M471A2G43AB2-CWE - 16GB DDR4-3200 SO-DIMM | Samsung
Артикул: M471A2G43AB2-CWE ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $156 | $156,00 |
| 10 | $148.5 | $1.485,00 |
| 100 | $138 | $13.800,00 |
| 500 | $129 | $64.500,00 |
| 1.000 | $120.74 | $120.740,00 |
M471A2G43AB2-CWE Обзор
A SO-DIMM (Small Outline Dual In-Memory Module) is a compact JEDEC-standard memory module derived from the full-size DIMM but roughly half the height. DDR4 SDRAM is the fourth generation of double data rate synchronous DRAM; it operates at lower voltage (1.2 V) than DDR3 (1.5 V), reaches higher per-pin data rates up to 3200 MT/s at launch, and uses a 288/260-pin edge connector with point-to-point topology. The SO-DIMM variant mounts vertically in laptop sockets and supports up to 2 ranks per module (2DPC in some platforms).
Key features include 16 GB density in a 1Rx8 organisation (built from sixteen 1 Gx8 FBGA-78 die), 3200 MT/s transfer rate (PC4-25600), CAS Latency 22 (CL22), 1.2 V typical operating voltage (1.14-1.26 V per JEDEC DDR4 spec), and JEDEC-compliant 260-pin SO-DIMM edge finger geometry. The module is unbuffered, non-ECC, and supports standard SPD timings for plug-and-play compatibility with Intel and AMD mobile platforms.
Technically, the module follows the JEDEC DDR4 standard JESD79-4, supporting on-die termination (ODT), command/address parity on qualified platforms, and write CRC for signal-integrity robustness. The 1Rx8 organisation routes a single 64-bit data word through eight x8 DRAM devices per rank, balancing density and signal loading for mobile workloads.
Typical applications include laptop memory upgrades, ultrabook and thin-client RAM expansion, mini-PC and small-form-factor workstations, and embedded industrial PCs that require JEDEC-standard SO-DIMM compatibility. The 3200 MT/s rating aligns with mainstream 11th/12th-generation Intel Core and AMD Ryzen mobile platforms.
Design consideration: when populating two SO-DIMM sockets, mixing 1Rx8 and 2Rx8 modules downgrades the channel to the slower rank's timings on some chipsets - use matched modules for dual-channel performance.
This page synthesises distributor pricing, JEDEC-aligned specifications, drop-in alternatives, and practical upgrade notes not always shown on a single distributor listing.
Аналоги без доработки для M471A2G43AB2-CWE — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
M471A2G43AB2-CWE-Q
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
M471A2G43AB2-CTD
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
M471A2K43BB1-CWE
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
KVR32S22D8/16
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
CT16G4SFRA32A
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
AD4S320016G22-BGN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
M471A2G43AB2-CWE Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM SO-DIMM |
| Capacity | 16 GB |
| Module Configuration | 1 x 16 GB (1Rx8) |
| Скорость передачи данных | 3200 MT/s (PC4-25600) |
| Speed Grade | DDR4-3200AA |
| Задержка CAS | CL22 |
| Operating Voltage | 1.2 V (typ, 1.14-1.26 V per JEDEC) |
| Form Factor | 260-pin SO-DIMM |
| Buffered / ECC | Unbuffered, Non-ECC |
| DRAM Organisation | 16 x 1 Gx8 FBGA-78 (2Gx64 total) |
| Rank Configuration | 1 Rank (1Rx8) |
| PCB Height | Standard SO-DIMM (approx. 30 mm) |
| Рабочая температура | 0C to +85C (commercial) |
| Compliance | JEDEC JESD79-4 (DDR4 SDRAM) |
| Статус RoHS | Compliant |
| Lead-Free | Yes |
| Без галогенов | Yes |
| Compatibility | Dell, HP, Lenovo, ASUS and other laptop OEMs |
Руководство по цоколевке M471A2G43AB2-CWE в корпусе standard
Цоколевка для M471A2G43AB2-CWE (корпус standard). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для M471A2G43AB2-CWE.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
M471A2G43AB2-CWE подходит для 6 применениеs: Laptop Memory Upgrade, Ultrabook and Thin Client, Mini-PC and SFF Workstation, Industrial Embedded PC, Gaming Laptop Memory Expansion, Workstation Memory Upgrade.
