1ED3890MC12MXUMA1 vs 2ED21064S06JXUMA1 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ 1ED3890MC12MXUMA1 بواسطة Infineon و 2ED21064S06JXUMA1 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | 1ED3890MC12MXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | Power MOSFET Drivers | Power MOSFET Drivers |
| حالة دورة الحياة | نشط | نشط |
| Isolation Voltage (Vrms) | 5700 Vrms | — |
| Peak Output Current (Source/Sink) | ±9 A | — |
| Number of Channels | 1 | — |
| تكوين الخرج | High-Side Non-Inverting | — |
| العلبة | PG-DSO-16-28 (16-pin wide-body DSO) | PG-DSO-14 (14-pin SOIC) |
| نوع التركيب | Surface Mount (Tape & Reel) | Surface Mount |
| Isolation Technology | Coreless transformer (galvanic) | — |
| Configurable Interface | I2C (DESAT, UVLO, drive voltage) | — |
| Protection Features | DESAT short-circuit, Active Miller clamp, Soft Turn-Off (STO), UVLO | — |
| Target Power Devices | IGBT, SiC MOSFET, MOSFET | — |
| نطاق درجة حرارة التشغيل | [DATA_NEEDED: operating temperature range] | — |
| Propagation Delay | [DATA_NEEDED: typical propagation delay] | — |
| Common-Mode Transient Immunity (CMTI) | [DATA_NEEDED: CMTI rating] | — |
| Supply Voltage (VCC side) | [DATA_NEEDED: VCC range] | — |
| Output Drive Voltage (VOUT) | [DATA_NEEDED: VOUT range] | — |
| حالة RoHS | Compliant | ROHS3 Compliant |
| مستوى MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | — |
| الوظيفة | — | High-Side and Low-Side Gate Driver |
| Configuration | — | Half-Bridge (2 outputs, non-inverting) |
| البنية الطوبولوجية | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Bootstrap Diode | — | Integrated |
| Input Logic Compatibility | — | 3.3 V / 5 V CMOS |
| درجة حرارة التشغيل | — | -40C to +125C |
| Negative Gate Drive Robustness | — | -0.7 V |