BSC076N06NS3GATMA1 vs BSZ900N20NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC076N06NS3GATMA1 sa pamamagitan ng Infineon at BSZ900N20NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
BSC076N06NS3GATMA1 ✓ NakahandaInfineon
BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3
BSZ900N20NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC076N06NS3GATMA1 | BSZ900N20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 3 (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at TC=25C | 50 A | — |
| On-Resistance RDS(on) max at VGS=10V | 7.6 mΩ | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.4 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 3.5 V | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 69 W | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8 (TDSON-8 FL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 (unlimited) | 1 (unlimited) |
| RoHS Compliance | Compliant | — |
| Wala sa Halogen | Yes (per Infineon product page) | — |
| Part Number | — | BSZ900N20NS3GATMA1 |
| Continuous Drain Current (ID, Tc=25C) | — | 15.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) | — | 90 mΩ |
| Typical RDS(on) @ VGS=10V | — | 77 mΩ |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Gate Threshold Voltage (VGS(th) typ) | — | 3.5 V |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (PD, Tc=25C) | — | 62.5 W |
| Temperature ng Junction na Operasyon | — | -55C to +150C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Tindminan RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| ESD Protection | — | Yes (integrated) |
| Avalanche Energy Rated | — | Yes (EAS) |