K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
Артикул: K4B4G1646E-BYK0 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.52 | $2,52 |
| 10 | $2.3 | $23,00 |
| 100 | $2.1 | $210,00 |
| 500 | $1.95 | $975,00 |
| 1.000 | $1.8 | $1.800,00 |
K4B4G1646E-BYK0 Обзор
DDR3L SDRAM is a type of double data rate synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption by up to 20% while maintaining similar performance. It is part of the DDR3 memory family, which uses an 8n-prefetch architecture to achieve high data rates. DDR3L is widely used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, x16 organization, and support for DDR3-1600 (800 MHz) operation. The device features on-die termination (ODT), ZQ calibration, and a programmable CAS latency. It operates over a temperature range of 0°C to +95°C (TC) and supports auto precharge and self-refresh modes. The 96-ball FBGA package provides a compact footprint suitable for space-constrained designs.
The K4B4G1646E-BYK0 uses Samsung's E-die process technology, which offers improved performance and power efficiency compared to earlier die revisions. The device includes dynamic on-chip termination and asynchronous reset for robust signal integrity. It supports a burst length of 8 and a burst chop of 4, enabling flexible data access patterns.
Typical applications include DDR3L memory modules for laptops, embedded computing, networking equipment, and industrial PCs. Its low voltage and high density make it ideal for power-sensitive designs. The device is also suitable for use in set-top boxes, routers, and other consumer electronics.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 800 MHz. The device requires a 1.35V supply and a separate VDDQ for the I/O, which should be regulated to the specified tolerances.
Аналоги без доработки для K4B4G1646E-BYK0 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K4B4G1646E-BYK0 (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Burst Length, Operating Temperature, Supply Voltage.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K4B4G1646E-BCNB
✅ Прямая замена✓ В наличии
$13.5227 / шт.
Открыть даташит →K4B4G1646E-BYK000
✅ Прямая замена✓ В наличии
$0.5619 / шт.
Открыть даташит →K4B4G1646E-BCMA
✅ Прямая замена✓ В наличии
$3.7734 / шт.
Открыть даташит →MT41K256M16HA-125
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.3636 / шт.
Открыть даташит →H5TC4G63AFR
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
IS43TR16512B
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
K4B4G1646E-BYK0 Максимальные параметры и электрические характеристики
| Тип памяти | DDR3L SDRAM |
| Density | 4 Gb |
| Организация памяти | 256M x 16 |
| Напряжение питания | 1.35 V (1.283 V to 1.45 V) |
| Скорость передачи данных | DDR3-1600 (800 MHz) |
| Корпус | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Рабочая температура | 0°C to +95°C (TC) |
| Задержка CAS | 11 (CL-tRCD-tRP) |
| Burst Length | 8 (fixed), 4 (burst chop) |
| On-Die Termination | Yes (dynamic ODT) |
| ZQ Calibration | Yes |
| Auto Precharge | Yes |
| Self-Refresh | Yes |
| Asynchronous Reset | Yes |
| Data Mask | Yes |
| RoHS | Compliant |
Конфигурация выводов K4B4G1646E-BYK0
| Контакт A1 | VDD — Power supply (1.35V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | VSS — Ground |
| Контакт B1 | DQ1 — Data input/output 1 |
| Контакт B2 | VDDQ — I/O power supply |
| Контакт B3 | DQ2 — Data input/output 2 |
| Контакт C1 | DQ3 — Data input/output 3 |
| Контакт C2 | VSSQ — I/O ground |
| Контакт C3 | DQ4 — Data input/output 4 |
| Контакт D1 | DQ5 — Data input/output 5 |
| Контакт D2 | VDD — Power supply |
| Контакт D3 | DQ6 — Data input/output 6 |
| Контакт E1 | DQ7 — Data input/output 7 |
| Контакт E2 | VSS — Ground |
| Контакт E3 | DQS0 — Data strobe 0 |
| Контакт F1 | DQS0# — Data strobe 0 complement |
| Контакт F2 | VDDQ — I/O power supply |
| Контакт F3 | DM0 — Data mask 0 |
| Контакт G1 | CK — Clock |
| Контакт G2 | CK# — Clock complement |
| Контакт G3 | CKE — Clock enable |
| Контакт H1 | CS# — Chip select |
| Контакт H2 | RAS# — Row address strobe |
| Контакт H3 | CAS# — Column address strobe |
| Контакт J1 | WE# — Write enable |
| Контакт J2 | A0 — Address input 0 |
| Контакт J3 | A1 — Address input 1 |
| Контакт K1 | A2 — Address input 2 |
| Контакт K2 | A3 — Address input 3 |
| Контакт K3 | A4 — Address input 4 |
| Контакт L1 | A5 — Address input 5 |
| Контакт L2 | A6 — Address input 6 |
| Контакт L3 | A7 — Address input 7 |
| Контакт M1 | A8 — Address input 8 |
| Контакт M2 | A9 — Address input 9 |
| Контакт M3 | A10/AP — Address input 10 / auto precharge |
| Контакт N1 | A11 — Address input 11 |
| Контакт N2 | A12 — Address input 12 |
| Контакт N3 | A13 — Address input 13 |
| Контакт P1 | A14 — Address input 14 |
| Контакт P2 | BA0 — Bank address 0 |
| Контакт P3 | BA1 — Bank address 1 |
| Контакт R1 | BA2 — Bank address 2 |
| Контакт R2 | ODT — On-die termination |
| Контакт R3 | RESET# — Asynchronous reset |
| Контакт T1 | VDD — Power supply |
| Контакт T2 | VSS — Ground |
| Контакт T3 | NC — No connect |
Типичное применение
K4B4G1646E-BYK0 подходит для 6 применениеs: Laptop Memory, Networking Equipment, Industrial PCs, Set-Top Boxes, Embedded Computing, Consumer Electronics.
