BSC027N06LS5ATMA1 vs BSC033N08NS5SCATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N06LS5ATMA1 sa pamamagitan ng Infineon at BSC033N08NS5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda
Infineon
BSC033N08NS5SCATMA1 BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N06LS5ATMA1 BSC033N08NS5SCATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 OptiMOS 5
Part Status Active —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) Trench (OptiMOS 5)
Drain-Source Voltage (VDS) 60 V 80 V
Gate-Source Voltage (VGS) ±20 V +/- 20 V
Gate Threshold Voltage (VGS(th)) Logic-level [DATA_NEEDED: VGS(th) typical value]
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] —
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +175C
Packhaging / Kaso PG-TDSON-8-7 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Continuous Drain Current (Tc) — 144 A
Power Dissipation (Tc) — 136 W
RDS(on) max @ VGS=10V — 3.3 mOhm
Thermal Resistance RthJC — 0.86 K/W
Packhaging — PG-WSON-8-2 (SuperSO8 DSC)
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical value]
Level ng MSL — 1

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