BSC011N03LSATMA1 vs IPL60R065P7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSATMA1 sa pamamagitan ng Infineon at IPL60R065P7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC011N03LSATMA1 BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 - 30V 100A OptiMOS N-MOSFET | Infineon

BSC011N03LSATMA1 ✓ Nakahanda
Infineon
IPL60R065P7AUMA1 IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 - 600V 65mΩ CoolMOS P7 MOSFET | Infineon

IPL60R065P7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC011N03LSATMA1 IPL60R065P7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 30V —
Polarity N-Channel Single N-channel
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 100 A —
Continuous Drain Current (ID) at TA=25C 37 A —
Pulsed Drain Current (IDM) 100 A (TC) —
On-State Resistance (RDS(on)) at VGS=10V 1.1 mOhm (typ) —
Gate-Source Voltage (VGS) max +/-20 V —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.2 V (typ 1.6 V) —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (PD) at TC=25C 96 W —
Power Dissipation (PD) at TA=25C 2.5 W —
Hanay ng Temperature na Operasyon -55C to +150C -55 °C to +150 °C (T<sub>j</sub>)
Packhaging PG-TDSON-8-1 (SuperSO8) PG-VSON-4 (surface mount with exposed pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 1 (per JEDEC J-STD-020)
Tindminan RoHS Compliant Compliant
Technology Family — CoolMOS™ P7 (superjunction)
Drain-Source Voltage (V<sub>DS</sub>) — 600 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) — 41 A
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) — 65 mΩ (max)
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) — 201 W
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 3.5 V
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) — 2895 pF
Rise Time (t<sub>r</sub>) — 7 ns
Fall Time (t<sub>f</sub>) — 4 ns
Bilang ng Pins — 4
Channel Type — N-Channel
Drain to Source Voltage — 650 V (rating per AiEMA spec)
R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) — 0.053 Ω
Wala sa Halogen — Yes

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