10AX090N2F45E2LG vs 10AX090N3F40E2LG Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 10AX090N2F45E2LG sa pamamagitan ng Intel at 10AX090N3F40E2LG sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | 10AX090N2F45E2LG | 10AX090N3F40E2LG |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Arria 10 GX | Arria 10 GX |
| Logic Elements | 900,000 | 900,000 |
| Embedded Memory (bits) | 59,234,304 | — |
| Adaptive Logic Modules (ALMs) | [DATA_NEEDED: ALM count] | [DATA_NEEDED: ALM count] |
| User I/O Pins | 768 | 600 |
| Core Voltage | 0.9 V | 0.9 V typical |
| Transceivers | [DATA_NEEDED: transceiver count and data rate] | Up to 24 full-duplex channels |
| DSP Blocks | [DATA_NEEDED: DSP block count] | 1,518 |
| PLLs | [DATA_NEEDED: PLL count] | — |
| Process Technology | 20 nm | TSMC 20nm |
| Packhaging | 1932-ball FCBGA (FBGA) | 1517-ball FCBGA, 40 mm |
| Package Type | Flip-Chip BGA, surface mount | — |
| Operating Temperature Grade | Enhanced (E2) | — |
| Lead-Free / RoHS | Yes (per part suffix LG) | — |
| Configuration Memory | SRAM-based, volatile (external flash required) | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Katayuan ng Lifecycle | Active | — |
| Embedded Memory | — | 59,234,304 bits |
| Transceiver Data Rate | — | Up to 14.4 Gbps |
| Hard Memory Controllers | — | Yes (DDR4, DDR3, QDR IV, RLDRAM 3) |
| Maximum DDR4 Rate | — | 2666 Mbps |
| PCIe Hard IP | — | PCIe Gen3 x8 (root port or endpoint) |
| Temperature na Operasyon | — | -40C to +100C (extended industrial) |
| Configuration Encryption | — | AES-256 bitstream encryption |
| Partial Reconfiguration | — | Supported |
| Tindminan RoHS | — | Compliant |