IRF9530NPBF - -100V P-Channel HEXFET MOSFET, 14A, TO-220AB | Infineon
MPN: IRF9530NPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.65 | $650.00 |
Drop-in alternatives for IRF9530NPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF9530NSTRLPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF9530PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF9530N
✅ Drop-In📋 Reference alternative (not in catalog)
IRF9530
✅ Drop-In📋 Reference alternative (not in catalog)
IRF4905SPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.18 / Unit
View Datasheet →IRFR5305PBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF9530NPBF Maximum Ratings & Electrical Characteristics
| Polarity | P-Channel |
| Drain-Source Voltage (VDS) | -100 V |
| Continuous Drain Current (ID) at TC=25°C | -14 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ |
| Total Gate Charge (Qg) typ | 38.7 nC |
| Maximum Power Dissition at TC=25°C | 79 W |
| Operating Junction Temperature | -55°C to +175°C |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Avalanche Rating | Repetitive avalanche rated |
| dv/dt Rating | Dynamic dV/dt rated |
| Lead-Free / RoHS Status | Lead-Free (PBF suffix), RoHS compliant |
IRF9530NPBF Pin Configuration
| Pin 1 | Gate — Gate control input (drive to ~10V below source to fully enhance) |
| Pin 2 | Drain — Drain terminal (connects to load/lower-voltage side) |
| Pin 3 | Source — Source terminal (connects to positive supply rail for high-side P-Channel use) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IRF9530NPBF is suitable for 6 applications: High-Side Load Switching, DC Motor H-Bridge Direction Control, Battery Polarity Reversal Protection, Switching Power Supply Start-Up Circuit, Solenoid and Relay Driver, Audio Amplifier Output Stage.
High-Side Load Switching
The IRF9530NPBF is well suited for high-side load switching because its P-Channel polarity places the source at the positive load rail and allows the gate to be pulled to ground for turn-on, eliminating the need for a charge pump or bootstrap driver. With -100V VDS and -14A ID, it can switch 12V, 24V, and 48V loads such as solenoids, lamps, heaters, and motor windings. The 200 mΩ on-resistance at VGS = -10V keeps conduction losses manageable: at 5A continuous load, dissipation is roughly 5W, which the TO-220AB package can handle with a modest clip-on heatsink. The repetitive avalanche rating protects against the inductive kickback generated when switching off a solenoid or relay coil. For logic-level microcontrollers that output 0-3.3V or 0-5V, add a simple gate-driver BJT pair or pull-up network to achieve the full -10V VGS enhancement.
Recommended
DC Motor H-Bridge Direction Control
In a brushed DC motor H-bridge, the IRF9530NPBF serves as the high-side P-Channel pair while an N-Channel device such as IRF540N or IRFZ48N forms the low-side pair. This complementary pairing allows simple ground-referenced gate drive for the low-side N-Channel FETs and straightforward gate-pull-to-ground control for the high-side P-Channel FETs. With -14A continuous current rating, the IRF9530NPBF covers small brushed DC motors under 10A, and its repetitive avalanche rating handles the inductive kick during PWM commutation. The 79W power dissipation capability and 175°C junction temperature rating provide substantial thermal margin for stalled-rotor or locked-rotor fault conditions. Add flyback diodes across the motor terminals for additional protection against commutator-generated voltage spikes beyond the avalanche rating.
Recommended
Battery Polarity Reversal Protection
The IRF9530NPBF makes an excellent reverse-battery protection switch when wired as a high-side P-Channel device between the battery positive terminal and the load. Under correct polarity, a pull-down resistor on the gate turns the MOSFET on with minimal voltage drop (5A load drops about 1V across 200 mΩ); under reverse polarity, the body diode blocks and the gate-source voltage reverses, keeping the MOSFET off and protecting downstream circuitry. This is preferred over a Schottky diode solution because the MOSFET dissipates only I²R rather than I×VF, reducing losses by an order of magnitude. The -100V VDS rating provides ample margin for 12V, 24V, and 48V battery systems including load-dump transients on automotive 24V trucks. Continuous drain current capability of -14A covers most portable and industrial battery packs.
Recommended
Switching Power Supply Start-Up Circuit
In linear-mode start-up auxiliary circuits for AC-DC and DC-DC converters, the IRF9530NPBF can serve as a high-side pass element that supplies initial bias current to the controller IC before the main converter winding takes over. Its -100V VDS rating makes it suitable for 400V-bus PFC front-end auxiliary rails as well as 24V and 48V telecom buses. The 200 mΩ RDS(on) keeps dissipation low at the typical 5-20 mA start-up current, eliminating the need for a heatsink in most designs. Its positive temperature coefficient on resistance simplifies parallel operation when higher start-up currents are required. Once the main converter is running, the auxiliary supply is typically disabled by a small signal transistor to cut quiescent loss.
