ATSAMG55J19A-MU vs ATSAMG55J19A-AU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng ATSAMG55J19A-MU sa pamamagitan ng Microchip Technology at ATSAMG55J19A-AU sa pamamagitan ng Microchip Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Microchip Technology
ATSAMG55J19A-MU - Cortex-M4 MCU 120MHz 512KB Flash 64-QFN | Microchip
ATSAMG55J19A-MU ✓ NakahandaMicrochip Technology
ATSAMG55J19A-AU - 120MHz Cortex-M4 MCU 512KB Flash | Microchip
ATSAMG55J19A-AU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | ATSAMG55J19A-MU | ATSAMG55J19A-AU |
|---|---|---|
| Brand | Microchip Technology | Microchip Technology |
| Kategorya | Microcontrollers | Microcontrollers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Core Processor | ARM Cortex-M4F (with FPU) | — |
| Core Size | 32-Bit | — |
| Maximum CPU Speed | 120 MHz | — |
| Program Memory Size | 512 KB Flash | — |
| RAM Size | Up to 176 KB SRAM | — |
| Volte ng Pagbibigay | 3.0 V to 3.6 V | — |
| Temperature na Operasyon | -40C to +85C (Industrial) | -40 C to +85 C (industrial) |
| Packhaging | 64-pin QFN (7.5x7.5 mm) | 64-LQFP (10x10 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| USB Interface | USB 2.0 Full-Speed with on-chip PHY | — |
| Audio Interface | I2S / TDM (up to 2 instances) | I2S with PDM/TDM and sample-rate converter |
| ADC | [DATA_NEEDED: ADC resolution and channel count] | 12-bit SAR |
| Active Current (picoPower) | 100 uA/MHz | — |
| Deep Sleep Current | <7 uA with SRAM retention | Below 7 uA with SRAM retention |
| Wake-up Time | Down to 3 us from deep sleep | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL moisture sensitivity level] | — |
| Core Architecture | — | ARM Cortex-M4 with FPU |
| Core Clock Speed (max) | — | 120 MHz |
| Instruction Set | — | 32-bit RISC + DSP extensions + FPU (single-precision) |
| Program Flash Memory | — | 512 KB (512K x 8) |
| SRAM (Total) | — | 160 KB |
| Backup SRAM with Retention | — | 16 KB (retained in deep sleep) |
| Supply Voltage (VDDIO/VDDCORE) | — | 1.62 V to 3.6 V |
| USB | — | USB 2.0 Full-Speed device/host |
| Communication Peripherals | — | USART/UART, SPI, TWI (I2C), I2S, HS USB |
| External Bus Interface (EBI) | — | Yes (for SRAM/SDRAM/NOR Flash expansion) |
| Active Power Consumption | — | Down to 100 uA/MHz |
| Wake-up Time (deep sleep to first instruction) | — | Down to 3 us |
| Lifecycle / New Design Recommendation | — | Active (new designs: consider ATSAMG55J19B Revision B) |