SRF8S9260HSR3 - 75W 920-960MHz RF Power MOSFET | NXP
料号： SRF8S9260HSR3 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $145 | $145.00 |
| 10 | $132 | $1,320.00 |
| 100 | $118.5 | $11,850.00 |
| 500 | $105 | $52,500.00 |
| 1,000 | $92.5 | $92,500.00 |
SRF8S9260HSR3 概述
An RF power MOSFET (metal-oxide-semiconductor field-effect transistor) is a discrete lateral power device optimized for high-frequency amplification in the HF/VHF/UHF/microwave bands. Internally it integrates a large gate-periphery structure with low parasitic capacitances so it can deliver tens to hundreds of watts at GHz-range switching speeds. In the system hierarchy, it sits below the transceiver and above the antenna: the digital baseband is upconverted, mixed to RF, then amplified by the power MOSFET before reaching the duplexer and antenna. NXP's HV8 lateral process gives this family its 28 V operation and broadband 865-960 MHz coverage.
Key electrical features include 28 V drain-source operating voltage, 1.7 A typical quiescent drain current, and 18.6 dB small-signal gain at 960 MHz in a Class-AB reference circuit. The device can be biased for Class AB (linear) or Class C (high-efficiency) operation, allowing designers to trade spectral regrowth against DC-RF efficiency depending on the modulation format. Internal matching and an integrated thermal sensor pad simplify board-level integration.
Typical applications include W-CDMA, LTE, and multicarrier GSM base-station power amplifiers, RFID interrogators, and industrial RF heating where the same 28 V HV8 platform is reused across multiple bands.
When designing with this part, maintain a copper/thermal compound interface under the ceramic flange to keep the die below 200 degrees C, and verify load-pull impedance at the target frequency because the optimal matching network drifts between 865 MHz and 960 MHz.
This page synthesizes distributor pricing, same-brand drop-in alternatives from the MRF8S family, and practical RF design notes beyond what is found in the manufacturer datasheet alone.
直接替换替代料： SRF8S9260HSR3 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： SRF8S9260HSR3 （相同外形与封装尺寸） ——差异在于 Mounting Type.
快速对比工具——选择替代料号进行并排对比：
MRF8S9260HSR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8S9260HR3
✅ 直接替换📋 参考替代料（不在目录中）
MRF8S9170HSR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF8S9102HSR3
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
MRF8S9220HSR3
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$96.8 / 个
查看数据手册 →SRF8S9260HSR3 最大额定值与电气特性
| Manufacturer | NXP Semiconductors (Freescale legacy) |
| Part Family | MRF8S9260 / SRF8S9260 HV8 series |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET |
| Application Band | 920-960 MHz (usable 865-960 MHz) |
| Output Power (Avg) | 75 W (W-CDMA, 28 V) |
| Drain-Source Voltage (VDS) | 28 V |
| Quiescent Drain Current (IDQ) | 1.7 A typical |
| Power Gain (Gps) | 18.6 dB at 960 MHz |
| 封装 | NI-880S (ceramic, flanged) |
| 安装类型 | Screw-mount, flange |
| Operating Mode | Class AB or Class C |
| Modulation Targets | CDMA, W-CDMA, multicarrier GSM |
| RoHS 状态 | Compliant |
| Lead-Free | Yes |
SRF8S9260HSR3 引脚配置
| 引脚 1 | Gate — RF input gate lead (top row) |
| 引脚 2 | Drain — RF output drain lead (top row) |
| 引脚 3 | Source — Source lead (top row, internally bonded to flange) |
| 引脚 4 | Gate — Gate lead (bottom row, dual gate for symmetry) |
| 引脚 5 | Drain — Drain lead (bottom row) |
| 引脚 6 | Source — Source lead (bottom row) |
| 引脚 Flange | Source / Thermal Pad — Copper flange - primary source connection and thermal mounting surface |
安全工作区 (28 V operation)
典型应用
SRF8S9260HSR3 适用于 6 应用s: W-CDMA Cellular Base Station PA, Multicarrier GSM Power Amplifier, LTE Band 8 (900 MHz) Macro-Cell PA, RFID and Industrial RF Heating, Private LTE / Public-Safety Network PA, Broadcast FM Gap-Filler Repeater.
W-CDMA Cellular Base Station PA
The SRF8S9260HSR3 delivers 75 W average at 920-960 MHz from 28 V, suiting macro-cell W-CDMA final-stage PAs where linearity and ruggedness are required. Its 18.6 dB gain at 960 MHz in a Class-AB reference circuit lets a single device drive an antenna chain without an additional driver stage, simplifying the RF line-up. The NI-880S ceramic flange bolts directly to a heatsink or PCB copper coin, holding junction temperature below 200 degrees C under CW load. Compared to a smaller-package 10 W LDMOS, this part trades efficiency headroom for higher per-device output, reducing combiner complexity in multi-sector antenna arrays.
推荐
Multicarrier GSM Power Amplifier
For multicarrier GSM base stations operating in the 900 MHz band, the SRF8S9260HSR3 provides the linear headroom and thermal margin required when multiple carriers are summed at the antenna. The device can be biased into Class AB for the GSM linearized path or Class C for the CW/constant-envelope drive stage, letting the designer trade spectral regrowth against DC efficiency per carrier. The 28 V HV8 process delivers high breakdown voltage so two-carrier or four-carrier combining is possible without derating the safe operating area. Its broadband 865-960 MHz coverage supports re-tuning for both GSM900 and cellular IoT extensions.
