K4A4G085WG-BCWE - 4Gb DDR4 3200Mbps SDRAM | Samsung
Артикул: K4A4G085WG-BCWE ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $3.95 | $3,95 |
| 10 | $3.62 | $36,20 |
| 100 | $3.28 | $328,00 |
| 500 | $2.95 | $1.475,00 |
| 1.000 | $2.68 | $2.680,00 |
K4A4G085WG-BCWE Обзор
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a volatile memory technology in the DRAM hierarchy: SDRAM -> DDR SDRAM -> DDR4 -> main system memory. DDR4 transfers data on both clock edges, doubling effective bandwidth, and reduces operating voltage from DDR3's 1.5 V to 1.2 V, which lowers dynamic and standby power in memory subsystems.
Key features include the 3200 Mbps/pin maximum data rate (DDR4-3200 speed class), 512M x 8 organization suited to 8-bit memory buses, and low 1.2 V core supply. Samsung's D-die process improves density and power efficiency. The device operates in DLL-enabled mode as described in the manufacturer datasheet.
Architecturally, the chip uses internal bank groups and burst lengths of 8 (BL8), with standard DDR4 command/control, address, and data strobe signaling. The FBGA-78 ballout follows the JEDEC-style DDR4 x8 mapping used across Samsung's K4A4G085 family, enabling footprint reuse across speed-grade and die-revision variants.
Typical applications include desktop and embedded system main memory, industrial PCs, networking equipment line-card memory, set-top boxes, and memory modules (RDIMM/UDIMM) using x8 devices.
Design consideration: implement proper VDD/VDDQ decoupling, on-die termination (ODT) configuration, and DDR4 controller training (write leveling, read training) for reliable 3200 Mbps operation.
This page synthesizes distributor stock data, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Аналоги без доработки для K4A4G085WG-BCWE — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с K4A4G085WG-BCWE (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Refresh, Memory Type, Interface.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
K4A4G085WF-BCWE
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
K4A4G085WD-BCRC
✅ Прямая замена✓ В наличии
$3.58 / шт.
Открыть даташит →K4A4G085WD
✅ Прямая замена✓ В наличии
$2.05 / шт.
Открыть даташит →MT40A512M8RH-075E:B
✅ Прямая замена✓ В наличии
$2.15 / шт.
Открыть даташит →K4A4G045WD-BCRC
✅ Прямая замена✓ В наличии
$3.45 / шт.
Открыть даташит →K4A4G085WG-BCWE Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM (Volatile) |
| Размер памяти | 4 Gb |
| Memory Organization | 512M x 8 |
| Скорость передачи данных | 3200 Mbps/pin |
| Speed Class | DDR4-3200 |
| Supply Voltage (VDD) | 1.2 V |
| Technology | D-die DDR4 |
| Корпус | FBGA-78 (BCW) |
| Тип монтажа | Surface Mount |
| Интерфейс | Parallel (DDR4) |
| Burst Length | BL8 |
| DLL Mode | DLL Enabled (per datasheet timing) |
| Статус RoHS | Compliant |
| Packaging | Tray |
Руководство по цоколевке K4A4G085WG-BCWE в корпусе fbga-78 (bcw)
Цоколевка для K4A4G085WG-BCWE (корпус fbga-78 (bcw)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для K4A4G085WG-BCWE.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
K4A4G085WG-BCWE подходит для 6 применениеs: Desktop and Embedded PC Main Memory, Networking Equipment Line-Card Memory, DDR4 UDIMM and RDIMM Module Manufacturing, Set-Top Box and Smart TV Platforms, Industrial Automation and HMI Systems, Gaming Consoles and Graphics Add-in Cards.
Desktop and Embedded PC Main Memory
The K4A4G085WG-BCWE's 4 Gb density and 512M x 8 organization make it a natural soldered-down main-memory device for desktop motherboards, industrial PCs, and embedded x86 platforms. Its DDR4-3200 data rate supports modern memory controllers, while the 1.2 V supply cuts memory-subsystem power roughly 25% versus DDR3 equivalents, reducing thermal load in fanless enclosures. Placed as individual components around the CPU in a fly-by or topology-matched x8 bus, the chip relies on controller training (write leveling, read gating) to hit 3200 Mbps. Designers should follow the datasheet's DLL-enabled timing parameters and keep trace-length skew within controller budgets for stable operation at full speed.
Рекомендуется
Networking Equipment Line-Card Memory
Routers, switches, and network appliances use DDR4 x8 SDRAMs such as the K4A4G085WG-BCWE for packet buffers, routing tables, and control-plane memory. The 3200 Mbps/pin bandwidth supports high-throughput forwarding engines, and 4 Gb per device allows flexible density scaling across multiple packages on one 64-bit bus. The solder-down FBGA-78 package withstands vibration and thermal cycling in telecom racks better than socketed modules. Designers should implement ODT settings and address/command termination per the Samsung datasheet, and verify read/write margin under worst-case temperature because buffer traffic patterns create sustained thermal load that shifts DRAM timing.
