BC817-40,215 vs BC817-40 比較

詳細並排比較 BC817-40,215 由 Nexperia 與 BC817-40 由 Nexperia. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Nexperia
BC817-40,215 BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 - 45V 500mA NPN BJT SOT-23 | Nexperia

BC817-40,215 ✓ 啟用中

規格比較

參數 BC817-40,215 BC817-40
品牌 Nexperia Nexperia
類別 Transistors Transistors
生命週期狀態 啟用中 啟用中
電晶體類型 NPN Bipolar (BJT) NPN Bipolar Junction Transistor (BJT)
封裝 SOT-23 (TO-236AB) SOT-23 (TO-236AB), 3 pins
安裝類型 Surface Mount Surface Mount
集極-射極電壓 (Vceo) 45 V 45 V
集極-基極電壓 (Vcbo) 50 V 50 V
射極-基極電壓 (Vebo) 5 V 5 V
Continuous Collector Current (IC) 500 mA 500 mA
Peak Collector Current (ICM) [DATA_NEEDED: peak collector current] [DATA_NEEDED: ICM value]
功率耗散 (Ptot) 250 mW —
轉換頻率 (ft) 100 MHz 100 MHz
DC Current Gain (hFE) - BC817-40 bin 250 to 600 (at IC=100mA, VCE=1V) —
工作溫度範圍 -65 C to +150 C (TJ) —
JEDEC Package Standard TO-236AB —
Pin Configuration Pin 1 Base / Pin 2 Emitter / Pin 3 Collector —
RoHS Compliance Compliant —
Lead-Free Reflow Yes (260 C peak per J-STD-020) —
Total Power Dissipation (Ptot) — 310 mW
DC Current Gain (hFE) - -40 bin — 250 to 600 (at 100 mA, 1 V)
Collector-Emitter Saturation Voltage (VCEsat) — 700 mV max (at 500 mA, 50 mA base)
Base-Emitter Voltage (VBE) — [DATA_NEEDED: VBE typical]
工作接面溫度 — -65 C to +150 C
MSL 等級 — 1
RoHS 狀態 — Compliant
Complementary PNP Part — BC807-40

資料表與資源

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