BSC016N06NSATMA1 vs IPD60R280P7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC016N06NSATMA1 sa pamamagitan ng Infineon at IPD60R280P7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | BSC016N06NSATMA1 | IPD60R280P7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Series | OptiMOS™ 5 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 600 V |
| Continuous Drain Current (ID, Tc) | 100 A | 12 A |
| Continuous Drain Current (ID, TA) | 30 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.6 mΩ | — |
| Total Gate Charge (Qg) | 71 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 4 V max @ ID = 190 µA |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 139 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +150 °C | — |
| Packhaging | PG-TDSON-8 FL (SuperSO8 5x6) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Gate Drive (recommended) | 10 V | — |
| Technology | OptiMOS™ 5 | CoolMOS P7 Superjunction (SJ) N-channel |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 280 mΩ (typical) |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Power Dissipation (Ptot, Tc) | — | 53 W |
| Operating Junction Temperature (TJ) | — | -40 °C to +150 °C |
| Series | — | CoolMOS P7 (7th generation, 600 V) |
| Integrated ESD Protection | — | Yes |