BSC059N04LS6ATMA1 vs BSC021N08NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC059N04LS6ATMA1 sa pamamagitan ng Infineon at BSC021N08NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC059N04LS6ATMA1 BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon

BSC059N04LS6ATMA1 ✓ Nakahanda
Infineon
BSC021N08NS5ATMA1 BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 - 80V 226A OptiMOS 5 N-MOSFET | Infineon

BSC021N08NS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC059N04LS6ATMA1 BSC021N08NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology OptiMOS 6 (N-channel MOSFET) OptiMOS 5 (N-channel trench)
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TA=25C 17 A —
Continuous Drain Current (ID) at TC=25C 49 A —
Pulsed Drain Current (ID,pulse) at TC=25C 59 A —
On-Resistance RDS(on) max 5.9 mOhm at VGS=10 V —
Total Power Dissipation at TA=25C 3 W —
Total Power Dissipation at TC=25C 38 W —
Gate-Source Voltage (VGS) max +/-20 V —
Hanay ng Temperature na Operasyon -55C to +150C —
Packhaging PG-TDSON-8-6 (SuperSO8 5x6 mm) SuperSO8 5x6 (PG-TSON-8-3)
Uri ng Pagpapasok Surface Mount Surface Mount
Diode Continuous Forward Current (IS) 38 A at TC=25C —
Diode Pulse Current (IS,pulse) 236 A at TC=25C —
Tindminan RoHS Compliant Compliant (Pb-free)
Lead-Free Yes —
Manufacturer — Infineon Technologies
Part Number — BSC021N08NS5ATMA1
Drain-Source Voltage (V_DS max) — 80 V
Continuous Drain Current (I_D, Tc=25°C) — 226 A
Continuous Drain Current (I_D, Tc=100°C) — 100 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
On-Resistance R_DS(on) max (V_GS=10 V) — 2.1 mΩ
Gate-Source Voltage V_GS max — ±20 V
Power Dissipation P_D (Tc=25°C) — 214 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Total Gate Charge Q_G typ — [DATA_NEEDED: total gate charge]
R_thJC thermal resistance max — [DATA_NEEDED: R_thJC]
Level ng MSL — MSL 1 (per JEDEC J-STD-020)
Avalanche Energy Rated — Yes (single-pulse)
Delivery Form — Tape & Reel (T&R)

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