BSC023N08NS5SCATMA1 vs BSC117N08NS5ATMA1 比較
詳細並排比較 BSC023N08NS5SCATMA1 由 Infineon 與 BSC117N08NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ 啟用中
規格比較
| 參數 | BSC023N08NS5SCATMA1 | BSC117N08NS5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC023N08NS5SCATMA1 | BSC117N08NS5ATMA1 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 202 A | — |
| Power Dissipation (PD, Tc=25°C) | 188 W | — |
| On-State Resistance RDS(on) typ. | 2.3 mΩ at VGS=10 V, ID=50 A | — |
| Gate Threshold Voltage VGS(th) typ. | 3.8 V | — |
| Total Gate Charge Qg | 98 nC at VGS=10 V | — |
| Input Capacitance Ciss | 6.8 nF | — |
| Output Capacitance Coss | 74 pF | — |
| Thermal Resistance RthJC | 0.72 K/W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-WSON-8-2 (SuperSO8 DSC) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) max | — | 49 A (Tc) |
| On-State Resistance (RDS(on)) max | — | 11.7 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 50 W |
| 腳位數 | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| 工作溫度範圍 | — | -55 C to +150 C (typical MOSFET junction) |
| Lead-Free | — | Yes |
| MSL 等級 | — | 1 |