BSZ024N04LS6ATMA1 vs IQD005N04NM6CGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ024N04LS6ATMA1 sa pamamagitan ng Infineon at IQD005N04NM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ024N04LS6ATMA1 BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 - 40V 24A OptiMOS 6 N-MOSFET | Infineon

BSZ024N04LS6ATMA1 ✓ Nakahanda
Infineon
IQD005N04NM6CGATMA1 IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 - 40V 0.5mΩ OptiMOS 6 MOSFET | Infineon

IQD005N04NM6CGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ024N04LS6ATMA1 IQD005N04NM6CGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology OptiMOS 6 (shielded-gate trench) OptiMOS 6 (trench FET)
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D, Ta) 24 A —
Continuous Drain Current (I_D, Tc) 40 A —
Pulsed Drain Current (I_DM) 130 A —
R_DS(on) Max @ V_GS=10V 2.4 mΩ —
R_DS(on) Max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at 4.5V] —
Gate Threshold Voltage (V_GS(th)) 2.3 V (typical) —
Total Gate Charge (Q_g) @ V_GS=10V 25 nC —
Input Capacitance (C_iss) 1.8 nF —
Output Capacitance (C_oss) 19 pF —
Power Dissipation (P_D, Ta) 2.5 W —
Power Dissipation (P_D, Tc) 75 W —
Temperature ng Junction na Operasyon -55°C to +175°C —
Packhaging PG-TSDSON-8-FL (3.3 mm x 3.3 mm) PG-TTFN-9-U02 (Source-Down 5x6 mm²)
Uri ng Pagpapasok Surface Mount, top-side drain pad Surface Mount
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
RDS(on) Typical — 0.5 mΩ
Continuous Drain Current (ID) at Ta — 58 A
Continuous Drain Current (ID) at Tc — 610 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed rating]
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 333 W
Hanay ng Temperature na Operasyon — -55 °C to +150 °C (TJ)
Bilang ng Pin — 9
Lead-Free — Yes
Source Configuration — Source-Down (bottom-side source for PCB heatsinking)

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