BSZ120P03NS3GATMA1 vs BSC050N04LSGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ120P03NS3GATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ120P03NS3GATMA1 - -30V P-Ch 12mOhm OptiMOS P3 MOSFET | Infineon
BSZ120P03NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ120P03NS3GATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (TA=25C) | -11 A | — |
| Continuous Drain Current (TC=25C) | -40 A | — |
| Power Dissipation (TA=25C) | 2.1 W | — |
| Power Dissipation (TC=25C) | 52 W | — |
| On-Resistance RDS(on) max @ VGS=-10V | 12 mOhm | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage VGS(th) typ | -1.7 V | — |
| Technology | OptiMOS P3 | OptiMOS 3 (trench MOSFET) |
| Packhaging | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55C to +150C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 1 | 1 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |