BSC093N15NS5ATMA1 vs BSC016N06NSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC093N15NS5ATMA1 sa pamamagitan ng Infineon at BSC016N06NSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC016N06NSATMA1 BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 - 60V 100A 1.6mΩ OptiMOS 5 MOSFET | Infineon

BSC016N06NSATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC093N15NS5ATMA1 BSC016N06NSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 150V OptiMOS™ 5
FET Type N-Channel —
Drain-Source Voltage (VDS) Max 150 V —
Continuous Drain Current (ID) at TC 87 A —
Drain-Source On-Resistance (RDS(on)) Max at VGS=10V 9.3 mΩ —
Power Dissipation (PD) at TC 139 W —
Packhaging SuperSO8 5x6 (PG-TDSON-8-7) PG-TDSON-8 FL (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive Voltage (VGS) Recommended 10 V —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] -55 °C to +150 °C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] 71 nC
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] 1 (unlimited)
Wala sa Halogen [DATA_NEEDED: halogen free status] —
Product Series — OptiMOS™ 5 60V
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 100 A
Continuous Drain Current (ID, TA) — 30 A
On-Resistance RDS(on) max @ VGS=10V — 1.6 mΩ
Power Dissipation (TA) — 2.5 W
Power Dissipation (TC) — 139 W
Gate Drive (recommended) — 10 V

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