BSZ024N04LS6ATMA1 vs IQD005N04NM6CGATMA1 比較
詳細並排比較 BSZ024N04LS6ATMA1 由 Infineon 與 IQD005N04NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ024N04LS6ATMA1 | IQD005N04NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 6 (shielded-gate trench) | OptiMOS 6 (trench FET) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Ta) | 24 A | — |
| Continuous Drain Current (I_D, Tc) | 40 A | — |
| Pulsed Drain Current (I_DM) | 130 A | — |
| R_DS(on) Max @ V_GS=10V | 2.4 mΩ | — |
| R_DS(on) Max @ V_GS=4.5V | [DATA_NEEDED: R_DS(on) at 4.5V] | — |
| Gate Threshold Voltage (V_GS(th)) | 2.3 V (typical) | — |
| Total Gate Charge (Q_g) @ V_GS=10V | 25 nC | — |
| Input Capacitance (C_iss) | 1.8 nF | — |
| Output Capacitance (C_oss) | 19 pF | — |
| Power Dissipation (P_D, Ta) | 2.5 W | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 | PG-TSDSON-8-FL (3.3 mm x 3.3 mm) | PG-TTFN-9-U02 (Source-Down 5x6 mm²) |
| 安裝類型 | Surface Mount, top-side drain pad | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| RDS(on) Typical | — | 0.5 mΩ |
| Continuous Drain Current (ID) at Ta | — | 58 A |
| Continuous Drain Current (ID) at Tc | — | 610 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed rating] |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 333 W |
| 工作溫度範圍 | — | -55 °C to +150 °C (TJ) |
| 腳位數 | — | 9 |
| Lead-Free | — | Yes |
| Source Configuration | — | Source-Down (bottom-side source for PCB heatsinking) |