ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon
Артикул: ISC017N04NM5ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.55 | $15,50 |
| 100 | $1.18 | $118,00 |
| 500 | $0.92 | $460,00 |
| 1.000 | $0.78 | $780,00 |
ISC017N04NM5ATMA1 Обзор
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to route or modulate current in power-conversion and load-driving circuits. N-channel MOSFETs such as the ISC017N04NM5 belong to the discrete semiconductor family, sitting alongside IGBTs, thyristors and bipolar transistors in the broader power-electronics hierarchy. Within Infineon's OptiMOS 5 40V platform, this part is optimized for synchronous rectification, low-voltage motor drive and high-current DC-DC conversion where conduction loss dominates thermal budget.
Headline specifications from the manufacturer datasheet include a continuous drain current of 31A at TA=25°C rising to 193A at TC=25°C, a pulsed avalanche rating supporting high inrush conditions, gate charge of 67 nC at 10V VGS, and a power dissipation envelope of 3W (TA) and 115W (TC). The 1.7 mΩ RDS(on) at 10V VGS is one of the lowest in the 40V TDSON-8 FL class, enabling reduced conduction loss and higher efficiency in high-current loops. The part is rated for an operating junction temperature of -55°C to +175°C, supporting automotive under-hood and industrial heavy-duty environments.
Typical applications targeted by the Infineon design team include 12V-24V brushless DC (BLDC) motor drives, e-bike and power-tool inverters, battery management system (BMS) protection FETs, USB Power Delivery (PD) and high-current hot-swap circuits, synchronous rectification in isolated and non-isolated DC-DC converters, and automotive LED lighting modules. The exposed-die TDSON-8 FL package minimizes package resistance contribution and provides a low thermal resistance path to the PCB copper.
For designers, the dominant design consideration is gate-drive voltage: RDS(on) is specified at VGS=10V, but the part also supports 4.5V logic-level drive, with RDS(on) rising roughly 2x at the lower gate voltage. A low-impedance gate driver and adequate VGS decoupling are recommended for high-frequency switching. Compared with planar predecessors, OptiMOS 5 cuts output charge and reverse-recovery charge, simplifying snubber design in half-bridge topologies.
Аналоги без доработки для ISC017N04NM5ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с ISC017N04NM5ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, MSL Level, Operating Temperature Range, Technology, Product Family.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
ISC011N04NM7VATMA1
✅ Прямая замена✓ В наличии
$0.41 / шт.
Открыть даташит →BSC019N04LSTATMA1
✅ Прямая замена✓ В наличии
$1.21 / шт.
Открыть даташит →ISC015N06NM5ATMA1
✅ Прямая замена✓ В наличии
$0.62 / шт.
Открыть даташит →IPC100N04S5L1R5ATMA1
✅ Прямая замена✓ В наличии
$1.18 / шт.
Открыть даташит →ISC151N08NM6ATMA1
✅ Прямая замена✓ В наличии
$0.78 / шт.
Открыть даташит →ISC017N04NM5ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25C | 31 A |
| Continuous Drain Current (ID) at TC=25C | 193 A |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V |
| Gate Charge Qg at VGS=10V | 67 nC |
| Input Capacitance Ciss at VDS=20V | 4800 pF |
| Power Dissipation at TA=25C | 3 W |
| Power Dissipation at TC=25C | 115 W |
| Рабочая температура перехода | -55C to +175C |
| Корпус | PG-TDSON-8 FL (5x6 mm) |
| Тип монтажа | Surface Mount |
| Статус RoHS | Compliant |
| Уровень MSL | 1 (per JEDEC J-STD-020) |
Конфигурация выводов ISC017N04NM5ATMA1
| Контакт 1 | G — Gate |
| Контакт 2 | D — Drain (connected to exposed pad) |
| Контакт 3 | D — Drain (connected to exposed pad) |
| Контакт 4 | D — Drain (connected to exposed pad) |
| Контакт 5 | D — Drain (connected to exposed pad) |
| Контакт 6 | D — Drain (connected to exposed pad) |
| Контакт 7 | D — Drain (connected to exposed pad) |
| Контакт 8 | D — Drain (connected to exposed pad) |
Область безопасной работы (DC)
Типичное применение
ISC017N04NM5ATMA1 подходит для 6 применениеs: BLDC Motor Drive (e-Mobility), Synchronous Rectification in DC-DC Converters, Battery Management System (BMS) Protection FET, USB Power Delivery (PD) Hot-Swap / Load Switch, Automotive LED Lighting Modules, Industrial 24V Solenoid / Relay Driver.
BLDC Motor Drive (e-Mobility)
The ISC017N04NM5ATMA1 fits 12V-48V BLDC motor drives in e-bikes, power tools, and drone ESCs. Its 1.7 mOhm RDS(on) at VGS=10V minimizes conduction loss during the high-side/low-side synchronous PWM switching that BLDC topologies require. The 193A continuous drain current at TC=25C provides 6x headroom over typical 30A motor-phase currents, while 67 nC gate charge keeps driver losses modest at 20-50 kHz PWM. Placed in the half-bridge switching node with a dedicated 10V gate-driver IC and 10-100nF ceramic bypass on the drain, it outperforms planar predecessors in the same TDSON-8 footprint.
Рекомендуется
Synchronous Rectification in DC-DC Converters
The ISC017N04NM5ATMA1 serves as the low-side synchronous rectifier in 12V/24V buck and buck-boost converters for telecom, server, and industrial power. Its 1.7 mOhm RDS(on) and 67 nC gate charge keep body-diode conduction losses low and reverse-recovery charge minimal, which is critical at 300-500 kHz switching frequencies used by point-of-load regulators. Compared with the previous OptiMOS 3 generation, the OptiMOS 5 die shrinks output capacitance and gate-charge, allowing designers to either raise switching frequency (smaller inductor) or improve efficiency (lower thermals) on the same PCB.
