enhancement.
Рекомендуется
DC Motor H-Bridge Direction Control
In a brushed DC motor H-bridge, the IRF9530NPBF serves as the high-side P-Channel pair while an N-Channel device such as IRF540N or IRFZ48N forms the low-side pair. This complementary pairing allows simple ground-referenced gate drive for the low-side N-Channel FETs and straightforward gate-pull-to-ground control for the high-side P-Channel FETs. With -14A continuous current rating, the IRF9530NPBF covers small brushed DC motors under 10A, and its repetitive avalanche rating handles the inductive kick during PWM commutation. The 79W power dissipation capability and 175°C junction temperature rating provide substantial thermal margin for stalled-rotor or locked-rotor fault conditions. Add flyback diodes across the motor terminals for additional protection against commutator-generated voltage spikes beyond the avalanche rating.
Рекомендуется
Battery Polarity Reversal Protection
The IRF9530NPBF makes an excellent reverse-battery protection switch when wired as a high-side P-Channel device between the battery positive terminal and the load. Under correct polarity, a pull-down resistor on the gate turns the MOSFET on with minimal voltage drop (5A load drops about 1V across 200 mΩ); under reverse polarity, the body diode blocks and the gate-source voltage reverses, keeping the MOSFET off and protecting downstream circuitry. This is preferred over a Schottky diode solution because the MOSFET dissipates only I²R rather than I×VF, reducing losses by an order of magnitude. The -100V VDS rating provides ample margin for 12V, 24V, and 48V battery systems including load-dump transients on automotive 24V trucks. Continuous drain current capability of -14A covers most portable and industrial battery packs.
Рекомендуется
Switching Power Supply Start-Up Circuit
In linear-mode start-up auxiliary circuits for AC-DC and DC-DC converters, the IRF9530NPBF can serve as a high-side pass element that supplies initial bias current to the controller IC before the main converter winding takes over. Its -100V VDS rating makes it suitable for 400V-bus PFC front-end auxiliary rails as well as 24V and 48V telecom buses. The 200 mΩ RDS(on) keeps dissipation low at the typical 5-20 mA start-up current, eliminating the need for a heatsink in most designs. Its positive temperature coefficient on resistance simplifies parallel operation when higher start-up currents are required. Once the main converter is running, the auxiliary supply is typically disabled by a small signal transistor to cut quiescent loss.
Рекомендуется
Solenoid and Relay Driver
Industrial solenoid and relay coils require a high-side switch capable of handling the coil's inductive kickback. The IRF9530NPBF's repetitive avalanche rating absorbs the inductive energy when the coil is de-energized, eliminating the need for an external flyback diode in many low-energy applications. With -14A continuous current and -100V blocking voltage, it can drive 12V and 24V solenoids up to several amps continuous duty. The TO-220AB package mounts directly to a chassis or DIN-rail heatsink for thermal management in enclosed industrial cabinets. For high-energy solenoids above the single-pulse avalanche rating, add an external TVS or transzorb clamp across the coil.
Рекомендуется
Audio Amplifier Output Stage
Class-A and Class-AB audio amplifier output stages historically used complementary P-Channel and N-Channel MOSFET pairs in TO-220 packages, with the IRF9530NPBF (or its predecessor IRF9530) as the P-Channel half paired with an N-Channel such as IRF540N. The advantage of MOSFET output stages over bipolar transistors is the absence of thermal runaway and the square-law transfer characteristic that reduces crossover distortion. The IRF9530NPBF's 200 mΩ on-resistance yields modest voltage drop at audio current levels, and the 175°C junction temperature rating supports the high dissipation of Class-A biasing. Its parallel-friendly positive temperature coefficient allows multiple output devices to share current without external ballasting resistors. Modern designs increasingly use dedicated audio MOSFETs, but the IRF9530NPBF remains a viable choice for DIY and repair applications.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRF9530NPBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRF9530NSTRLPBF | IRF9530PBF | IRF9530N | IRF9530 | IRF4905SPBF | IRFR5305PBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay | Infineon | Infineon |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same (DPAK variant is NOT drop-in) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage VDS | -100 V | -100 V | -100 V | -100 V | -100 V | -55 V | -55 V |
| Continuous Drain Current ID | -14 A | -14 A | -12 A | -14 A | -12 A | -74 A | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | 200 mΩ | 300 mΩ | 200 mΩ | 300 mΩ | 20 mΩ | 40 mΩ |
| Power Dissipation at TC=25°C | 79 W | 79 W | 60 W | 79 W | 60 W | 200 W | 110 W |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) | Yes | No (SnPb plated) | Yes | Yes (PBF suffix) | Yes (PBF suffix) |
Ключевые отличия
- Fifth Generation HEXFET cell architecture achieves extremely low RDS(on) per silicon area (против IRF9530 (Vishay third-generation))
- Repetitive avalanche rated for unclamped inductive switching (против IRFR5305PBF (lower-voltage -55V P-Channel))
- Higher voltage margin for 48V and 80V bus applications (против IRF4905SPBF (-55V VDS))
Заметки по проектированию
Estimated: At TC=25°C the IRF9530NPBF dissipates up to 79W, but at TC=100°C this drops to approximately 47W (linear derating from 25°C to 175°C). For a TO-220AB with θJC ≈ 1.5°C/W and a typical clip-on heatsink of θSA ≈ 15°C/W, total θJA is roughly 16.5°C/W. At 5A continuous load with RDS(on) = 200 mΩ at 25°C (use 1.5x = 300 mΩ at 100°C), conduction dissipation is 5A² × 0.30Ω = 7.5W, yielding a junction-to-ambient temperature rise of 7.5W × 16.5°C/W = 124°C above ambient. Mount the heatsink with thermal compound and ensure a minimum of 1 m/s airflow for sustained high-current operation.
For through-hole TO-220AB mounting, drill pad holes at 1.0 mm (0.04 in) diameter for the leads and a 3.6 mm hole for the mounting tab screw. Use a star washer or split-ring lock washer to maintain thermal compound pressure over thermal cycling. Route the gate trace away from the drain trace to minimize capacitive coupling that can cause dv/dt-induced turn-on; keep the gate-source loop area as small as possible and place a 10 kΩ to 100 kΩ gate-source resistor close to the gate pin to dampen parasitic oscillations.
Do not assume the IRF9530NPBF will fully enhance with a 3.3V or 5V microcontroller GPIO - the gate threshold VGS(th) is typically -2V to -4V, but full enhancement to achieve the datasheet 200 mΩ RDS(on) requires VGS = -10V. Use a simple low-side NPN + pull-up resistor network, or a dedicated gate driver such as IR2127SPBF or IFX9201SGAUMA1. Also avoid exceeding the single-pulse avalanche energy (EAS) when switching unclamped inductive loads - either add a flyback diode or TVS clamp, or choose a part with higher avalanche rating. Finally, do not parallel IRF9530NPBF devices without gate-source resistors on each part; while the positive tempco helps, individual gate-source capacitance mismatch can cause high-frequency oscillation.
Информация о соответствии
RoHS compliant per the PBF suffix designation. The non-PBF IRF9530N variant is SnPb-plated and NOT RoHS compliant. AEC-Q100 not applicable - automotive designs should select an AEC-Q100-qualified P-Channel MOSFET instead.