Рекомендуется
DDR4 UDIMM and RDIMM Module Manufacturing
Module houses building 8-bit-wide or x8-based UDIMMs/RDIMMs use the K4A4G085WG-BCWE as a commodity component: nine devices provide 4 GB with ECC, or eight devices provide 4 GB without ECC. Its 512M x 8 organization and FBGA-78 footprint match standard DDR4 module land patterns, and the DDR4-3200 bin supports mainstream PC4-25600 modules. Samsung's D-die process yields consistent training behavior across large volumes, important for automated module test. Producers should confirm all devices on a module share identical die revision and speed bin per the SPD data, since mixed bins degrade module performance to the slowest component's grade.
Рекомендуется
Set-Top Box and Smart TV Platforms
Consumer set-top boxes and smart TVs employ DDR4 x8 SDRAMs for application memory alongside SoC integrated memory controllers. The K4A4G085WG-BCWE's 4 Gb capacity covers Linux-based middleware, channel buffering, and graphics frame buffers, while its 1.2 V operation supports ENERGY STAR-oriented power budgets. Soldered-down FBGA-78 mounting eliminates module sockets, lowering BOM cost for high-volume consumer builds. Designers should place the DRAM close to the SoC to keep fly-by stubs short at 3200 Mbps, apply series termination where the SoC reference design requires it, and validate memory training across the consumer temperature range and boot-cycle conditions.
Рекомендуется
Industrial Automation and HMI Systems
Industrial controllers, HMIs, and edge gateways use the K4A4G085WG-BCWE for reliable soldered-down memory in environments with vibration, dust, and wide temperature swings where SO-DIMM sockets are unreliable. The 4 Gb 512M x 8 configuration supports real-time OS images, data logging buffers, and remote I/O tables, and DDR4-3200 headroom lets systems run at derated clocks with large timing margin. The 1.2 V rail simplifies integration with industrial point-of-load regulators. Apply conformal coating compatible with FBGA packages, follow the Samsung datasheet's power-up initialization sequence precisely, and extend controller refresh settings if operating near temperature limits.
Рекомендуется
Gaming Consoles and Graphics Add-in Cards
Game consoles, arcade systems, and embedded graphics platforms use DDR4 x8 SDRAMs as shared system/framebuffer memory where GDDR is unnecessary. The K4A4G085WG-BCWE's 3200 Mbps/pin rate delivers 25.6 GB/s per 64-bit channel, adequate for 1080p-class rendering and texture streaming, while 4 Gb per device enables 4-8 GB configurations with moderate BOM cost. Multiple x8 devices populate both sides of a tight PCB, so designers must manage fly-by topology, on-die termination, and read-DBI settings per the Samsung datasheet. Thermal design matters: FBGA packages under sustained graphics load need copper pour or airflow to stay within datasheet temperature limits.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для K4A4G085WG-BCWE — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | K4A4G085WF-BCWE | K4A4G085WD-BCRC | MT40A512M8RH-075E:B | K4A4G045WD-BCRC |
|---|---|---|---|---|---|
| Package | FBGA-78 | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same | FBGA-78 - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology | Samsung Electronics |
| Memory Size | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 4 |
| Data Rate | 3200 Mbps | 3200 Mbps | 2666 Mbps | 2666-3200 Mbps class (-075E) | 2666 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
Ключевые отличия
- Highest speed grade in the 4 Gb x8 family (против K4A4G085WD-BCRC)
- Newer D-die process (против K4A4G085WF-BCWE)
- x8 organization simplifies 64-bit buses (против K4A4G045WD-BCRC)
Заметки по проектированию
DDR4 x8 layouts at 3200 Mbps require fly-by clock/address routing with per-byte-lane length matching for DQ/DM/DQS (typical skew budgets are on the order of a few ps per mil mismatch - follow your controller vendor's layout guide). Use solid VDD/VDDQ planes, at least one 0.1 uF ceramic capacitor per supply ball plus bulk capacitance per Samsung datasheet recommendations. Keep the K4A4G085WG-BCWE within 2-3 inches of the controller at full speed; longer traces need ODT and drive-strength tuning via mode registers.
DDR4 devices must follow the exact power-up initialization and mode-register programming sequence in the Samsung datasheet; skipping ZQ calibration (ZQCL) or improper MRS sequencing causes intermittent failures that appear only at temperature extremes. Also, controller memory training tables are die-revision specific - if you second-source to MT40A512M8RH-075E:B or K4A4G085WD-BCRC, regenerate SPD/training data and re-run full margin testing rather than assuming parameter interchange.
Estimated: at DDR4-3200 with typical activity, a 4 Gb x8 device draws roughly several hundred milliamps from the 1.2 V rail (exact ICC depends on the datasheet ICC curves and your access pattern). Budget the VDD rail with margin above worst-case ICC, place bulk capacitance near each device group, and verify VDD droop during simultaneous burst writes - transient droop below VDD minimum can corrupt in-flight data even if average current is well within budget.
Информация о соответствии
RoHS/lead-free status reflects standard Samsung DDR4 production. Explicit REACH, halogen-free, and conflict-minerals declarations were not present in the provided data - obtain compliance certificates directly from Samsung.