Laptop Memory Upgrade
The M471A2G43AB2-CWE is purpose-built for laptop memory upgrades where the 260-pin SO-DIMM form factor is the only physical option. Its 16 GB density at 1Rx8 single-rank configuration maximises capacity per slot while keeping the channel loading light, which helps 11th/12th-gen Intel Core and AMD Ryzen 5000/6000 mobile controllers maintain their rated 3200 MT/s. Compared with dual-rank alternatives, this Samsung module draws slightly less power at idle and runs cooler, extending battery life by an estimated 5-8% during sustained workloads. Install one module per slot, or two for symmetric dual-channel with up to 51.2 GB/s aggregate bandwidth.
Рекомендуется
Ultrabook and Thin Client
Ultrabooks and thin-client systems frequently ship with soldered-down LPDDR4 but offer a single user-accessible SO-DIMM slot for expansion; the M471A2G43AB2-CWE fits this slot exactly. Its 1.2 V JEDEC DDR4-3200 operation matches the TDP envelope of these fanless or low-fan designs, while the 16 GB density doubles the typical 8 GB OEM configuration to enable heavier ChromeOS, VMware Horizon, or Citrix workloads. The 1Rx8 layout avoids the dual-rank signal-integrity penalties some chipsets apply to thin-client platforms, preserving full bandwidth at CL22.
Рекомендуется
Mini-PC and SFF Workstation
Mini-PCs such as Intel NUC, ASUS Mini PC, and Lenovo ThinkCentre Tiny typically expose two 260-pin SO-DIMM sockets and benefit from dual-channel memory configurations. Installing two M471A2G43AB2-CWE modules populates 32 GB symmetric across channels and reaches the full ~51.2 GB/s platform bandwidth, ideal for content creation, light video editing, and CAD workloads. The Samsung module's proven compatibility with the SO-DIMM sockets used in these chassis - validated by OEM listings - reduces the risk of POST failures that occasionally occur with off-brand modules.
Рекомендуется
Industrial Embedded PC
Industrial embedded PCs used in factory automation, kiosk displays, and digital signage often require reliable DDR4 SO-DIMM with documented longevity. The Samsung M471A2G43AB2-CWE draws on Samsung's tier-1 DRAM manufacturing and JEDEC JESD79-4 compliance to deliver predictable MTBF behaviour over multi-year deployments. With its 1Rx8 single-rank architecture and 1.2 V operating point, the module is well suited to passively-cooled or fan-cooled enclosures where thermal headroom is constrained, and the standard 260-pin footprint enables drop-in replacement over the system lifecycle.
Рекомендуется
Gaming Laptop Memory Expansion
Modern gaming laptops often ship with 8 GB or 16 GB of DDR4-3200, which becomes a bottleneck when pairing the discrete GPU with a high-refresh-rate QHD display. Upgrading to the M471A2G43AB2-CWE module - or a matched pair for dual-channel - lifts the frame buffer ceiling and improves 1% lows in CPU-bound titles by 8-15% according to user benchmarks. Samsung's reputation for low-defect DRAM helps reduce the small but real risk of XMP/EXPO training failures during POST, an issue occasionally reported with lesser-known brands on gaming motherboards.
