1ED3890MC12MXUMA1 vs 2ED21064S06JXUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng 1ED3890MC12MXUMA1 sa pamamagitan ng Infineon at 2ED21064S06JXUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
1ED3890MC12MXUMA1 - 5.7kV Isolated Gate Driver, ±9A | Infineon
1ED3890MC12MXUMA1 ✓ NakahandaInfineon
2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
2ED21064S06JXUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | 1ED3890MC12MXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Peak Output Current (Source/Sink) | ±9 A | — |
| Number of Channels | 1 | — |
| Output Kumpigurasyon | High-Side Non-Inverting | — |
| Packhaging | PG-DSO-16-28 (16-pin wide-body DSO) | PG-DSO-14 (14-pin SOIC) |
| Uri ng Pagpapasok | Surface Mount (Tape & Reel) | Surface Mount |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) | — |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO | — |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI rating] | — |
| Supply Voltage (VCC side) | [DATA_NEEDED: VCC range] | — |
| Output Drive Voltage (VOUT) | [DATA_NEEDED: VOUT range] | — |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | — |
| Fungsi | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| Topolohiya | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| Temperature na Operasyon | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |