BSP88H6327XTSA1 vs BSP89H6327XTSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSP88H6327XTSA1 sa pamamagitan ng Infineon at BSP89H6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSP88H6327XTSA1 BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 - 240V N-Ch MOSFET 350mA SOT-223 | Infineon

BSP88H6327XTSA1 ✓ Nakahanda
Infineon
BSP89H6327XTSA1 BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 - 240V N-Ch SIPMOS MOSFET, 350mA | Infineon

BSP89H6327XTSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSP88H6327XTSA1 BSP89H6327XTSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET, enhancement mode
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 350 mA at Ta=25 C —
Power Dissipation (PD) 1.8 W at Ta=25 C —
Packhaging PG-SOT223-4 (SOT-223-3) PG-SOT223-4 (SOT-223, 4-pin with tab)
Uri ng Pagpapasok Surface Mount Surface Mount
On-State Resistance (RDS(on)) 6 ohm typical at VGS=10 V —
Configuration Single —
Temperature na Operasyon -55 C to +150 C —
Technology SIPMOS (planar enhancement mode) SIPMOS (planar power MOS)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] [DATA_NEEDED: typical VGS(th) value]
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per ordering code H6327)
Lead Plating Pb-free —
RoHS Compliance Compliant —
Level ng MSL [DATA_NEEDED: MSL level] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Drain Tab Connection SOT-223 tab is drain —
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (Tj)
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
Tindminan RoHS — Compliant

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