BSC042NE7NS3GATMA1 vs BSC100N10NSFGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC042NE7NS3GATMA1 sa pamamagitan ng Infineon at BSC100N10NSFGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC042NE7NS3GATMA1 | BSC100N10NSFGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 3 | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 75 V | 100 V |
| Continuous Drain Current (ID) at Ta | 19 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction) |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant | Compliant |
| Series | — | OptiMOS |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID), Ta | — | 11.4 A |
| Continuous Drain Current (ID), Tc | — | 90 A |
| Power Dissipation (PD), Tc | — | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | — | 10 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Drive Voltage (recommended) | — | 10 V (for rated RDS(on)) |