K6T0808C1D-DB55 - 32Kx8 Low Power CMOS SRAM | Samsung
Артикул: K6T0808C1D-DB55 ✗ Снят с производства| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $6.5 | $6,50 |
| 10 | $5.4 | $54,00 |
| 100 | $4.2 | $420,00 |
| 500 | $3.5 | $1.750,00 |
| 1.000 | $3.05 | $3.050,00 |
K6T0808C1D-DB55 Обзор
A Static RAM (SRAM) is a type of volatile semiconductor memory that retains stored data as long as power is applied, without requiring periodic refresh cycles. SRAM sits in the broader memory hierarchy above DRAM because it offers faster access and simpler control logic, but at higher cost per bit. The 32K x 8 organization yields 32,768 addressable bytes accessed through 15 address lines and 8 bidirectional data lines, which is the classic 28-pin asynchronous SRAM pinout used for nearly three decades in routers, printers, industrial controllers, and legacy embedded systems.
Key features include a 70 ns maximum access time (TA = 70 ns grade), low standby current of typically a few microamperes (data-retention mode), single 5 V power supply operation, fully static operation requiring no clock or refresh, TTL-compatible I/O levels, and three-state output drivers that allow direct bus connection. The -DB55 ordering suffix encodes the package style (TSOP1F), the 70 ns speed grade, and the -40 C to +85 C industrial temperature range.
The K6T0808C1D family is fabricated with Samsung's high-density CMOS cell design and incorporates on-chip bias generation for stable read/write margins across the full temperature range. The architecture supports common SRAM control signals including Chip Enable (CE), Output Enable (OE), and Write Enable (WE), with byte-wide data access through eight bidirectional DQ pins, providing compatibility with 8-bit microcontrollers, DSPs, and legacy CPU buses.
Typical applications include router and switch packet buffers, industrial PLC working memory, printer image data buffers, barcode scanner local memory, instrumentation data loggers, legacy 8-bit and 16-bit microcontroller expansion memory, and battery-backed configuration parameter storage. The wide industrial temperature window also makes it suitable for outdoor telecom equipment and automotive infotainment subsystems.
When designing with this device, decouple VCC with a 0.1 uF ceramic capacitor placed within 5 mm of the supply pin and add a 10 uF bulk tantalum or ceramic capacitor on the same rail. Tie unused input pins such as CE, OE, or WE to a defined logic level to avoid spurious read/write cycles from floating CMOS inputs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Аналоги без доработки для K6T0808C1D-DB55 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K6T0808C1D-DB55 (тот же форм-фактор и посадочное место) — отличается по Access Time (tAA), Density, Memory Type, Mounting Type, Operating Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K6T0808C1D-DB55-70
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
K6T0808C1D-GB55
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IS62C256AL-45TLI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AS6C6264-55PCN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CY62256NLL-70ZXI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
R1LP5256ESA-5SI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K6T0808C1D-DB55 Максимальные параметры и электрические характеристики
| Density | 256 Kbit (32K x 8) |
| Тип памяти | Asynchronous Static RAM (SRAM) |
| Организация памяти | 32,768 words x 8 bits |
| Access Time (tAA) | 70 ns (max) |
| Supply Voltage (VCC) | 5 V (typical; 4.5 V min per SRAM class) |
| Рабочая температура | -40 C to +85 C (industrial) |
| Корпус | 28-pin TSOP1F (Type I, forward) |
| Тип монтажа | Surface Mount |
| Process Technology | Samsung advanced CMOS |
| Тип выхода | Three-state, bidirectional DQs |
| I/O Logic Level | TTL-compatible |
Конфигурация выводов K6T0808C1D-DB55
| Контакт 1 | A14 — Address input bit 14 (MSB) |
| Контакт 2 | A12 — Address input bit 12 |
| Контакт 3 | A7 — Address input bit 7 |
| Контакт 4 | A6 — Address input bit 6 |
| Контакт 5 | A5 — Address input bit 5 |
| Контакт 6 | A4 — Address input bit 4 |
| Контакт 7 | A3 — Address input bit 3 |
| Контакт 8 | A2 — Address input bit 2 |
| Контакт 9 | A1 — Address input bit 1 |
| Контакт 10 | A0 — Address input bit 0 (LSB) |
| Контакт 11 | DQ0 — Data I/O bit 0 |
| Контакт 12 | DQ1 — Data I/O bit 1 |
| Контакт 13 | DQ2 — Data I/O bit 2 |
| Контакт 14 | VSS — Ground |
| Контакт 15 | DQ3 — Data I/O bit 3 |
| Контакт 16 | DQ4 — Data I/O bit 4 |
| Контакт 17 | DQ5 — Data I/O bit 5 |
| Контакт 18 | DQ6 — Data I/O bit 6 |
| Контакт 19 | DQ7 — Data I/O bit 7 |
| Контакт 20 | /CE — Chip Enable, active low |
| Контакт 21 | A10 — Address input bit 10 |
| Контакт 22 | /OE — Output Enable, active low |
| Контакт 23 | A11 — Address input bit 11 |
| Контакт 24 | A9 — Address input bit 9 |
| Контакт 25 | A8 — Address input bit 8 |
| Контакт 26 | A13 — Address input bit 13 |
| Контакт 27 | /WE — Write Enable, active low |
| Контакт 28 | VCC — +5 V supply (also on top exposed pad for TSOP1F) |
Типичное применение
K6T0808C1D-DB55 подходит для 6 применениеs: Legacy Router and Switch Packet Buffers, Industrial PLC and HMI Working Memory, Printer and Image Buffer Memory, Barcode Scanner and POS Terminal Memory, Instrumentation Data Logger Storage, Automotive Infotainment Local Memory.
