BSC076N06NS3GATMA1 vs BSZ900N20NS3GATMA1 比較

詳細並排比較 BSC076N06NS3GATMA1 由 Infineon 與 BSZ900N20NS3GATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon

BSC076N06NS3GATMA1 ✓ 啟用中
Infineon
BSZ900N20NS3GATMA1 BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3

BSZ900N20NS3GATMA1 - 200V N-Ch MOSFET 15.2A | Infineon OptiMOS 3

BSZ900N20NS3GATMA1 ✓ 啟用中

規格比較

參數 BSC076N06NS3GATMA1 BSZ900N20NS3GATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 —
Technology N-Channel Trench MOSFET OptiMOS 3 (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 60 V 200 V
Continuous Drain Current (ID) at TC=25C 50 A —
On-Resistance RDS(on) max at VGS=10V 7.6 mΩ —
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 69 W —
工作溫度範圍 -55C to +150C —
封裝 PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TSDSON-8 (TDSON-8 FL)
安裝類型 Surface Mount Surface Mount
MSL 等級 1 (unlimited) 1 (unlimited)
RoHS Compliance Compliant —
無鹵素 Yes (per Infineon product page) —
Part Number — BSZ900N20NS3GATMA1
Continuous Drain Current (ID, Tc=25C) — 15.2 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) — 90 mΩ
Typical RDS(on) @ VGS=10V — 77 mΩ
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th) typ) — 3.5 V
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg]
Power Dissipation (PD, Tc=25C) — 62.5 W
工作接面溫度 — -55C to +150C
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
RoHS 狀態 — Compliant
Lead-Free / Halogen-Free — Yes / Yes
ESD Protection — Yes (integrated)
Avalanche Energy Rated — Yes (EAS)

資料表與資源

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