AT25DF081A-SH-B vs AT25DF641A-SH-T 比較

詳細並排比較 AT25DF081A-SH-B 由 Renesas Electronics 與 AT25DF641A-SH-T 由 Renesas Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Renesas Electronics
AT25DF081A-SH-B AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas

AT25DF081A-SH-B - 8Mbit SPI NOR Flash 100MHz | Renesas

AT25DF081A-SH-B ✓ 啟用中

規格比較

參數 AT25DF081A-SH-B AT25DF641A-SH-T
品牌 Renesas Electronics Renesas Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 NRND
記憶體類型 Serial NOR Flash NOR Flash
Memory Density 8 Mbit (1 Mbyte) —
Memory Organization 4K x 256 bytes —
介面 SPI (Single/Dual), Mode 0 and Mode 3 SPI (Single/Dual I/O), Serial Peripheral Interface compatible
最大時脈頻率 100 MHz —
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V (single supply)
工作溫度 -40C to +85C -40 C to +85 C (industrial)
封裝 8-SOIC (SOIC-W, 208 mil) 8-SOIC (SOIC-W 208 mil, "SH")
Sector / Block Erase Sizes 4 KB / 32 KB / 64 KB uniform —
Page Program Size 1 to 256 bytes —
Endurance 100,000 erase/program cycles per sector —
Data Retention >20 years [DATA_NEEDED: data retention years]
Security Registers Three 256-byte Security Register pages —
SFDP Support Yes (JEDEC 216 standard) —
Write Protection Hardware WP pin plus BP0-BP2 status-register bits —
RoHS 狀態 Compliant Compliant (Green)
Density — 64 Mbit (8 MB)
Clock Frequency (max) — 100 MHz (Single-I/O)
安裝類型 — Surface Mount
Page Size (program) — 256 bytes
Sector Erase Sizes — 4 KB / 32 KB / 64 KB uniform
Sector Architecture — Uniform 4 KB sectors
Deep Power-Down Current — [DATA_NEEDED: typical deep power-down current in uA]
Active Read Current — [DATA_NEEDED: active read current in mA]
Program/Erase Endurance — [DATA_NEEDED: endurance cycles]
Write-Protect Pin — Yes (/WP)
Hold Pin — Yes (/HOLD)
JEDEC ID Read — Yes
MSL 等級 — 3 (per JEDEC J-STD-020, typical for SOIC flash)
Lead-Free — Yes
生命週期狀態 — Not Recommended for New Designs (NRND), see AT25QF641B-SHB-T
Packaging — Tape & Reel (suffix -T)

資料表與資源

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