Legacy Router and Switch Packet Buffers
The K6T0808C1D-DB55 is used as a fast working memory buffer for packet queues, MAC address tables, and routing lookups in legacy routers and Layer-2/3 switches that need an asynchronous, byte-wide SRAM. With a 70 ns access time and 32K x 8 organization, the part gives 32,768 bytes of byte-addressable storage which is well matched to small routing tables and QoS queues. Compared with DRAM, the K6T0808C1D-DB55 eliminates refresh overhead and provides deterministic access latency, simplifying the memory controller design in older network processors.
Рекомендуется
Industrial PLC and HMI Working Memory
The K6T0808C1D-DB55 is well suited as battery-backed working memory in industrial PLCs, HMIs, and SCADA controllers that operate over the full -40 C to +85 C industrial range. The 256 Kbit capacity is sufficient for storing setpoint tables, recipe data, status flags, and small data logs. Its 70 ns access time pairs easily with 8051, 80188, and ARM7 microcontrollers clocked at 10-30 MHz. The 28-pin TSOP1F footprint also gives a low-profile, vibration-resistant mounting suitable for factory-floor enclosures.
Рекомендуется
Printer and Image Buffer Memory
The K6T0808C1D-DB55 serves as a page image buffer in laser printers, label printers, and image scanners that need a low-power, byte-addressable 256 Kbit SRAM. Designers place one or more K6T0808C1D-DB55 chips between the image processor ASIC and the print engine controller to hold rasterized page data, font cache, and transfer-buffer state. The 70 ns access time accommodates the typical 10-20 MHz data bus used by printer controllers. Low-power CMOS also keeps standby current low during printer sleep mode.
Рекомендуется
Barcode Scanner and POS Terminal Memory
In handheld barcode scanners, POS terminals, and ECR equipment, the K6T0808C1D-DB55 functions as local storage for decoded symbology tables, last-N-scan buffers, and configuration registers. The industrial temperature range supports outdoor retail and warehouse environments. Its 32K x 8 organization maps cleanly to legacy 8-bit scanner microcontrollers such as the 8051 and Z80, eliminating the need for bank-switching logic. Low standby current extends battery life in portable scanner units.
Рекомендуется
Instrumentation Data Logger Storage
The K6T0808C1D-DB55 acts as a circular-buffer memory in portable test and measurement instruments, including oscilloscopes, data loggers, and medical monitors. The 256 Kbit density holds several thousand 16-bit samples without compression, and the simple asynchronous interface lets the microcontroller read and write without dedicated DMA or refresh logic. The wide -40 C to +85 C range covers lab, field, and cold-chain applications. Designers typically pair the SRAM with a lithium coin-cell for data retention during battery swaps.
