BSC077N12NS3GATMA1 vs BSC036NE7NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC077N12NS3GATMA1 sa pamamagitan ng Infineon at BSC036NE7NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ NakahandaInfineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC077N12NS3GATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Uri ng Transistor | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | 75 V |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | 400 A |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Temperature ng Junction na Operasyon | -55C to +150C | — |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-7 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Series | — | OptiMOS 3 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |