BSC093N15NS5ATMA1 vs BSC036NE7NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC093N15NS5ATMA1 sa pamamagitan ng Infineon at BSC036NE7NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 ✓ NakahandaInfineon
BSC036NE7NS3GATMA1 - 75V 100A N-Channel OptiMOS 3 MOSFET | Infineon
BSC036NE7NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC093N15NS5ATMA1 | BSC036NE7NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 5 150V | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) Max | 150 V | — |
| Continuous Drain Current (ID) at TC | 87 A | — |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | 9.3 mΩ | — |
| Power Dissipation (PD) at TC | 139 W | — |
| Packhaging | SuperSO8 5x6 (PG-TDSON-8-7) | PG-TDSON-8-7 (5x6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate Drive Voltage (VGS) Recommended | 10 V | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -55C to +175C |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | — |
| Tindminan RoHS | Compliant | ROHS3 Compliant |
| Level ng MSL | [DATA_NEEDED: MSL level] | 1 |
| Wala sa Halogen | [DATA_NEEDED: halogen free status] | — |
| Series | — | OptiMOS 3 |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Pulsed Drain Current (IDM) | — | 400 A |
| On-Resistance (RDS(on) max @ VGS=10V) | — | 3.6 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | 2.6 V |
| Total Gate Charge (Qg typ @ VGS=10V) | — | 45 nC |
| Rise Time (tr typ) | — | 13 ns |
| Fall Time (tf typ) | — | 11 ns |
| Power Dissipation (PD max, Tc=25C) | — | 156 W |
| Power Dissipation (Ta=25C) | — | 2.5 W |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 0.8 C/W |