Recommended
Solenoid and Relay Driver
Industrial solenoid and relay coils require a high-side switch capable of handling the coil's inductive kickback. The IRF9530NPBF's repetitive avalanche rating absorbs the inductive energy when the coil is de-energized, eliminating the need for an external flyback diode in many low-energy applications. With -14A continuous current and -100V blocking voltage, it can drive 12V and 24V solenoids up to several amps continuous duty. The TO-220AB package mounts directly to a chassis or DIN-rail heatsink for thermal management in enclosed industrial cabinets. For high-energy solenoids above the single-pulse avalanche rating, add an external TVS or transzorb clamp across the coil.
Recommended
Audio Amplifier Output Stage
Class-A and Class-AB audio amplifier output stages historically used complementary P-Channel and N-Channel MOSFET pairs in TO-220 packages, with the IRF9530NPBF (or its predecessor IRF9530) as the P-Channel half paired with an N-Channel such as IRF540N. The advantage of MOSFET output stages over bipolar transistors is the absence of thermal runaway and the square-law transfer characteristic that reduces crossover distortion. The IRF9530NPBF's 200 mΩ on-resistance yields modest voltage drop at audio current levels, and the 175°C junction temperature rating supports the high dissipation of Class-A biasing. Its parallel-friendly positive temperature coefficient allows multiple output devices to share current without external ballasting resistors. Modern designs increasingly use dedicated audio MOSFETs, but the IRF9530NPBF remains a viable choice for DIY and repair applications.
Recommended
Recommended Products Summary
Engineering reference data for IRF9530NPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF9530NSTRLPBF | IRF9530PBF | IRF9530N | IRF9530 | IRF4905SPBF | IRFR5305PBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Vishay | Infineon | Infineon |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same (DPAK variant is NOT drop-in) |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Drain-Source Voltage VDS | -100 V | -100 V | -100 V | -100 V | -100 V | -55 V | -55 V |
| Continuous Drain Current ID | -14 A | -14 A | -12 A | -14 A | -12 A | -74 A | -31 A |
| On-Resistance RDS(on) max @ VGS=-10V | 200 mΩ | 200 mΩ | 300 mΩ | 200 mΩ | 300 mΩ | 20 mΩ | 40 mΩ |
| Total Gate Charge Qg | 38.7 nC | 38.7 nC | [DATA_NEEDED] | 38.7 nC | [DATA_NEEDED] | 180 nC | 63 nC |
| Power Dissipation at TC=25°C | 79 W | 79 W | 60 W | 79 W | 60 W | 200 W | 110 W |
| Lead-Free / RoHS | Yes (PBF suffix) | Yes (PBF suffix) | Yes | No (SnPb plated) | Yes | Yes (PBF suffix) | Yes (PBF suffix) |
Key Differentiators
- Fifth Generation HEXFET cell architecture achieves extremely low RDS(on) per silicon area (vs IRF9530 (Vishay third-generation))
- Repetitive avalanche rated for unclamped inductive switching (vs IRFR5305PBF (lower-voltage -55V P-Channel))
- Higher voltage margin for 48V and 80V bus applications (vs IRF4905SPBF (-55V VDS))
Design Notes
Estimated: At TC=25°C the IRF9530NPBF dissipates up to 79W, but at TC=100°C this drops to approximately 47W (linear derating from 25°C to 175°C). For a TO-220AB with θJC ≈ 1.5°C/W and a typical clip-on heatsink of θSA ≈ 15°C/W, total θJA is roughly 16.5°C/W. At 5A continuous load with RDS(on) = 200 mΩ at 25°C (use 1.5x = 300 mΩ at 100°C), conduction dissipation is 5A² × 0.30Ω = 7.5W, yielding a junction-to-ambient temperature rise of 7.5W × 16.5°C/W = 124°C above ambient. Mount the heatsink with thermal compound and ensure a minimum of 1 m/s airflow for sustained high-current operation.
For through-hole TO-220AB mounting, drill pad holes at 1.0 mm (0.04 in) diameter for the leads and a 3.6 mm hole for the mounting tab screw. Use a star washer or split-ring lock washer to maintain thermal compound pressure over thermal cycling. Route the gate trace away from the drain trace to minimize capacitive coupling that can cause dv/dt-induced turn-on; keep the gate-source loop area as small as possible and place a 10 kΩ to 100 kΩ gate-source resistor close to the gate pin to dampen parasitic oscillations.
Do not assume the IRF9530NPBF will fully enhance with a 3.3V or 5V microcontroller GPIO - the gate threshold VGS(th) is typically -2V to -4V, but full enhancement to achieve the datasheet 200 mΩ RDS(on) requires VGS = -10V. Use a simple low-side NPN + pull-up resistor network, or a dedicated gate driver such as IR2127SPBF or IFX9201SGAUMA1. Also avoid exceeding the single-pulse avalanche energy (EAS) when switching unclamped inductive loads - either add a flyback diode or TVS clamp, or choose a part with higher avalanche rating. Finally, do not parallel IRF9530NPBF devices without gate-source resistors on each part; while the positive tempco helps, individual gate-source capacitance mismatch can cause high-frequency oscillation.
Compliance Information
RoHS compliant per the PBF suffix designation. The non-PBF IRF9530N variant is SnPb-plated and NOT RoHS compliant. AEC-Q100 not applicable - automotive designs should select an AEC-Q100-qualified P-Channel MOSFET instead.