推荐
LTE Band 8 (900 MHz) Macro-Cell PA
LTE Band 8 deployments at 925-960 MHz map directly to the SRF8S9260HSR3's operating window, making it a viable final-stage LDMOS for outdoor macro-cell eNodeB radios. The 75 W average rating supports 2x2 or 4x4 MIMO configurations where each chain needs roughly 40 W to hit a 46 dBm EIRP target after antenna combining. The lateral MOSFET architecture gives better gain linearity across the LTE resource-block bandwidth than older bipolar parts, lowering ACLR at high PAR. Designers reusing existing 28 V PA bays can drop the SRF8S9260HSR3 into the same NI-880S footprint with no thermal re-work.
推荐
RFID and Industrial RF Heating
UHF RFID interrogators and industrial RF heating systems operating at 865-960 MHz can leverage the SRF8S9260HSR3's broadband match and high CW power capability. In Class C bias the part delivers higher DC-RF efficiency than in linear mode, which directly reduces cooling requirements for continuous-duty industrial installations. The 28 V supply rail matches common industrial 24-30 V DC bus designs, simplifying power-conversion. The NI-880S ceramic package is mechanically rugged for vibration-prone factory environments, and its flange mounting accommodates cold-plate or fan-cooled heatsinks.
推荐
Private LTE / Public-Safety Network PA
Private LTE and public-safety broadband networks (Band 8, Band 20, Band 28 uplink portions) cluster around 900 MHz and benefit from the SRF8S9260HSR3's 75 W average power. Mission-critical infrastructure demands thermal headroom and gain stability across temperature extremes (-40 to +85 C ambient) - both of which the HV8 lateral process delivers when the heatsink is correctly sized. Using the SRF8S9260HSR3 as a final stage allows system integrators to standardize on one PA module that supports both commercial cellular and private-network deployments, reducing SKU count. Its NI-880S footprint matches older Freescale macro-PAs, easing field upgrades.
推荐
Broadcast FM Gap-Filler Repeater
Although primarily a cellular part, the SRF8S9260HSR3's broadband 865-960 MHz capability makes it usable as a final-stage LDMOS in FM broadcast gap-filler or translator service near 88-108 MHz when combined with appropriate matching. The high continuous-duty rating supports the always-on nature of broadcast transmitters, and the Class C bias mode maximizes wall-plug efficiency for 24/7 operation. The NI-880S ceramic package accepts standard broadcast PA heatsinks and RF connectors. Designers should re-do load-pull matching because the optimal impedance at 100 MHz differs substantially from 900 MHz, but the die itself is not the limiting factor.
推荐
推荐产品汇总
工程参考数据： SRF8S9260HSR3 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | MRF8S9260HSR3 | MRF8S9260HR3 | MRF8S9170HSR3 | MRF8S9102HSR3 | MRF8S9220HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-880S | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same | NI-880S - same |
| Operating Band | 920-960 MHz | 920-960 MHz | 920-960 MHz | 900-930 MHz | 865-895 MHz | 920-960 MHz |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Ordering Code Prefix | SRF (legacy Freescale) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) | MRF (NXP current) |
| Lifecycle Status | active (legacy code, supported via Rochester/legacy stock) | active | active | active | active | active |
关键差异点
- Legacy Freescale SRF ordering code still actively stocked （对比 MRF8S9260HSR3)
- Single part covers both 920-960 MHz cellular and adjacent bands （对比 MRF8S9102HSR3)
- 75 W average at 28 V in Class AB （对比 MRF8S9170HSR3)
设计说明
Estimated: at Pout = 75 W and drain efficiency = 50%, the SRF8S9260HSR3 dissipates roughly 75 W as heat in CW operation. The NI-880S junction-to-flange thermal resistance is approximately 0.35 C/W, so a 75 W dissipation produces a 26 C junction-to-flange rise; with 25 C ambient and a 0.15 C/W heatsink, the junction sits near 63 C - well below the 200 C maximum but with thin margin under W-CDMA peaks. Use a fan-forced heatsink or a copper-coin PCB plus bolt-down flange to keep Tj below 150 C for long-term reliability.
The NI-880S source lead is internally bonded to the copper flange, so the mounting bolts must make low-inductance RF ground contact with the PCB copper coin. Solder the copper coin to a continuous ground plane using multiple vias, and keep the gate and drain traces short and 50 ohm matched. Use a microstrip or stripline board stack-up with 0.5-1.0 oz copper and a low-loss dielectric (Rogers RO4350B or equivalent) to preserve the 18.6 dB gain at 960 MHz.
Do not exceed VDS = 65 V (absolute maximum) or apply 28 V without a soft-start sequence, because in-rush current can trigger the avalanche breakdown. The datasheet's Class-AB reference circuit uses IDQ = 1.7 A; biasing significantly above this shifts the gain and efficiency curves. Always verify load-pull impedance at the target frequency - optimal match at 865 MHz is not the same as at 960 MHz, and a copy-pasted reference design may need board-level retuning.
Add a 10 nF ceramic bypass capacitor on the drain supply lead as close as possible to the package pin to suppress RF leakage back into the 28 V rail. Use a feed-through or lambda/4 stub to keep RF out of the bias-T network. Ferrite beads on the gate bias line help prevent parametric oscillation in Class AB, which is a common failure mode for HV8 LDMOS parts.
合规信息
RoHS and lead-free confirmed per NXP product page. AEC-Q100 not applicable for RF power MOSFET. Halogen-free status not explicitly listed in available data.
