MT40A512M8RH-075E:B - DDR4 4Gb 2666 MT/s SDRAM | Micron
Артикул: MT40A512M8RH-075E:B ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.2 | $3,20 |
| 10 | $2.95 | $29,50 |
| 100 | $2.68 | $268,00 |
| 500 | $2.42 | $1.210,00 |
| 1.000 | $2.15 | $2.150,00 |
MT40A512M8RH-075E:B Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family, sitting within the broader memory hierarchy of DRAM components used as main system memory in computing platforms. Compared to DDR3, DDR4 lowers the core supply voltage from 1.5V to 1.2V, doubles bank groups, and increases pre-fetch depth, delivering higher bandwidth at lower power per transfer.
Key features of this device include VDD = VDDQ = 1.2V +/-60mV operation, an auxiliary VPP supply of 2.5V (-125mV/+250mV) for the DRAM cell word-line drivers, and on-die internally generated and adjustable VREFDQ, which simplifies board design by removing the need for an external reference voltage rail. The 1.2V pseudo open-drain I/O structure reduces power consumption on high-activity data buses.
Architecturally, the part uses DDR4 bank-group interleaving to sustain high effective bandwidth, and supports refresh interval extensions at extended case temperature ranges. Internal VREFDQ generation improves signal-integrity margin and reduces BOM count.
Typical applications include industrial PC main memory, embedded controllers, networking equipment, test and measurement systems, and automotive infotainment platforms (via the AIT automotive variant family).
Design consideration: the DDR4-2666 speed grade requires careful length-matched routing and VTT termination on address/command lines; ball-map and layout guidance are provided in the Micron DDR4 datasheet and design guides.
This page synthesizes distributor pricing context, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для MT40A512M8RH-075E:B — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с MT40A512M8RH-075E:B (тот же форм-фактор и посадочное место) — отличается по Package, Interface, Memory Type, Data Rate, Operating Temperature.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
MT40A512M8RH-075E:B
✅ Прямая замена✓ В наличии
$2.15 / шт.
Открыть даташит →MT40A512M8RH-075E-IT:B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M8RH-075E-AIT:B
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M8RH-062E:B
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
AS4C512M8D4-75BIN
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M8RH-075E:B Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 4 Gbit |
| Организация памяти | 512M x 8 |
| Скорость передачи данных | 2666 MT/s (DDR4-2666) |
| Clock Frequency | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | 1.2 V +/-60 mV |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV |
| Тип интерфейса | Parallel |
| I/O Structure | 1.2V pseudo open-drain |
| Опорное напряжение | On-die internal adjustable VREFDQ generation |
| Корпус | 78-FBGA (9 x 10.5 mm), TFBGA |
| Тип монтажа | Surface Mount |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| Speed Grade Suffix | -075E |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) |
Руководство по цоколевке MT40A512M8RH-075E:B в корпусе 78-fbga (9 x 10.5 mm), tfbga
Цоколевка для MT40A512M8RH-075E:B (корпус 78-fbga (9 x 10.5 mm), tfbga). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для MT40A512M8RH-075E:B.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
MT40A512M8RH-075E:B подходит для 6 применениеs: Industrial Embedded Controller Main Memory, Networking and Communication Equipment, Automotive Infotainment and Telematics, Test and Measurement Instrumentation, Edge Computing and IoT Gateways, Server and Data Center Memory Subsystems.
Industrial Embedded Controller Main Memory
The MT40A512M8RH-075E:B provides 512MB of DDR4-2666 main memory for industrial PCs, PLCs, and embedded controllers, where its 1.2V VDD/VDDQ operation cuts memory-rail power versus DDR3 solutions. The 4Gb x8 organization suits single-chip memory banks in cost-sensitive controllers, and the on-die adjustable VREFDQ removes an external reference rail, reducing PCB layer count. Deployed between the CPU memory controller and VTT termination network, the pseudo open-drain I/O tolerates industrial bus loading while maintaining DDR4-2666 eye margins. For uncontrolled factory ambient conditions, the IT:B industrial-temperature variant should be selected on the same footprint.
Рекомендуется
Networking and Communication Equipment
Routers, switches, and network-attached processors require high-bandwidth packet buffering, and the MT40A512M8RH-075E:B delivers 2666 MT/s transfers with DDR4 bank-group interleaving to sustain line-rate packet throughput. Its 1.33 GHz clock domain matches mainstream network SoC memory controllers, and 1.2V pseudo open-drain I/O reduces power on heavily loaded data buses typical of multi-chip memory subsystems. Placed on length-matched fly-by topology address/command routing with on-die VREFDQ, the part maintains signal integrity in dense switch line-card layouts where board area and thermal budget are constrained.
Рекомендуется
Automotive Infotainment and Telematics
For automotive infotainment, cluster, and telematics head units, the MT40A512M8RH-075E-AIT variant provides the same 4Gb DDR4-2666 x8 core qualified for -40C to +95C operation. Its 1.2V supply and VPP word-line architecture align with automotive SoC memory-controller requirements, while on-die VREFDQ improves noise margin in electrically harsh vehicle environments. Designers should note Micron's catalog lists the AIT part as Obsolete as of 2026, so new automotive designs should verify lifecycle and last-time-buy windows, or evaluate the AAT automotive variant family before committing the same 78-FBGA footprint to production.