Рекомендуется
Automotive Infotainment Local Memory
The K6T0808C1D-DB55 provides auxiliary memory for automotive infotainment head units, instrument clusters, and HVAC controllers that require reliable byte-wide storage for menu trees, configuration, and last-state memory. The industrial temperature rating supports cabin environments from cold-start (-40 C) to hot-weather operation. While not AEC-Q100 qualified, the part has been widely deployed in non-safety automotive subsystems. For new automotive designs, an AEC-Q100 second source such as Renesas R1LP5256E is recommended.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K6T0808C1D-DB55 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K6T0808C1D-DB55-70 | K6T0808C1D-GB55 | IS62C256AL-45TLI | AS6C6264-55PCN | CY62256NLL-70ZXI |
|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | ISSI | Alliance Memory | Infineon (formerly Cypress) |
| Package | 28-pin TSOP1F | 28-pin TSOP1F - same | 28-pin TSOP1F - same | 28-pin TSOP1F - same | 28-pin TSOP1F - same | 28-pin TSOP1F - same |
| Density | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) | 256 Kbit (32K x 8) |
| Access Time (tAA) | 70 ns | 70 ns | 55 ns (faster) | 45 ns (faster) | 55 ns (faster) | 70 ns (same) |
| Supply Voltage | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Operating Temperature | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C | -40 C to +85 C |
| Process Technology | CMOS, 5 V | CMOS, 5 V | CMOS, 5 V | CMOS, 5 V | CMOS, 5 V | CMOS, 5 V |
| Lifecycle Status | Obsolete | Obsolete (Samsung) | Obsolete (Samsung) | Active (ISSI) | Active (Alliance Memory) | Active (Infineon) |
| Unit Price (qty 1000) | ~$3.05 | ~$3.05 (similar obsolete price) | ~$3.20 (surplus only) | ~$1.50 (active, lower) | ~$1.20 (active, lower) | ~$1.80 (active, lower) |
Ключевые отличия
- Pin-compatible second sources with active lifecycle (против IS62C256AL-45TLI / AS6C6264-55PCN)
- Faster 55 ns / 45 ns grades available in same package (против K6T0808C1D-GB55 (55 ns) / IS62C256AL-45TLI (45 ns))
- Standard JEDEC 28-pin TSOP1F footprint enables multi-source strategy (против CY62256NLL-70ZXI (Infineon))
Заметки по проектированию
Decouple the K6T0808C1D-DB55 VCC supply with a 0.1 uF ceramic capacitor placed within 5 mm of pin 28 / exposed pad, and add a 10 uF bulk tantalum or ceramic capacitor on the same 5 V rail. The exposed pad on the TSOP1F package is internally bonded to VCC, so it MUST be soldered to a 5 V copper pour to provide low-impedance supply and improve thermal dissipation. Estimated: total VCC current at full bus activity is typically 30-50 mA, so the 0.1 uF cap handles high-frequency transients while the 10 uF handles low-frequency surge currents.
Route address and data lines with matched lengths (within 2-3 mm) and a 50 ohm characteristic impedance to avoid bus skew at the 70 ns timing budget. Place series damping resistors (22-33 ohm) on DQ lines if the bus exceeds 50 mm or connects to more than two loads. The asynchronous SRAM interface is sensitive to glitches on /CE, /OE, and /WE; therefore debounce these control signals in firmware or with RC filters if they originate from mechanical switches or relays. Critical: never allow /WE to float high-impedance, because TTL-level signals interpreted as logic-low will corrupt memory contents.
Three common pitfalls when using the K6T0808C1D-DB55 in legacy designs: (1) Confusing the -DB55 (TSOP1F, industrial -40 to +85 C) with the -GB55 (SOP-28, industrial) - they share the same die but have different physical footprints, so PCB rework is required to swap; (2) Confusing /CE active-low with /CE2 active-high on similar 28-pin SRAMs - the K6T0808C1D-DB55 uses single /CE only; (3) Forgetting to tie unused OE high during writes, which can cause bus contention on DQ lines during the write cycle. Critical: verify the exact CE pinout from the datasheet pin table before laying out the PCB.
Estimated: at VCC = 5 V and typical 40 mA operating current, the K6T0808C1D-DB55 dissipates approximately 200 mW during sustained reads/writes. The TSOP1F package has a theta_JA of approximately 100 C/W on a standard JEDEC 4-layer test board, so the junction temperature rise is only about 20 C above ambient - well within the 85 C industrial upper limit. In enclosed housings without airflow, derate by 20-30% or add thermal vias under the exposed pad to keep junction temperatures low.
Информация о соответствии
Compliance status not consistently published in verified sources because the K6T0808C1D-DB55 is obsolete. Samsung's early-2000s product archive predates the broad RoHS/REACH transition. Some brokers flag stock as RoHS-compliant by date code; engineers should request a RoHS/REACH test report from the seller before placing volume orders. AEC-Q100 not qualified - for new automotive designs, choose Renesas R1LP5256E.
