BSC033N08NS5SCATMA1 vs BSC123N08NS3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC033N08NS5SCATMA1 sa pamamagitan ng Infineon at BSC123N08NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC033N08NS5SCATMA1 BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 - 80V 3.3mOhm N-Ch MOSFET | Infineon

BSC033N08NS5SCATMA1 ✓ Nakahanda
Infineon
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 - 80V 55A N-Ch OptiMOS 3 MOSFET | Infineon

BSC123N08NS3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC033N08NS5SCATMA1 BSC123N08NS3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (Tc) 144 A —
Power Dissipation (Tc) 136 W 66 W
RDS(on) max @ VGS=10V 3.3 mOhm —
Gate-Source Voltage (VGS) +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) value]
Thermal Resistance RthJC 0.86 K/W —
Packhaging PG-WSON-8-2 (SuperSO8 DSC) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon -55C to +175C —
Technology Trench (OptiMOS 5) —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] [DATA_NEEDED: Qg]
Tindminan RoHS Compliant Compliant with exemption
Level ng MSL 1 1 (per JEDEC J-STD-020)
Part Family — OptiMOS 3
Channel Type — N-Channel
Configuration — Single with built-in body diode
Maximum Drain-Source Voltage (VDS) — 80 V
Maximum Continuous Drain Current (ID, Tc) — 55 A
Maximum Continuous Drain Current (ID, Ta) — 11 A
Maximum Pulsed Drain Current — [DATA_NEEDED: pulsed drain current]
Maximum RDS(on) @ VGS=10 V — 12.3 mOhm
Maximum Gate-Source Voltage (VGS) — ±20 V
Power Dissipation (Ta) — 2.5 W
Temperature ng Junction na Operasyon — -55C to +150C
Automotive Qualified — Yes (AEC-Q101)

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