BSC027N10NS5ATMA1 vs BSC100N10NSFGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N10NS5ATMA1 sa pamamagitan ng Infineon at BSC100N10NSFGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC027N10NS5ATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC027N10NS5ATMA1 | — |
| Technology | OptiMOS 5 (100V) | MOSFET (Metal Oxide) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at Ta | 23 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | 194 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 2.7 mOhm | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 214 W | — |
| Packhaging | PG-TSON-8-3 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: Tj min/max] | -55C to +150C (junction) |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Qualification | Industrial (AEC-Q101 variant BSC027N10NS5 exists separately) | — |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |