BSC265N10LSFGATMA1 vs IAUC50N08S5L096ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC265N10LSFGATMA1 sa pamamagitan ng Infineon at IAUC50N08S5L096ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC265N10LSFGATMA1 IAUC50N08S5L096ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 100 V 80 V
Continuous Drain Current (ID, Tc) 40 A —
Continuous Drain Current (ID, Ta) 6.5 A —
Power Dissipation (PD, Tc) 78 W —
Technology OptiMOS 2 (TrenchFET) —
Packhaging PG-TDSON-8-1 (TDSON-8) PG-TDSON-8-33 (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) max at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) -55°C to +175°C
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Avalanche Rated Yes —
Series OptiMOS 2 —
Manufacturer — Infineon Technologies
Product Series — OptiMOS 5
Continuous Drain Current (ID) — 50 A (Tc)
Pulsed Drain Current (IDM) — 200 A
On-Resistance (RDS(on)) — 9.6 mΩ max @ VGS=10V, ID=25A
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Power Dissipation (PD) — 60 W (Tc)
Automotive Qualification — AEC-Q101

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