MR2A16ACYS35 - 4Mb 3.3V 35ns Parallel MRAM | Everspin TSOP-44
Артикул: MR2A16ACYS35 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $16.01 | $16,01 |
| 10 | $14.85 | $148,50 |
| 100 | $13.2 | $1.320,00 |
| 500 | $11.95 | $5.975,00 |
| 1.000 | $10.8 | $10.800,00 |
MR2A16ACYS35 Обзор
What is MRAM? MRAM (Magnetoresistive Random Access Memory) is a non-volatile memory technology that uses magnetic tunnel junctions (MTJs) to store each bit. MRAM sits in the hierarchy: memory IC -> non-volatile memory -> MRAM. Unlike Flash, MRAM writes without high-voltage charge pumps and unlike SRAM, MRAM retains data through power loss, combining SRAM speed with FRAM/EEPROM persistence.
Key features include 35 ns read and write cycle time (effectively zero write latency versus the millisecond-class erase cycles of Flash or EEPROM), byte/word controlled write enable (/BW), chip enable (/E1, /E2), and output enable (/G) signals that emulate a standard asynchronous SRAM bus, and a low standby current typical for battery-backed designs. Data is non-volatile for >20 years and the part offers unlimited read/write endurance, eliminating the wear-out mechanisms that limit Flash.
The MR2A16ACYS35 uses Everspin's field-switched Toggle MRAM cell with a parallel asynchronous interface that drops onto SRAM pinouts. Architecture is a 256Kx16 array with internal address latch, write driver, and sense amplifiers; the parallel interface supports 16-bit data bus and 18-bit address bus with /LB and /UB byte controls. Performance is SRAM-equivalent for reads (35 ns) with the bonus of instant non-volatile writes (also 35 ns).
Typical applications include industrial data logging where power-loss immunity is mandatory, factory automation with battery-backed SRAM replacement, RAID controller write journals, point-of-sale terminals, smart-meter event buffers, and automotive subsystems requiring -40C to +85C temperature range. The Everspin MR2A16A datasheet documents a 20-year data-retention specification.
When designing with this device, plan for a single 3.3 V supply and place a 0.1 uF decoupling capacitor close to the VDD/VSS pins. Toggle MRAM does not require the long programming delays of Flash or the wear leveling required by EEPROM, but the bus timing must respect the 35 ns tAVAV cycle time when running at full speed.
Аналоги без доработки для MR2A16ACYS35 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MR2A16ACYS35R
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MR2A16ATS35C
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MR2A08ACYS35
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MR2A16ATS35A
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MB85R4M2TFN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MR2A16ACYS35 Максимальные параметры и электрические характеристики
| Тип памяти | MRAM (Magnetoresistive RAM), non-volatile |
| Density | 4 Mbit (4,194,304 bits) |
| Организация памяти | 256K words x 16 bits |
| Интерфейс | Asynchronous parallel (SRAM-compatible) |
| Access Time (tAA) | 35 ns |
| Supply Voltage (VDD) | 3.0 V to 3.6 V (3.3 V nominal) |
| Разрядность шины данных | 16-bit (with /LB and /UB byte control) |
| Address Bus Width | 18-bit |
| Рабочая температура | -40C to +85C (industrial) |
| Корпус | 44-pin TSOP-II (Type II, 10.2 mm body width) |
| Тип монтажа | Surface Mount |
| Data Retention | >20 years (per Everspin datasheet) |
| Write Endurance | Unlimited (Toggle MRAM) |
| Статус RoHS | Compliant |
Конфигурация выводов MR2A16ACYS35
| Контакт 1 | A17 — Address input 17 |
| Контакт 2 | A16 — Address input 16 |
| Контакт 3 | A15 — Address input 15 |
| Контакт 4 | A12 — Address input 12 |
| Контакт 5 | A7 — Address input 7 |
| Контакт 6 | A6 — Address input 6 |
| Контакт 7 | A5 — Address input 5 |
| Контакт 8 | A4 — Address input 4 |
| Контакт 9 | A3 — Address input 3 |
| Контакт 10 | A2 — Address input 2 |
| Контакт 11 | A1 — Address input 1 |
| Контакт 12 | A0 — Address input 0 |
| Контакт 13 | /E1 — Chip enable 1 (active low) |
| Контакт 14 | /E2 — Chip enable 2 (active low) |
| Контакт 15 | /W — Write enable (active low) |
| Контакт 16 | /G — Output enable (active low) |
| Контакт 17 | VSS — Ground |
| Контакт 18 | DQ15 — Data I/O 15 (MSB) |
| Контакт 19 | DQ14 — Data I/O 14 |
| Контакт 20 | DQ13 — Data I/O 13 |
| Контакт 21 | DQ12 — Data I/O 12 |
| Контакт 22 | DQ11 — Data I/O 11 |
