BSC023N08NS5SCATMA1 vs BSC117N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC023N08NS5SCATMA1 sa pamamagitan ng Infineon at BSC117N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC023N08NS5SCATMA1 BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon

BSC023N08NS5SCATMA1 ✓ Nakahanda
Infineon
BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 - 80V 49A OptiMOS 5 N-FET | Infineon

BSC117N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC023N08NS5SCATMA1 BSC117N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC023N08NS5SCATMA1 BSC117N08NS5ATMA1
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 202 A —
Power Dissipation (PD, Tc=25°C) 188 W —
On-State Resistance RDS(on) typ. 2.3 mΩ at VGS=10 V, ID=50 A —
Gate Threshold Voltage VGS(th) typ. 3.8 V —
Total Gate Charge Qg 98 nC at VGS=10 V —
Input Capacitance Ciss 6.8 nF —
Output Capacitance Coss 74 pF —
Thermal Resistance RthJC 0.72 K/W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8-7 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Tindminan RoHS Compliant Compliant
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 80 V
Continuous Drain Current (ID) max — 49 A (Tc)
On-State Resistance (RDS(on)) max — 11.7 mOhm
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 50 W
Bilang ng Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
Hanay ng Temperature na Operasyon — -55 C to +150 C (typical MOSFET junction)
Lead-Free — Yes
Level ng MSL — 1

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita