BSC011N03LSATMA1 vs IPL60R065P7AUMA1 比較
詳細並排比較 BSC011N03LSATMA1 由 Infineon 與 IPL60R065P7AUMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC011N03LSATMA1 | IPL60R065P7AUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 30V | — |
| Polarity | N-Channel | Single N-channel |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Continuous Drain Current (ID) at TA=25C | 37 A | — |
| Pulsed Drain Current (IDM) | 100 A (TC) | — |
| On-State Resistance (RDS(on)) at VGS=10V | 1.1 mOhm (typ) | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V (typ 1.6 V) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation (PD) at TC=25C | 96 W | — |
| Power Dissipation (PD) at TA=25C | 2.5 W | — |
| 工作溫度範圍 | -55C to +150C | -55 °C to +150 °C (T<sub>j</sub>) |
| 封裝 | PG-TDSON-8-1 (SuperSO8) | PG-VSON-4 (surface mount with exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Technology Family | — | CoolMOS™ P7 (superjunction) |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 600 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 41 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | — | 65 mΩ (max) |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25 °C) | — | 201 W |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 3.5 V |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=400 V) | — | 2895 pF |
| Rise Time (t<sub>r</sub>) | — | 7 ns |
| Fall Time (t<sub>f</sub>) | — | 4 ns |
| 腳位數 | — | 4 |
| Channel Type | — | N-Channel |
| Drain to Source Voltage | — | 650 V (rating per AiEMA spec) |
| R<sub>DS(on)</sub> (max, V<sub>GS</sub>=10 V, T<sub>j</sub>=25 °C) | — | 0.053 Ω |
| 無鹵素 | — | Yes |