BC817-40,215 vs BC817-40 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BC817-40,215 sa pamamagitan ng Nexperia at BC817-40 sa pamamagitan ng Nexperia. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Nexperia
BC817-40,215 BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BC817-40,215 BC817-40
Brand Nexperia Nexperia
Kategorya Transistors Transistors
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor NPN Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
Packhaging SOT-23 (TO-236AB) SOT-23 (TO-236AB), 3 pins
Uri ng Pagpapasok Surface Mount Surface Mount
Voltage ng Collector-Emitter (Vceo) 45 V 45 V
Voltage ng Collector-Base (Vcbo) 50 V 50 V
Voltage ng Emitter-Base (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) [DATA_NEEDED: peak collector current] [DATA_NEEDED: ICM value]
Pwersang Pinahihigpit (Ptot) 250 mW —
Dalas ng Transisyon (ft) 100 MHz 100 MHz
DC Current Gain (hFE) - BC817-40 bin 250 to 600 (at IC=100mA, VCE=1V) —
Hanay ng Temperature na Operasyon -65 C to +150 C (TJ) —
JEDEC Package Standard TO-236AB —
Pin Configuration Pin 1 Base / Pin 2 Emitter / Pin 3 Collector —
RoHS Compliance Compliant —
Lead-Free Reflow Yes (260 C peak per J-STD-020) —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
Temperature ng Junction na Operasyon — -65 C to +150 C
Level ng MSL — 1
Tindminan RoHS — Compliant
Complementary PNP Part — BC807-40

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