BSS816NWH6327XTSA1 vs BSS214NH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSS816NWH6327XTSA1 sa pamamagitan ng Infineon at BSS214NH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
BSS816NWH6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSS816NWH6327XTSA1 | BSS214NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| Uri ng Transistor | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C (junction) |
| Packhaging | SOT-323 (PG-SOT323), 3-pin | SOT-23 (PG-SOT23), 3 pins |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (Automotive) |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS 2 (planar N-channel) |
| ESD Protection | Yes (integrated, per Infineon datasheet) | Yes (gate ESD diode) |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 1.5 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Drain-Source On-Resistance (RDS(on) max) | — | 250 mOhm at VGS = 4.5 V |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-Source Voltage (VGS max) | — | ±12 V (recommended) |
| Lead Finish | — | Pb-free lead plating (matte tin) |
| Tindminan RoHS | — | Compliant |