Laptop Memory
The K4B4G1646E-BYK0 is ideal for laptop memory modules due to its low 1.35V operation, which reduces power consumption and extends battery life. Its 4Gb density and x16 organization allow for compact SO-DIMM designs. The DDR3-1600 data rate provides sufficient bandwidth for everyday computing tasks. When used in a dual-channel configuration, it can deliver up to 25.6 GB/s, ensuring smooth multitasking and multimedia performance. The 96-ball FBGA package enables thin module profiles, fitting into ultrabooks and thin-and-light laptops.
Рекомендуется
Networking Equipment
In networking equipment such as routers and switches, the K4B4G1646E-BYK0 provides high-density, low-power memory for packet buffering and routing tables. Its 4Gb capacity supports large forwarding databases, while the 1.35V operation reduces heat generation in enclosed spaces. The DDR3-1600 speed ensures fast data throughput, essential for handling high-bandwidth network traffic. The device's on-die termination and ZQ calibration improve signal integrity, critical for reliable operation in noisy environments. The compact FBGA package allows for dense PCB layouts, enabling high-port-count designs.
Рекомендуется
Industrial PCs
The K4B4G1646E-BYK0 is well-suited for industrial PCs that require reliable operation over a wide temperature range. Its 0°C to +95°C operating range ensures functionality in harsh environments. The low 1.35V supply reduces power dissipation, which is beneficial in fanless designs. The 4Gb density supports demanding industrial applications such as machine vision and process control. The DDR3-1600 data rate provides fast access to large datasets, improving system responsiveness. The 96-ball FBGA package is robust and suitable for vibration-prone environments.
Рекомендуется
Set-Top Boxes
In set-top boxes, the K4B4G1646E-BYK0 provides cost-effective, low-power memory for video streaming and user interface rendering. Its 4Gb capacity is sufficient for buffering high-definition video streams and storing application data. The 1.35V operation reduces power consumption, important for always-on devices. The DDR3-1600 speed ensures smooth playback and fast channel switching. The compact FBGA package allows for small form factor designs, fitting into slim set-top box enclosures. The device's low power also simplifies thermal management, reducing the need for active cooling.
Рекомендуется
Embedded Computing
The K4B4G1646E-BYK0 is ideal for embedded computing applications such as single-board computers and IoT gateways. Its low 1.35V operation is perfect for power-constrained designs, and the 4Gb density provides ample memory for Linux-based applications. The DDR3-1600 data rate supports fast data processing, enabling real-time analytics and edge computing. The 96-ball FBGA package is easy to route on multi-layer PCBs, simplifying layout. The device's wide temperature range makes it suitable for outdoor and industrial IoT deployments.
Рекомендуется
Consumer Electronics
In consumer electronics like smart TVs and gaming consoles, the K4B4G1646E-BYK0 delivers high bandwidth and low power consumption. Its 4Gb density supports high-resolution graphics and multitasking. The 1.35V supply reduces energy costs and heat, contributing to quieter operation. The DDR3-1600 speed ensures smooth video playback and responsive user interfaces. The compact FBGA package enables slim device designs. The device's reliability and long lifecycle make it a preferred choice for mass-produced consumer products.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K4B4G1646E-BYK0 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K4B4G1646E-BCNB | MT41K256M16HA-125 | H5TC4G63AFR |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Micron Technology | SK Hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Data Rate | DDR3-1600 | DDR3-1600 | DDR3-1600 | DDR3-1600 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Low 1.35V operation reduces power consumption by 20% compared to standard DDR3 (против K4B4G1646E-BCNB)
- Samsung E-die process technology offers improved performance and power efficiency (против MT41K256M16HA-125)
- Wide operating temperature range of 0°C to +95°C (против H5TC4G63AFR)
Заметки по проектированию
For reliable operation at 800 MHz, ensure controlled impedance traces for DQ, DQS, and clock signals. Use 50-ohm single-ended and 100-ohm differential routing. Keep trace lengths matched within ±10 mils for data and strobe pairs. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise.
The K4B4G1646E-BYK0 has a maximum operating temperature of 95°C. In high-density designs, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The 1.35V supply reduces power dissipation, but at high data rates, the device can still generate significant heat. Use thermal vias under the FBGA package to improve heat transfer to the PCB.
Use on-die termination (ODT) settings to match the memory bus impedance and reduce reflections. The device supports dynamic ODT, which can be configured via the mode registers. For DDR3-1600, typical ODT values are 40 ohms or 60 ohms. Ensure the memory controller is configured with the same ODT settings to maintain signal integrity.
Информация о соответствии
RoHS compliant per JLCPCB listing. Other compliance data not specified in provided sources.