Рекомендуется
Battery Management System (BMS) Protection FET
The ISC017N04NM5ATMA1 is well-suited as the high-side or low-side protection MOSFET in 12V-24V lithium-ion battery packs. Its 1.7 mOhm RDS(on) limits steady-state voltage drop and self-heating during normal charge/discharge, while the 40V VDS rating provides 50%+ margin over 24V bus transients. In e-bike and portable-power-station designs, two ISC017N04NM5 parts in back-to-back configuration form the standard bidirectional disconnect path; the 31A continuous TA rating supports 15A continuous discharge with substantial transient margin for motor inrush.
Рекомендуется
USB Power Delivery (PD) Hot-Swap / Load Switch
The ISC017N04NM5ATMA1 acts as the hot-swap protection FET on USB PD 3.1 EPR 28V/36V/48V ports, where 40V VDS provides just enough headroom while the 1.7 mOhm RDS(on) minimizes IR-drop across the cable and connector. Gate-charge of 67 nC is compatible with 1 MHz capable hot-swap controllers, and the exposed-pad TDSON-8 FL package dissipates fault-clearing energy directly into PCB copper. Pair it with a dedicated hot-swap controller for inrush-current limiting and OVP/OCP protection per USB PD specification.
Рекомендуется
Automotive LED Lighting Modules
The ISC017N04NM5ATMA1 fits automotive front-light LED driver and daytime-running-light (DRL) topologies where 12V/24V buses switch high-current LED strings via PWM dimming. Its -55C to +175C junction temperature range covers under-hood and headlamp thermal environments, while 1.7 mOhm RDS(on) keeps conduction loss low in continuous conduction mode. Note that AEC-Q100 qualification requires ordering the -Q1 automotive suffix variant; the standard ISC017N04NM5ATMA1 is industrial-grade and not AEC-Q100 qualified.
Рекомендуется
Industrial 24V Solenoid / Relay Driver
The ISC017N04NM5ATMA1 drives 24V industrial solenoids, valves, and relays in factory automation where low on-resistance keeps coil drive voltage high (less voltage drop across the FET). Its 31A continuous TA rating supports multi-coil paralleling, and the 40V VDS withstands 24V bus inductive kickback when paired with a flyback diode. The exposed-pad TDSON-8 FL footprint simplifies thermal management on dense PLC and I/O module PCBs, while the wide -55C to +175C operating range covers industrial cabinet environments.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для ISC017N04NM5ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | ISC011N04NM7VATMA1 | BSC019N04LSTATMA1 | ISC015N06NM5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 60 V | 40 V |
| RDS(on) at VGS=10V | 1.7 mOhm | 1.1 mOhm (lower loss) | 1.9 mOhm | 1.5 mOhm | 1.5 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 7 (newer) | OptiMOS 5 (same gen) | OptiMOS 5 (same gen) | OptiMOS 5 (same gen) |
| Approx. Unit Price (qty-1) | $1.85 | $2.40 (est., newer gen) | $1.70 (est.) | $2.10 (est.) | $1.90 (est.) |
Ключевые отличия
- Lower RDS(on) than OptiMOS 5 sibling BSC019N04LSTATMA1 (против BSC019N04LSTATMA1)
- More cost-effective than newer OptiMOS 7 generation (против ISC011N04NM7VATMA1)
- Lower Rds(on) per unit area than 60V ISC015N06NM5ATMA1 in same footprint (против ISC015N06NM5ATMA1)
Заметки по проектированию
Estimated: at ID=30A continuous and RDS(on)=1.7 mOhm, conduction loss P=I^2*R = 1.53W; with the exposed pad soldered to a 1 sq inch copper pour (theta_JA ~ 35 C/W), junction temperature rise is roughly 53C above ambient. For higher continuous currents or operation in enclosed enclosures, reduce theta_JA further by enlarging copper area or adding thermal vias to internal copper planes. Always validate junction temperature with the datasheet thermal impedance curve under worst-case ambient.
Place gate-drive components within 5 mm of the gate pin to minimize gate-loop inductance; long gate traces cause ringing that can exceed VGS(max) and damage the device. Use a 10 Ohm gate-source resistor close to the gate pin to dampen parasitic oscillations. The source (pin 2 area) should use multiple vias to a continuous ground copper pour for lowest source inductance, which is the dominant determinant of switching loss in the high-side position.
Do not assume RDS(on) at VGS=4.5V equals the headline 1.7 mOhm value - it is roughly 2-3x higher, dramatically increasing conduction loss in 5V logic-level drive designs. Always check the datasheet Rds(on) vs VGS curve and ensure your gate driver delivers >=10V VGS for full-rated performance. Also avoid exceeding the maximum VGS rating of +/-20V by adding gate-source ESD protection in hot-swap circuits where transients are common.
The PG-TDSON-8 FL exposed pad must be soldered to a copper land pattern with thermal vias for the rated 115W TC power dissipation. Minimum recommended land pattern is per Infineon application note AN-2012-2; use at least 9 thermal vias (0.3 mm drill, 0.6 mm pad, 1.0 mm pitch) connecting the top copper to inner ground/power planes. Insufficient thermal vias are the most common cause of field failures when migrating from a smaller MOSFET package to TDSON-8 FL.
Информация о соответствии
RoHS and REACH compliant per PartGenie and Infineon product page. The standard ISC017N04NM5ATMA1 is industrial-grade (not AEC-Q100 qualified); AEC-Q100 -Q1 suffix variants are available for automotive programs.