Рекомендуется
Workstation Memory Upgrade
Mobile workstation laptops (Dell Precision, HP ZBook, Lenovo ThinkPad P-series) frequently accept 260-pin DDR4 SO-DIMMs and use ECC or non-ECC variants depending on the platform. The M471A2G43AB2-CWE - being non-ECC - fits the consumer-oriented mobile workstation tiers but should be verified against the specific platform's Qualified Vendor List (QVL). Upgrading from 8 GB to 16 GB or 32 GB (paired) significantly accelerates CAD assemblies, simulation pre-processing, and large spreadsheet recalculations where dataset size exceeds cache.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для M471A2G43AB2-CWE — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | M471A2G43AB2-CWE-Q | M471A2G43AB2-CTD | M471A2K43BB1-CWE | KVR32S22D8/16 | CT16G4SFRA32A | AD4S320016G22-BGN |
|---|---|---|---|---|---|---|---|
| Brand | Samsung | Samsung | Samsung | Samsung | Kingston | Crucial (Micron) | XPG |
| Package | 260-pin SO-DIMM | 260-pin SO-DIMM - same | 260-pin SO-DIMM - same | 260-pin SO-DIMM - same | 260-pin SO-DIMM - same | 260-pin SO-DIMM - same | 260-pin SO-DIMM - same |
| Capacity | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB | 16 GB |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| CAS Latency | CL22 | CL22 | CL22 | CL22 | CL22 | CL22 | CL22 |
| Operating Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Rank Configuration | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 | 1Rx8 |
| ECC Support | Non-ECC | Non-ECC | Non-ECC | Non-ECC | Non-ECC | Non-ECC | Non-ECC |
| Approx. Price (1 pc) | USD 156.00 | USD 150-160 | USD 160-180 | USD 145-155 | USD 135-145 | USD 140-150 | USD 125-140 |
Ключевые отличия
- Samsung tier-1 OEM brand with broad OEM validation (против KVR32S22D8/16)
- 1Rx8 single-rank layout for lower power and signal loading (против NEMIX RAM 2Rx8 equivalent)
- Documented JEDEC JESD79-4 DDR4 compliance with standard SPD timings (против AD4S320016G22-BGN (XPG gaming brand))
Заметки по проектированию
Estimated: do NOT mix the M471A2G43AB2-CWE (1Rx8) with a 2Rx8 module of the same speed grade in dual-channel mode on older Intel 8th/9th-gen platforms - some chipsets will downclock to single-channel or reduce the bus speed by one bin. For modern 11th/12th-gen Intel and AMD Ryzen 5000/6000 platforms, mixed rank is more tolerant but still loses some symmetric dual-channel advantage. Match two identical M471A2G43AB2-CWE modules for guaranteed full 51.2 GB/s aggregate bandwidth.
DDR4 SO-DIMM modules such as the M471A2G43AB2-CWE generate 3-5 W of heat under sustained read/write workloads, and laptop SO-DIMM slots often have limited airflow due to the keyboard or bottom cover proximity. Estimated: in a passively cooled enclosure, prolonged thermal stress at 85C can accelerate DRAM refresh-rate degradation. If the laptop has bottom intake vents, avoid placing it on soft surfaces (bed, couch) during heavy workloads to maintain airflow across the SO-DIMM area.
When installing the M471A2G43AB2-CWE in a laptop, fully click both SO-DIMM socket latches to a vertical position before insertion, then press the module flat into the 260-pin edge finger connector at approximately a 25-30 degree angle before rotating it down until the latches lock. Forcing the module in upside-down (incorrect key notch orientation) can bend the gold fingers and damage the socket; always verify the notch offset matches the DDR4 keying (offset 5 from the centre of the pin 1 side).
Estimated: at 1.2 V, each 16 GB module draws approximately 1.5-2.5 W at idle and 4-5 W at full bandwidth. Two modules in dual-channel can add up to 10 W to system power consumption. This is within the DDR4 SO-DIMM JEDEC power envelope and is automatically managed by the memory controller's DLL power-down and CKE-based idle states. No additional power-rail design is required - the laptop's existing 1.2 V memory regulator (typically a buck converter with 3 A capability) is sufficient.
Информация о соответствии
Compliant with JEDEC JESD79-4 DDR4 SDRAM specification. RoHS and REACH compliance per Samsung semiconductor product environmental documentation. AEC-Q100 not applicable - this is a commercial-grade memory module, not an automotive-grade component. Lead-free and halogen-free per Samsung M-Die product family disclosures.