Рекомендуется
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators capture large waveform datasets, and the MT40A512M8RH-075E:B supplies 512MB per device at DDR4-2666 bandwidth for deep-memory capture architectures. The deterministic JEDEC DDR4 timing parameters (-075E speed grade) simplify memory-controller configuration in FPGA- or ASIC-based acquisition engines, and the 9 x 10.5 mm 78-FBGA footprint fits dense instrument mainboards. Because measurement platforms often operate in temperature-controlled lab environments, the commercial-grade :B part is sufficient, with the IT:B variant reserved for portable field instruments experiencing wider ambient swings.
Рекомендуется
Edge Computing and IoT Gateways
Edge AI gateways and industrial IoT hubs run Linux-class workloads needing 512MB to 1GB of DRAM, and the MT40A512M8RH-075E:B offers an efficient single-chip solution: 4Gb density, 2666 MT/s performance, and 1.2V operation that lowers total system power for fanless enclosures. The on-die VREFDQ generation reduces BOM cost in cost-optimized gateway designs, while the 78-FBGA package supports standard SMT reflow assembly. Pairing one or two of these DDR4 components with SPI NOR boot flash yields a complete, low-power edge memory subsystem on a compact PCB.
Рекомендуется
Server and Data Center Memory Subsystems
In data center applications such as storage controllers, BMC platforms, and NIC buffer memory, the MT40A512M8RH-075E:B provides certified-tier-one DRAM supply continuity at DDR4-2666 speeds. Its JEDEC-standard 78-FBGA ball map permits multi-sourcing against the Alliance Memory AS4C512M8D4-75BIN on the same PCB land pattern, a key supply-chain resilience feature for server OEMs. The 1.2V VDDQ rail integrates cleanly with server power trees, and the pseudo open-drain I/O sustains signal integrity across multi-rank, heavily loaded memory buses typical of controller card designs operating continuously in 24/7 racks.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для MT40A512M8RH-075E:B — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | MT40A512M8RH-075E:B | MT40A512M8RH-075E-IT:B | MT40A512M8RH-062E:B | AS4C512M8D4-75BIN |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Package | 78-FBGA (9 x 10.5 mm) | 78-FBGA (9 x 10.5 mm) - same | 78-FBGA (9 x 10.5 mm) - same | 78-FBGA (9 x 10.5 mm) - same | FBGA-78 JEDEC compatible - same |
| Density / Organization | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 | 4 Gbit / 512M x 8 |
| Data Rate | 2666 MT/s | 2666 MT/s | 2666 MT/s | 3200 MT/s | 2666 MT/s class |
| VDD / VDDQ | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V +/-60 mV | 1.2 V (JEDEC DDR4) |
| Temperature Grade | Commercial (standard) | Commercial (standard) | Industrial | Commercial (standard) | Industrial (per Alliance -IN suffix) |
| Lifecycle Status | Active | Active | Active | Active | Active (second source) |
Ключевые отличия
- Long-term tier-one supply from Micron (против AS4C512M8D4-75BIN)
- Automotive qualification path on identical footprint (против AS4C512M8D4-75BIN)
- Speed-grade headroom without PCB change (против MT40A512M8RH-062E:B)
- Lower temperature operating option for harsh environments (против MT40A512M8RH-075E:B (commercial))
Заметки по проектированию
DDR4-2666 operation requires fly-by termination of the address/command bus with VTT at 0.6V and length-matched DQ/DQS routing (intra-byte skew held within controller spec, typically +/-25 ps class). The on-die adjustable VREFDQ of the MT40A512M8RH-075E removes the external reference rail, but designers must still follow the Micron DDR4 datasheet layout guidelines for DQS strobe pair routing and keep stubs under 5 mm on data lines. Follow Micron's DDR4 point-to-point design guides for write-leveling and read-training expectations at -075E timings.
Estimate memory-rail power using VDD = 1.2V: at typical DDR4 idle-to-active current profiles for a 4Gb x8 device (order of 100-300 mA peak during bursts), plan a 1.2V rail with at least 1 A headroom per device plus VTT termination current. The VPP rail (2.5V, -125mV/+250mV) supplies word-line drivers and draws little dynamic current but must be present at power-up per DDR4 power-ramp sequencing - VDD and VDDQ must ramp together, with VPP ramping before or with VDD per the Micron datasheet power-up sequence.
Create the 78-ball FBGA footprint (9 x 10.5 mm ball grid, standard 0.8 mm pitch class per JEDEC DDR4 component packaging) directly from the ball map in the 365-page Micron DDR4 datasheet rather than from third-party footprints. Place 0.1 uF decoupling capacitors within 2 mm of VDD/VDDQ ball pairs on the bottom side, one per power pair minimum, plus bulk 10 uF per device. Use via-in-pad for the center thermal relief balls and keep the DQ/DQS escape fan-out symmetric to preserve length matching on 4-layer or 6-layer stackups.
Do not confuse suffix families: the -AIT automotive variant is listed Obsolete in Micron's catalog as of 2026, so automotive designs on this footprint must confirm last-time-buy windows or migrate to the AAT family. Also verify controller support before substituting the faster -062E part: while pin-compatible, DDR4-3200 timing mode requires a controller that supports it; at 2666 MT/s timings the -062E runs identically to the -075E. Finally, the :B suffix indicates a specific ball-map revision - confirm your footprint matches :B, not legacy ball maps.
Информация о соответствии
Compliance status not explicitly stated in the provided web data. The MT40A512M8RH-075E-AIT automotive variant is qualified for -40C to +95C per datasheet summary, but the standard :B part's AEC qualification is not stated - set to not_applicable for the base commercial part. Verify RoHS/REACH on Micron's official part-detail page.
