1EDN7550BXTSA1 vs 1EDN7146GXTMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng 1EDN7550BXTSA1 sa pamamagitan ng Infineon at 1EDN7146GXTMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
1EDN7146GXTMA1 1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon

1EDN7146GXTMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro 1EDN7550BXTSA1 1EDN7146GXTMA1
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Driver Configuration Single-channel, high-side / low-side —
Input Type Non-inverting, truly differential TDI (Truly Differential Inductor)
Peak Source Current 4 A —
Peak Sink Current 8 A —
Supply Voltage (VDD max) 84 V —
Minimum Input Pulse Width 29 ns —
Propagation Delay (typ.) [DATA_NEEDED: propagation delay value] —
Input Common-Mode Range Up to 150 V —
Channel-to-Channel Matching 1.0 ns typ. —
Internal Regulator 4.7 V on input side —
Logic Input Compatibility TTL / CMOS —
Under-Voltage Lockout (UVLO) Yes —
Temperature ng Junction na Operasyon -40 °C to +150 °C —
Packhaging PG-SOT23-6 (SOT-23-6) PG-VSON-10-4
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL level] 1
Tindminan RoHS Compliant Compliant
Driver Type — High-side, single-channel
Number of Drivers — 1
Logic Type — Non-Inverting
Maximum Bootstrap Voltage (VB) — 200 V
Supply Voltage (VCC) — 4.5 V to 20 V
Source/Sink Drive Current — 500 mA / 500 mA
Gate Drive Voltage — Up to 11 V (typ)
Propagation Delay (typ) — 40 ns
Rise/Fall Time (typ) — [DATA_NEEDED: rise/fall time]
UVLO (VCC) — Yes
UVLO (VB) — Yes
Bootstrap Diode — Integrated
Temperature na Operasyon — -40 C to +125 C

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