BSC0911NDATMA1 vs BSC360N15NS3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC0911NDATMA1 sa pamamagitan ng Infineon at BSC360N15NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC0911NDATMA1 BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC0911NDATMA1 BSC360N15NS3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) —
Drain-Source Voltage (VDS) 25 V 150 V
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A —
Power Dissipation (PD) 1 W —
Packhaging PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-1 (SuperSO8, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -55C to +150C (junction) —
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET OptiMOS 3 (N-Channel Trench MOSFET)
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL rating] 1
Part Number — BSC360N15NS3GATMA1
Continuous Drain Current (ID) at Tc — 33 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Power Dissipation (PD) at Tc — 74 W
Gate Threshold Voltage (VGS th) typ — 3.0 V
Total Gate Charge (Qg) typ — [DATA_NEEDED: Qg value]
Hanay ng Temperature na Operasyon — -55°C to +150°C (junction)
Avalanche Energy Rated — Yes
Lead-Free — Yes

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