| Контакт 23 | DQ10 — Data I/O 10 |
| Контакт 24 | DQ9 — Data I/O 9 |
| Контакт 25 | DQ8 — Data I/O 8 |
| Контакт 26 | DQ7 — Data I/O 7 |
| Контакт 27 | DQ6 — Data I/O 6 |
| Контакт 28 | DQ5 — Data I/O 5 |
| Контакт 29 | DQ4 — Data I/O 4 |
| Контакт 30 | DQ3 — Data I/O 3 |
| Контакт 31 | DQ2 — Data I/O 2 |
| Контакт 32 | DQ1 — Data I/O 1 |
| Контакт 33 | DQ0 — Data I/O 0 (LSB) |
| Контакт 34 | VSS — Ground |
| Контакт 35 | VDD — Power supply (3.3 V) |
| Контакт 36 | A13 — Address input 13 |
| Контакт 37 | A8 — Address input 8 |
| Контакт 38 | A9 — Address input 9 |
| Контакт 39 | A11 — Address input 11 |
| Контакт 40 | /UB — Upper byte enable (active low) |
| Контакт 41 | /LB — Lower byte enable (active low) |
| Контакт 42 | A10 — Address input 10 |
| Контакт 43 | A14 — Address input 14 |
| Контакт 44 | NC — Not connected (per datasheet) |
Типичное применение
MR2A16ACYS35 подходит для 6 применениеs: Industrial Data Logging with Power-Loss Immunity, Battery-Free SRAM Replacement in Embedded Systems, RAID Controller Write Journal / Cache Protection, Smart-Meter Event and Tamper Buffers, Point-of-Sale (POS) Terminal Transaction Log, Automotive Subsystem Non-Volatile Buffer (Pre-AEC-Q100 Design).
Industrial Data Logging with Power-Loss Immunity
The MR2A16ACYS35's 35 ns write time and >20-year data retention make it ideal for industrial data loggers that must capture events through unplanned power loss. In a factory PLC or vibration monitor, the MRAM replaces battery-backed SRAM, capturing each sensor sample directly into a non-volatile cell with no buffering required. The 256Kx16 organization holds 524,288 sixteen-bit records, sufficient for shift-long event traces. Designers place a 0.1 uF decoupling capacitor near VDD and use the /LB and /UB byte enables to pack 8-bit samples two per word. Compared with Flash, the device avoids the millisecond erase delay, and compared with battery-backed SRAM it eliminates lithium cell replacement cycles. Operating temperature -40C to +85C supports outdoor and shop-floor enclosures.
Рекомендуется
Battery-Free SRAM Replacement in Embedded Systems
The MR2A16ACYS35 is a battery-free drop-in replacement for 256Kx16 asynchronous SRAM modules like 61LV25616, eliminating the lithium coin cell while preserving >20 years of retention through the same TSOP-44 footprint. Designers connect the parallel address bus (A0-A17) and data bus (DQ0-DQ15) directly to the MCU, add /E1, /E2, /G, /W control signals, and place the part on the existing SRAM footprint. Power consumption drops because there is no battery trickle charger, and the BOM loses a hazardous-material component. MRAM's 35 ns cycle time matches commodity SRAM, so firmware that uses pointer dereferences and memcpy runs without code changes. The -40C to +85C industrial grade supports metering, POS, and remote sensor applications.
Рекомендуется
RAID Controller Write Journal / Cache Protection
In RAID controllers and storage appliances, the MR2A16ACYS35 serves as a non-volatile write-back cache that survives power loss. The 35 ns write throughput absorbs bursty host writes without queueing, and the 4-Mbit capacity holds recent journal entries before they are committed to NAND. Because MRAM writes are symmetric with reads (no asymmetric program/erase penalty), firmware can simplify its flush logic. The 3.3 V single-supply operation eases integration with existing RAID ASIC power rails, and the industrial -40C to +85C range supports top-of-rack enclosures. Replacing the legacy battery-backed SDRAM removes a service liability and shortens the rebuild time after a power event.
Рекомендуется
Smart-Meter Event and Tamper Buffers
Smart electricity, water, and gas meters use the MR2A16ACYS35 as a non-volatile event and tamper-detection buffer. The 256Kx16 organization stores hundreds of tamper timestamps and last-gasp consumption snapshots, written at 35 ns with no latency penalty when mains power fails. The device's 3.0 V to 3.6 V supply matches a small lithium-thionyl chloride backup or super-cap rail, while its -40C to +85C operation handles outdoor meter enclosures. MRAM's magnetic cell is immune to the radiation and magnetic-field disturbances that can corrupt EEPROM at remote sites. The 44-pin TSOP-II footprint fits standard meter PCBs and shares pinout with the MB85R4M2T FRAM predecessor.
Рекомендуется
Point-of-Sale (POS) Terminal Transaction Log
POS terminals use the MR2A16ACYS35 to journal transactions during network outages, ensuring every receipt and authorization request survives until the link is restored. The 4-Mbit capacity holds tens of thousands of small transaction records; the 35 ns write time keeps the sales path fast even during peak retail hours. MRAM replaces battery-backed SRAM modules that require periodic battery replacement, reducing service calls and supporting POS in remote or unattended locations. The 3.3 V supply aligns with the terminal's main logic rail, and the TSOP-44 package fits the existing footprint used by legacy 256Kx16 SRAMs.
Рекомендуется
Automotive Subsystem Non-Volatile Buffer (Pre-AEC-Q100 Design)
During pre-production and prototype development of automotive subsystems, the MR2A16ACYS35 provides a non-volatile buffer for ECU event logs, learned parameters, and diagnostic trouble codes. Designers use it on the benchtop before committing to the AEC-Q100 Grade-1 qualified MR2A16ATS35C variant for production. The 35 ns read/write speed captures CAN bus traffic without queueing, and the 20-year retention protects learned idle and knock parameters through long shelf times. The 3.3 V single supply aligns with the ECU's sensor rail, and the 44-TSOP-II footprint lets engineers reuse development board layouts between industrial (CY) and automotive (AT) variants.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MR2A16ACYS35 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MR2A16ACYS35R | MR2A16ATS35C | MR2A08ACYS35 | MR2A16ATS35A | MB85R4M2TFN |
|---|---|---|---|---|---|---|
| Package | 44-TSOP-II (10.2 mm) | 44-TSOP-II (10.2 mm) - same | 44-TSOP-II (10.2 mm) - same | 44-TSOP-II (10.2 mm) - same | 44-TSOP-II (10.2 mm) - same | 44-TSOP-II (10.2 mm) - same |
| Brand | Everspin Technologies | Everspin Technologies | Everspin Technologies | Everspin Technologies | Everspin Technologies | Fujitsu |
| Memory Type | MRAM (Toggle) | MRAM (Toggle) | MRAM (Toggle) | MRAM (Toggle) | MRAM (Toggle) | FRAM |
| Density | 4 Mbit | 4 Mbit | 4 Mbit | 4 Mbit (512Kx8) | 4 Mbit | 4 Mbit |
| Organization | 256Kx16 | 256Kx16 | 256Kx16 | 512Kx8 | 256Kx16 | 256Kx16 |
| RoHS Status | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Truly non-volatile with 35 ns symmetric read/write throughput (против MB85R4M2TFN)
- Battery-free SRAM replacement eliminating lithium cells (против Battery-backed SRAM (e.g. 61LV25616 + coin cell))
- Industrial temperature grade with AEC-Q100 upgrade path (против MR2A16ACYS35R)
Заметки по проектированию
The MR2A16ACYS35 requires a single 3.3 V supply on VDD (pin 35) with VSS (pins 17 and 34) tied to ground. Place a 0.1 uF X7R ceramic decoupling capacitor within 5 mm of the VDD pin and a bulk 4.7 uF tantalum or ceramic capacitor on the same rail. The device is not 5 V tolerant, so any signal that may exceed 3.6 V (including during hot-plug events) must be level-shifted. Toggle MRAM does not need high-voltage charge pumps, simplifying the power section versus Flash.
The 44-pin TSOP-II footprint is the standard 10.2 mm body JEDEC MO-142 outline. Use 0.4 mm lead pitch with NSMD (non-solder-mask-defined) pads for best solder joint reliability. Keep the parallel address and data bus traces matched within 1 cm and avoid routing them over split power planes. Place a continuous ground plane beneath the part to keep the magnetic cell environment stable; Toggle MRAM is generally tolerant of external fields, but designers should avoid placing large inductors directly over the package.
Do not assume the MR2A16ACYS35 has SRAM-style read-modify-write semantics - Toggle MRAM writes are atomic per word but read-modify-write cycles must still be enforced in firmware because the part does not latch the previous data on /W transitions. Also note that the /LB and /UB byte enables replace the upper or lower byte of the 16-bit word during writes; failing to assert both enables can leave the complementary byte unchanged. Finally, verify that the host MCU's external memory controller timing matches the 35 ns tAA and tAVAV values from the Everspin datasheet before designing around higher bus speeds.
Информация о соответствии
RoHS compliant per Everspin product page and distributor listings. The MR2A16ACYS35 itself is industrial grade (-40C to +85C); AEC-Q100 Grade-1 qualification is available on the MR2A16ATS35C variant. Halogen-free status not explicitly stated in available data.
