AT25DF081A-SH-B vs AT25DF641A-SH-T Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng AT25DF081A-SH-B sa pamamagitan ng Renesas Electronics at AT25DF641A-SH-T sa pamamagitan ng Renesas Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Renesas Electronics
AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas
AT25DF081A-SH-B ✓ NakahandaRenesas Electronics
AT25DF641A-SH-T - 64Mbit SPI/Quad SPI NOR Flash, SOIC-8 | Renesas
AT25DF641A-SH-T NrndPagsanggunian na paghahambing
| Parametro | AT25DF081A-SH-B | AT25DF641A-SH-T |
|---|---|---|
| Brand | Renesas Electronics | Renesas Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | NRND |
| Uri ng Memory | Serial NOR Flash | NOR Flash |
| Memory Density | 8 Mbit (1 Mbyte) | — |
| Memory Organization | 4K x 256 bytes | — |
| Interface | SPI (Single/Dual), Mode 0 and Mode 3 | SPI (Single/Dual I/O), Serial Peripheral Interface compatible |
| Maksimum na Taktiko ng Oras | 100 MHz | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V (single supply) |
| Temperature na Operasyon | -40C to +85C | -40 C to +85 C (industrial) |
| Packhaging | 8-SOIC (SOIC-W, 208 mil) | 8-SOIC (SOIC-W 208 mil, "SH") |
| Sector / Block Erase Sizes | 4 KB / 32 KB / 64 KB uniform | — |
| Page Program Size | 1 to 256 bytes | — |
| Endurance | 100,000 erase/program cycles per sector | — |
| Data Retention | >20 years | [DATA_NEEDED: data retention years] |
| Security Registers | Three 256-byte Security Register pages | — |
| SFDP Support | Yes (JEDEC 216 standard) | — |
| Write Protection | Hardware WP pin plus BP0-BP2 status-register bits | — |
| Tindminan RoHS | Compliant | Compliant (Green) |
| Density | — | 64 Mbit (8 MB) |
| Clock Frequency (max) | — | 100 MHz (Single-I/O) |
| Uri ng Pagpapasok | — | Surface Mount |
| Page Size (program) | — | 256 bytes |
| Sector Erase Sizes | — | 4 KB / 32 KB / 64 KB uniform |
| Sector Architecture | — | Uniform 4 KB sectors |
| Deep Power-Down Current | — | [DATA_NEEDED: typical deep power-down current in uA] |
| Active Read Current | — | [DATA_NEEDED: active read current in mA] |
| Program/Erase Endurance | — | [DATA_NEEDED: endurance cycles] |
| Write-Protect Pin | — | Yes (/WP) |
| Hold Pin | — | Yes (/HOLD) |
| JEDEC ID Read | — | Yes |
| Level ng MSL | — | 3 (per JEDEC J-STD-020, typical for SOIC flash) |
| Lead-Free | — | Yes |
| Katayuan ng Lifecycle | — | Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T |
| Packaging | — | Tape & Reel (suffix -T) |